BY 228 V Search Results

byw32-200

Abstract: BY228-1500 BYV 200 byt 77 byv 25-200 BYV13 BYV14 BYV16 BYW32 BYW33
Contextual Info: TELEFUNKEN ELECTRONIC ñ lC J> • ñc!5D0tlb OOQSb^ B MAU6G 'T-O f^ O f Sinterglass Rectifiers Fast Rectifiers-Soft recovery—in Sinterglass package: ^ R _ 2 5 ns tt>*550 ns Type Electrical characteristics Vr W VRRM V A BY 203/12 S /16S /20S BY 228 BY 228/13 S

by 228 v

Abstract: by228 AEG 972 ir 0588
Contextual Info: A E e CORP 17E D 0Q2T42fe> Q [ ] C H 7 f a 7 T • BY 228/13 •BY 228/15 ¥ 1 ÌL1 P0J IK1K 1 K1electronic Creative Technologies T-Ol-iS' Silicon Mesa Diodes Application: High voltage rectifier Features: • G lass passivated junction Hermetically sealed package

E73571

Abstract: ac 00
Contextual Info: REV .22 X .13 DP 6 PLCS .30 TYP 6 PLCS f— DATE DESCRIPTION ECO 00 3/94 cx BY RELEASED r .41 TYP 6 PLCS WIRE RANGE & TORQUE IN-LBS U/L CSA ' SECONDARY PRIMARY TORQUE RANGE RANGE TORQUE FILE U GU ID E U REPORT U 228 LR 69363 228 3/8" STUD 66203 3/8" STUD

Xenon 175

Abstract: SFP LVDS altera PC680 PM5392 STM-64 SFP PM3388 PM3392 PM5390 hmzd connector SFP altera
Contextual Info: SPI-4.2 Interoperability with PMC-Sierra XENON Family in Stratix GX Devices May 2003, ver. 1.0 Introduction Application Note 228 The system packet interface level 4–phase 2 SPI-4.2 specification, defined by the Optical Internetworking Forum (OIF), is fast becoming the most

B78304-A1477-A3

Abstract: CTX02 coiltronics CTX02 CTX02-14659 BAT54C LT1761 LT1761-5 LTC1535 LTC2402 dn228
Contextual Info: advertisement Isolated RS485 Transceiver Breaks Ground Loops – Design Note 228 Mitchell Lee Previously, isolation was achieved by using at least three optoisolators and a separate isolated power supply. The LTC1535 replaces not only the optoisolators, but also the

Contextual Info: CYT5551D Central TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5551D type consists of two 2 isolated NPN silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial

CYT5551D

Contextual Info: CYT5551D Central TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5551D type consists of two 2 isolated NPN silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial

D1111

Abstract: UC21 AD845 A0586 D117 AD7884 ADSP-2101 AN-228 DSP56000 MC68000
Contextual Info: ANALOG ► DEVICES AN-228 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Evaluation Board for the AD788416-Bit A/D Converter by Mika Curtin INTRODUCTION This application note describes the evaluation board for

EIA-364-56A

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. 9.60 [.378] 3.10 [.122 ] f D 4.50 [.177] 5.80 [.228] 10.10 [.398] 2.69 TRAVEL 3.00 118 TYP 3.00 [.1 1 8 ] [. C ] S 3.00 _ [.11 8 ]—*-l

multiplexer 74HC574

Abstract: grid tie inverters circuit diagrams AD586 AD7884 AD845 ADSP-2101 AN-228 DSP56000 MC68000 TMS320C25
Contextual Info: ANALOG ► DEVICES AN-228 APPLICATION NOTE ONE TECHNO LO GY WAY • P.O. BOX 9106 • NORWOOD, M ASSACHUSETTS 02062-9106 • 617/329-4700 Evaluation Board for the AD788416-Bit A/D Converter by Mike Curtin INTRODUCTION This application note describes the evaluation board for

two cavity resonator

Contextual Info: V246A IK Velocity Modulated Oscillator V246A/IK CV.228 The V246A/IK is a velocity modulated oscillator of the coaxial line type for pulsed or C W operation over the band 6 to 7 cm. The low voltage operation is made possible by the use of a magnetic field to focus the electron stream through the resonator system of

ADS20

Abstract: ADS20404
Contextual Info: 0.08 M C THIS DRAWING CONTAINS CONFIDENTIAL INFORMATION PROPRIETARY TO SEC IT MUST NOT BE REPRODUCED OR DISCLOSED TO OTHERS OR USED IN ANY OTHER WAY IN WHOLE OR PART EXCEPT AS AUTHORIZED IN WRITING BY SEC 0.10 C 2X 8.00 A REV. DATE 000 2005.10.07 ECN# 228 - Ø 0.30±0.05

