BYY 62 Search Results

Contextual Info: SK75GD126T =' U BT VIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT QI:9 =W U BT VI <I =W U @TY VI <I¥; SEMITOP 4 IGBT Module .5'( @BYY Q SS J =' U ZY VI [Z J @OY J ] BY Q =W U @BT VI @Y a' =' U BT VI b@ J =' U ZY VI [S J @TY

IBGT

Abstract: byy 62 hb baz tbaz 3307
Contextual Info: 42*+|+{42*+|+. 293z6.7: /98=;9661; 2DAPQNDO u McXV\T_ \agXZeTgX V\eVh\g. ZbbW cXeYbe`TaVX u McXV\T_ [\Z[/cXeYbe`TaVX VbagTVgf. h_geT/_baZ X_XVge\VT_ XaWheTaVX u MheYTVX `bhag\aZ gXV[ab_bZk. TWiTaVXW VeTYgjbe^ u Mb_\W UTfX WXf\Za. fgTU_X fgehVgheX =SLGBAH .LLHGBAPGKJO

D405N

Abstract: AEG T 51 N 1200 AEG D 251 N 1200 D24NR d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200
Contextual Info: 1 7E D • GDSTMSb G 0 D 1 3 2 T ö ■ T - O l- O l Leistungsdioden Power diodes Diodes de puissance Typ Ifrmsm Vrrm Type V' A Ifsm t-10nns M= Wjmax 45°C t-10nns M“ Wjmax 45°C kA kA A s A*s Ifavm/*c IpAVM A/°C tA=45*C 120°el. rec. A V TO tA =35aC

Contextual Info: FHL@?M * <K8C , O@;< 0 <D @: FE;L: KFI$ @<C; # =<: K1I8EJ@JKFI !FFC* , 0 !    3 !FFC* , 0 X ! - FN<I1I8EJ@JKFI '- 4   /    ! " 8K8 0 ?<<K / <M           $ @E8C 'E;LJKI@8C  * LCK@D 8IB<K  +  <<9 # % F   & < C2> >.;?6?@< >

Contextual Info: FHL@?M *<K8C฀,O@;<฀0<D@:FE;L:KFI฀$@<C;฀#=<:K฀1I8EJ@JKFI ! FFC * , 0 ฀ !  3฀!FFC*,0X฀!฀-FN<I฀1I8EJ@JKFI '-4/!฀ " 8K 8฀ 0 ?<<K /<M ฀  ฀   $@E8C฀ ' E;LJ K I@ 8C ฀ ฀ * LC K @ D 8IB <K  +฀<<9#% F฀฀&<C2>฀ >.;?6?@<>

Contextual Info: GHL@?M + <K8C , O@;< 0 <D @: FE;L: KFI$ @<C; # =<: K1I8EJ@JKFI !FFC+ , 0 !    3 !FFC+ , 0 X ! - FN<I1I8EJ@JKFI '- "  /   ! " 8K8 0 ?<<K / <M           $ @E8C 'E;LJKI@8C  + LCK@D 8IB<K  +  <<9 # % F   & < C2> )>.;?6?@< > (

Contextual Info: GHL@?M + <K8C , O@;< 0 <D @: FE;L: KFI$ @<C; # =<: K1I8EJ@JKFI !FFC+ , 0 !    3 !FFC+ , 0 X ! - FN<I1I8EJ@JKFI '- "  /   ! " 8K8 0 ?<<K / <M           $ @E8C 'E;LJKI@8C  + LCK@D 8IB<K  +  <<9 # % F   & < C2> )>.;?6?@< > (

Contextual Info: FHL@?M *<K8C฀,O@;<฀0<D@:FE;L:KFI฀$@<C;฀#=<:K฀1I8EJ@JKFI ! FFC * , 0 ฀ !  3฀!FFC*,0X฀!฀-FN<I฀1I8EJ@JKFI '-4/!฀ " 8K 8฀ 0 ?<<K /<M ฀  ฀   $@E8C฀ ' E;LJ K I@ 8C ฀ ฀ * LC K @ D 8IB <K  +฀<<9#% F฀฀&<C2>฀ >.;?6?@<>

Contextual Info: GHL@?M +<K8C฀,O@;<฀0<D@:FE;L:KFI฀$@<C;฀#=<:K฀1I8EJ@JKFI ! FFC + , 0 ฀ !  3฀!FFC+,0X฀!฀-FN<I฀1I8EJ@JKFI '-"/ !฀ " 8K 8฀ 0 ?<<K /<M ฀  ฀   $@E8C฀ ' E;LJ K I@ 8C ฀ ฀ + LC K @ D 8IB <K  +฀<<9#% F฀฀&<C2>฀)>.;?6?@<>

Contextual Info: FHL@?M * <K8C , O@;< 0 <D @: FE;L: KFI$ @<C; # =<: K1I8EJ@JKFI !FFC* , 0 !    3 !FFC* , 0 X ! - FN<I1I8EJ@JKFI '- 4   /    ! " 8K8 0 ?<<K / <M           $ @E8C 'E;LJKI@8C  * LCK@D 8IB<K  +  <<9 # % F   & < C2> >.;?6?@< >

Contextual Info: GHL@?M +<K8C฀,O@;<฀0<D@:FE;L:KFI฀$@<C;฀#=<:K฀1I8EJ@JKFI ! FFC + , 0 ฀ !  3฀!FFC+,0X฀!฀-FN<I฀1I8EJ@JKFI '-"/ !฀ " 8K 8฀ 0 ?<<K /<M ฀  ฀   $@E8C฀ ' E;LJ K I@ 8C ฀ ฀ + LC K @ D 8IB <K  +฀<<9#% F฀฀&<C2>฀)>.;?6?@<>

Contextual Info: GHL@?M + <K8C , O@;< 0 <D @: FE;L: KFI$ @<C; # =<: K1I8EJ@JKFI !FFC+ , 0 !    3 !FFC+ , 0 X ! - FN<I1I8EJ@JKFI '- "  /   ! " 8K8 0 ?<<K / <M           $ @E8C 'E;LJKI@8C  + LCK@D 8IB<K  +  <<9 # % F   & < C2> )>.;?6?@< > (

ipw60r070c6

Contextual Info: FHL@?M * <K8C , O@;< 0 <D @: FE;L: KFI$ @<C; # =<: K1I8EJ@JKFI !FFC* , 0 !    3 !FFC* , 0 X ! - FN<I1I8EJ@JKFI '- 4   /    ! " 8K8 0 ?<<K / <M           $ @E8C 'E;LJKI@8C  * LCK@D 8IB<K  +  <<9 # % F   & < C2> >.;?6?@< >

Contextual Info: GHL@?M +<K8C฀,O@;<฀0<D@:FE;L:KFI฀$@<C;฀#=<:K฀1I8EJ@JKFI ! FFC + , 0 ฀ !  3฀!FFC+,0X฀!฀-FN<I฀1I8EJ@JKFI '-"/ !฀ " 8K 8฀ 0 ?<<K /<M ฀  ฀   $@E8C฀ ' E;LJ K I@ 8C ฀ ฀ + LC K @ D 8IB <K  +฀<<9#% F฀฀&<C2>฀)>.;?6?@<>

byy 88

Contextual Info: GIM@?N + <K8C - O@;< 1 <D @: FE;L: KFI$ @<C; # =<: K2I8EJ@JKFI !FFC+ - 1 #     3 !FFC+ - 1 X #  . FN <I2I8EJ@JKFI '. O  0    #  " 8K8 1 ?<<K 0 <M           $ @E8C 'E;LJKI@8C  + LCK@D 8IB<K   +  < < 9# % F   & < C2> >.;?6?@< >

Contextual Info: GIM@?N + <K8C - O@;< 1 <D @: FE;L: KFI$ @<C; # =<: K2I8EJ@JKFI !FFC+ - 1 #     3 !FFC+ - 1 X #  . FN <I2I8EJ@JKFI '. O  0    #  " 8K8 1 ?<<K 0 <M           $ @E8C 'E;LJKI@8C  + LCK@D 8IB<K   +  < < 9# % F   & < C2> >.;?6?@< >

Contextual Info: GIM@?N +<K8C฀-O@;<฀1<D@:FE;L:KFI฀$@<C;฀#=<:K฀2I8EJ@JKFI ! FFC +- 1 ฀ #  3฀!FFC+-1X฀#฀.FN<I฀2I8EJ@JKFI '.O0#฀ " 8K 8฀ 1 ?<<K 0<M ฀  ฀   $@E8C฀ ' E;LJ K I@ 8C ฀ ฀ + LC K @ D 8IB <K  +฀<<9#% F฀฀&<C2>฀ >.;?6?@<>

RTM 866 - 480

Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
Contextual Info: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

Contextual Info: SK 50 DGDL 126 T CONVERTER, INVERTER, BRAKE =' T BR XIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions Values Units IGBT - Inverter. For IGBT chopper maximum ratings, please refer to SK35DGDL126T PI:9 <I <I^; PG:9 =' T BR [¥Y] XI <I^;T B F <I%,+A .5 T @ +'

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

Contextual Info: FDB2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Fairchild Semiconductor DS-513

Contextual Info: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: FQB9P25 P-Channel QFET MOSFET -250 V, -9.4 A, 620 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state