BYV 45 Search Results

Diode BYV 95

Abstract: byv 16 BYV 08
Contextual Info: BYV12, BYV 13, BYV 14, BYV 15, BYV 16 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Lead Pb -free component • Compliant to RoHS directive 2002/95/EC and in

BYV 200

Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYV32

Abstract: BYV32-100 BYVF32 JESD22-B102D J-STD-002B
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYV32

Abstract: BYVF32 JESD22-B102D J-STD-002B
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYVB32-200-E3

Abstract: BYV32 BYVF32 JESD22-B102D J-STD-002B Diode BYV 95
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYV32-200E

Abstract: Diode BYV 95
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYV32

Abstract: BYVF32 JESD22-B102 J-STD-002 BYV 35 C BYV 35
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYV32-150

Abstract: byv 20 BYV32100
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYV32-200E

Abstract: BYV32 BYVF32 JESD22-B102 J-STD-002 byv325
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

TMM BAT 48

Abstract: melf Schottky Byv 10-40 tm BYV 30 45 BAT 49
Contextual Info: r=7 SURFACE MOUNT DEVICES ^ 7# SGS-THOMSON IlO ÎÂ ilL iÊ ÎIiM ilÊ i GENERAL PURPOSE & INDUSTRIAL MINIMELF I MELF MINIMELF MELF SCHOTTKY DIODES Type VRRM 'F V •o* (mA) UHF and ultra fast switching TMM TMM TMM TMM BAR 19 BAT 29 BAT 19 BAT 45 |R (1)

BY407A

Abstract: BYV 88 800 BYV88-200 BY406A Scans-00109689 BY407 BYV88-600 MC44 NS100-MA CB-210
Contextual Info: fast recovery rectifier diodes diodes de redressement rapide Types •o V ■fsm r r n i < Vf / 10 ms 100 A < If ■r / V max A (V I 100 mA / Tamb = 25°C PR 05 PR 11 PR 21 PR 31 PR 41 400 mA / Tamb = 25°C MC MC MC MC MC 22 42 43 44 45 400 mA / Tamb = 25°C

BYY 56

Abstract: BYV 200 BYV 30 45 BYW 200 DDD1355 BYV 100 5BFL
Contextual Info: EUPEC Epitaxial rectifier diodes Type Vrrm I favm tA = 25°C V A blE » • 34032T7 D0CU352 5bfl « U P E C Ifsm VF Ir 10 ms, tvj max ¡f = Ifavm tvj = 25°C VR = VrrM tvj — tvj max A V trr tvj max mA ns °c Outline BYR 29-800 800 8 60 < 1,75 < 0 ,2 <75

v26ev

Abstract: BYV26 byv26 500 V26C BYv26 200 BYV 200 YV26C
Contextual Info: Te m ic BYV26 TELEFUNKEN Semiconductors Very Fast Soft-Recovery Avalanche Rectifier Features • Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage Applications Switched mode power supplies

byv ultra Fast Recovery Rectifier

Abstract: byv 27 ST 9527
Contextual Info: Te m ic BYV27/. TELEFUNKEN Semiconductors Ultra Fast Silicon Mesa Rectifiers Features • Controlled avalanche characteristic • L ow forward voltage • Ultra fast recovery time • G lass passivated junction • H erm etically sealed package Applications

TR-R25

Abstract: BYV32 BYV 35 C
Contextual Info: BYV32 Series Dual Ultra Fast Rectifiers TO-220AB PRV : 50 - 200 Volts Io : 18 Ampere 0.154 3.91 DIA. 0.148(3.74) 0.055(1.39) 0.045(1.14) 0.113(2.87) 0.103(2.62) FEATURES : * * * * * * 0.415(10.54)MAX. Glass passivated chip junction High current capability

BYV 200v

Contextual Info: BYV26A thru BYV26G Pb BYV26A thru BYV26G Pb Free Plating Product 1.0 AMP.ULTRA FAST RECOVERY RECTIFIERS SOD-57 Features D D D D D Unit: inch mm Glass passivated junction Hermetically sealed package Very low switching losses Low reverse current High reverse voltage

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

byv ultra Fast Recovery Rectifier

Abstract: BYV 30 45 BYV 200 BYV27
Contextual Info: BYV27/. TELEFUNKEN Semiconductors Ultra Fast Silicon Mesa Rectifiers Features D Controlled avalanche characteristic D Low forward voltage D Ultra fast recovery time D Glass passivated junction D Hermetically sealed package Applications 94 9539 Very fast rectifier e.g. for switch mode

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

BAT 127

Abstract: A502GE A503GE byv 20 BYV 35 CB-127
Contextual Info: silicon signal diodes O diodes de signal au silicium Type VRRM V |R ! V r max WA) (V) 'F 'O* ImA) schottky diodes BAR BAT BAR BAT THOMSON'CSF vf max (V) / if ImA) C / max (pF) Dynamic parameter« Vr IV) Tamlb = 25°C diodes sch ottky 19 29 35 19 4 5 5 10

Contextual Info: C BYV12.BYV16 TELEFUNKEN Semiconductors Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Soft recovery characteristic • L ow reverse current Applications Fast rectifier and sw itch for exam ple for T V -lin e

CX 879

Contextual Info: 879 @O?F@ FI@E 9 CJLH @ EBLHBNF@>GGR MB>GBA G>N@EFID LBG>R EC<;8: CVS`a^V_ 3 EehY[ XWbWdY[Z bWjY^_d] h[bWo 3 54@ YedjWYji im_jY^_d] YWfWX_b_jo 3 EW_bkh[ hWj[ YWd X[ J b[l[b 3 G_]^ WcX_[dj Wffb_YWX_b_jo 3 @bb c[jWb m[bZ[Z YedijhkYj_ed 3 G[hc[j_YWbbo m[bZ[Z WdZ cWha[Z Xo bWi[h

TRANSISTOR 58050

Abstract: 3 pin TRANSISTOR 58050 58050 3 pin transistor 58050 transistor byv 32 diode BYV 88 800 ByV schottky L4985 L4985D SO20
Contextual Info: L4985 HIGH EFFICIENCY SWITCHING REGULATOR PRODUCT PREVIEW OPERATING INPUT VOLTAGE: FROM 4.5V TO 21V HIGHEFFICIENCY 3A STEP DOWN CONVERTER 3A @ 3.3V OUTPUT VOLTAGE FROM 4.5V INPUT VOLTAGE ADJUSTABLE OUTPUT VOLTAGE FROM 1.28V GATE DRIVER FOR SYNCHRONOUS RECTIFICATION