Contextual Info: TH IS DRAWING IS U N P U B L IS H E D . RELEASED FOR A LL COPYRIGHT PU B LIC ATIO N RIG HTS - ,- R E S ER V ED . BY TYCO ELECTRONICS CORPORATION. 69.4 CLINCH NUT 4 —40UN Cx3.0 2 PLC [.469] A ^ V ^ VJ 5.8 [.228] ^ -J ✓ — y ♦ 14.90 + 0.38 [.587 + .015]

Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE BY A 2006 INITIAL RELEASE 9/17/09 JH F F 5.08±0.10 .200±.004 2.54±0.10 .100±.004 Circuit 1 E E 1.02±0.05 .040±.002 P.C.B LAYOUT 2.54±0.10 .100±.004 5.08±0.20 .200±.008 5.80±0.25 .228±.010

Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE BY A 2006 INITIAL RELEASE 9/17/09 JH F F 7.62±0.10 .300±.004 Circuit 1 2.54±0.10 .100±.004 E E 1.02±0.05 .040±.002 P.C.B LAYOUT 2.54±0.10 .100±.004 7.62±0.20 .300±.008 D D 5.80±0.25 .228±.010

Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE BY A 2006 INITIAL RELEASE 9/17/09 JH F F 5.08±0.10 .200±.004 Circuit 1 2.54±0.10 .100±.004 E E 1.02±0.05 .040±.002 P.C.B LAYOUT 2.54±0.10 .100±.004 5.80±0.25 .228±.010 5.08±0.20 .200±.008

Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE BY A 2006 INITIAL RELEASE 9/16/09 JH F F A±0.10[.004] Circuit 1 E E 2.54±0.10 .100±.004 1.20±0.05 .047±.002 P.C.B LAYOUT 2.54±0.10 .100±.004 D D A±0.20 .008 5.80±0.25 .228±.010 B±0.25 .010

EIA-364-52

Abstract: A1 RJU
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT ~ 6 5 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. By - D 3.4 [.134] 3.0 [.1 18] A 8.3 [.327] A C 0.5 [.020] 2.9 [.114] 0.4 [.016] TYP 14.0 [.551] 3ZZT 5.8 [.228] i_ "IZZE □ □ □ i— r 2 3 B 3 PLC RE C O M M EN D ED

Contextual Info: CYT3019D SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT3019D type consists of two 2 isolated NPN silicon transistors packaged in an epoxy molded SOT-228 surface mount case. This SUPERmini device is manufactured by

Contextual Info: CYT4033D SURFACE MOUNT DUAL, ISOLATED PNP SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT4033D type consists of two 2 isolated PNP silicon transistors packaged in an epoxy molded SOT-228 surface mount case. This SUPERmini device is manufactured by

Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE BY A 2237 INITIAL RELEASE 05/23/2011 LH F F A B E 2.54 .100 E 1.00 .039 5.80 .228 RECOMMENDED PCB LAYOUT 06 - 20 POSITIONS 02 - 05 POSITIONS D D 11.40 .449 14.20 .559 3.20 .126 C C 3.40 .134 0.64 .025

Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE BY A 2006 INITIAL RELEASE 9/17/09 JH F F 7.62±0.10 .300±.004 2.54±0.10 .100±.004 E E 2.16±0.05 .09±.00 Circuit 1 1.20±0.05 .047±.002 1.02±0.05 .040±.002 D 2.54±0.10 .100±.004 5.80±0.25 .228±.010

TEA5580

Abstract: rr100
Contextual Info: JV TEA5580 PLL STEREO DECODER G E N ER AL DESCRIPTION The TEA5580 PLL stereo decoder is fo r car, portable and mains-fed medium-fi radios and radio recorders. It features a 228 kHz voltage-controlled oscillator VCO th a t is locked to the 19 kHz stereo p ilo t tone by a phase-locked loop (PLL) system. Subcarrier frequencies o f 19, 38, 57 and 114 kHz are

sullins

Abstract: 102F geometric 420SE0
Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE BY E 1 REDRAWN IN SOLIDWORKS 4/29/03 HS F 468 12/3/2004 JFW F F .232 .228 25.0°±5.0° CHANGED 25 1 TO 25 5 F E E CAVITY ID .200 D D C C .074 .034 .030 FULL R .105 .101 B B .009 .016 .012 UNLESS OTHERWISE SPECIFIED: