BYW55 BYW56 Search Results

SOD-57

Abstract: BYW55 BYW52 200
Contextual Info: BYW52, BYW53, BYW54, BYW55, BYW56 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading

BYW55

Abstract: byw55 byw56 BYW52 200
Contextual Info: BYW52, BYW53, BYW54, BYW55, BYW56 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading

BYW52 200

Contextual Info: BYW52, BYW53, BYW54, BYW55, BYW56 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading

Contextual Info: BYW52, BYW53, BYW54, BYW55, BYW56 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading

Contextual Info: BYW52, BYW53, BYW54, BYW55, BYW56 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading

BYW56

Abstract: byw56t
Contextual Info: BYW52, BYW53, BYW54, BYW55, BYW56 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading

BYW56

Abstract: diode cross reference BYW56 byw54 BYW56 v BYW55 PHILIPS BYW54 BYW56AMO
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYW54 to BYW56 Controlled avalanche rectifiers Product specification Supersedes data of 1996 Jun 11 1996 Oct 03 Philips Semiconductors Product specification Controlled avalanche rectifiers BYW54 to BYW56

BYW56

Abstract: BYW54 BYW55 MBG044 PHILIPS BYW54
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYW54 to BYW56 Controlled avalanche rectifiers Product specification Supersedes data of 1996 Jun 11 File under Discrete Semiconductors, SC01 1996 Oct 03 Philips Semiconductors Product specification

BYW56 v

Abstract: BYW56 energy absorption of diode MBG044 BYW55 BYW54 byw55v
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYW54 to BYW56 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 11 Philips Semiconductors Product specification

BYW54V

Abstract: BYW56 BYW54 BYW55 ir650 MBG044
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYW54 to BYW56 Controlled avalanche rectifiers Product specification Supersedes data of 1996 Jun 11 1996 Oct 03 Philips Semiconductors Product specification Controlled avalanche rectifiers BYW54 to BYW56

1n5062 equivalent

Abstract: BYW54 equivalent BYW55 equivalent 1N5062 telefunken ha 800
Contextual Info: Temic BYW52.BYW56 S e m i c o n d u c t o r s Silicon Mesa Rectifiers Features • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

BYW56

Contextual Info: BYW54 THRU BYW56 Glass Passivated Rectifier DO204AP Reverse Voltage 600 to 1000 V * Forward Current 2.0 A d e t n e t a Features P 0.034 0.86 0.028 (0.71) DIA. • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction

1N5625 PIV

Abstract: 1N5060 BYW55 1N4248 1n5062 1N5061 1N5059 1N5625 byw55 byw56 1N4245
Contextual Info: Sinterglass Rectifiers Part No. 1N4245 1N4246 1N4247 1N4248 1N4249 1N5059 1N5060 1N5061 1N5062 1N5614 1N5616 1N5618 1N5620 1N5622 G1A G1B G1D G1G G1J G1K G1M BYT41A BYT41B BYT41D BYT41G BYT41J BYT41K BYT41M BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M

Contextual Info: BYW52.BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 – 1N5059

bvy27-200

Abstract: BY228 equivalent ERD29-08 ERC06-15s ERC05-10b BYD14J RGP15J equivalent BYD14G ERD28-06S BVY28-200
Contextual Info: VISHAY Vishay Semiconductors Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Semiconductors devices and those of other manufacturers. Code Definitions 1 = equivalent 2 = minor electrical difference

BYW56

Abstract: BYW52 200 byw52 BYW53 BYW54 BYW55
Contextual Info: BYW52 to BYW56 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode \ Features • • • • • Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications

1n5062 equivalent

Abstract: 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55 BYW56
Contextual Info: BYW52.BYW56 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060

1n5062 equivalent

Abstract: 1N5059 diode 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55
Contextual Info: BYW52.BYW56 Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060

BYW56

Abstract: BYW56 v PHILIPS BYW54 BYW54
Contextual Info: Short-form product specification Philips Semiconductors Controlled avalanche rectifier diodes BYW54 to 56 QUICK REFERENCE DATA FEATURES • Capability of absorbing reverse transients. SYMBOL V rwm • General purpose applications in telephony equipment. V

BYW56

Abstract: BYW56 v BYW52 VRRM1000V BYW55 BYW52 200
Contextual Info: BYW52 to BYW56 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications

BYW55

Contextual Info: BYW54 thru BYW56 Vishay Semiconductors formerly General Semiconductor Glass Passivated Rectifiers * d e t n e t Pa Features DO-204AP • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction • Hermetically sealed package

Contextual Info: BYW54 - BYW56 AVALANCHE RECTIFIER DIODES D2 PRV : 600 - 1000Volts Io : 2.0 Amperes * * * * * 1.00 25.4 MIN. 0.161 (4.1) 0.154 (3.9) FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

BYW56

Abstract: BYW56 v BYW54 BYW55
Contextual Info: BYW54 - BYW56 AVALANCHE RECTIFIER DIODES D2 PRV : 600 - 1000Volts Io : 2.0 Amperes * * * * * * 1.00 25.4 MIN. 0.161 (4.1) 0.154 (3.9) FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop