BY 178 DIODE Search Results

ESD0P2RF-02LRH

Abstract: PCB on-chip ESD discharge protection connector s22 varistor AN103 AN140 AN167 BFP740F ESD0P2RF-02LS JESD22-A114D copper bond wire infineon
Contextual Info: Application Note, Rev. 1.0, Dec. 2008 Application Note No. 178 ESD Protection for RF Antennas using Infineon ESD0P4RFL and ESD0P2RF Small Signal Discretes Edition 2008-12-05 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.

Contextual Info: R2062 SERIES 3 wire interface Real-Time Clock ICs with Battery Backup switch-over Function NO.EA-178-130814 OUTLINE The R2062 is a CMOS real-time clock IC connected to the CPU by three signal lines, CE, SCLK, and SIO, and configured to perform serial transmission of time and calendar data to the CPU. Further, battery backup

ML614

Abstract: R2062 R2062K01-E2 R2062K02-E2 SSOP16
Contextual Info: R2062 SERIES 3 wire interface Real-Time Clock ICs with Battery Backup switch-over Function NO.EA-178-070910 OUTLINE The R2062 is a CMOS real-time clock IC connected to the CPU by three signal lines, CE, SCLK, and SIO, and configured to perform serial transmission of time and calendar data to the CPU. Further, battery backup

ML614

Abstract: R2062 R2062K01-E2 R2062K02-E2 SSOP16
Contextual Info: R2062 SERIES 3 wire interface Real-Time Clock ICs with Battery Backup switch-over Function NO.EA-178-080118 OUTLINE The R2062 is a CMOS real-time clock IC connected to the CPU by three signal lines, CE, SCLK, and SIO, and configured to perform serial transmission of time and calendar data to the CPU. Further, battery backup

LDC20B030

Abstract: LDC20B murata ldb20 ldb20 ldb25 balun
Contextual Info: MONOLITHIC DEVICES m itfìa fn SOLDERING CONDITIONS FOR: LC CHIP FILTERS, DIRECTIONAL T2EKK2 COUPLERS/90° HYBRIDS, DELAY LINES, CHIP BALUN AND RF DIODE SWITCH I Soldering must be carried out by reflow soldering. Please contact Murata Electronics concerning other soldering

LDC30B030GC0850

Contextual Info: MONOLITHIC DEVICES SOLDERING CONDITIONS FOR: LC CHIP FILTERS, DIRECTIONAL COUPLERS/900 HYBRIDS, DELAY LINES, CHIP BALUN AND RF DIODE SWITCH I Soldering must be carried out by reflow soldering. Please contact Murata Electronics concerning other soldering before use.

free transistor equivalent book

Abstract: marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE
Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. For the most current Tape & Reel information, please download BRD8011/D

EIA-468 label location

Abstract: W1 sot 363 MPS3904RLRA free transistor equivalent book MARKING W2 SOT23 sot353 transistor MARKING CODE LAYOUT G SOT89 marking W2 sot363
Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the

SOD223

Abstract: SOD-223
Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching diodes LM1MA151WAT1G LM1MA152WAT1G These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low

1N5628

Abstract: 12115X marking AB SOD123 1N5828
Contextual Info: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

1N5831

Abstract: E5 sot223 1N5829
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5829 1N5830 1N5831 Designer's Data Sheet Switchm ode Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

str 50113

Abstract: BZX79-C6 c5v1 BZX79C6V2 philips BZX79-C27AMO C4V7 ST SOD27 BZX79-C bzx79-c philips BZX79C9V1AMO
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX79 series Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 25 Philips Semiconductors Product specification Voltage regulator diodes BZX79 series FEATURES DESCRIPTION • Total power dissipation:

diode sy 164 dl

Abstract: diode sy 164 02N2222 b6045
Contextual Info: MOTOROLA MBR6035 MBR6045 • SEMICONDUCTOR TECHNICAL DATA Switchm ode Power Rectifiers MBR6045 Is a Motorola Preferred Device . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.

marking H2A sot-23

Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the

9351

Abstract: diode ring mixer 9351 equivalent HSCH-9301 HSCH-9351 HSCH9351 HP 9301 SONY+msl+9351
Contextual Info: Agilent HSCH-9301/HSCH-9351 GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Data Sheet HSCH-9301 Junction Side up 125 (4.9) 115 (4.1) 183 (7.2) 178 (7.0) 756 (29.8) 746 (29.4) 390 (15.4) 310 (12.2) Features 125 (4.9) 105 (4.1) L = 0.1 nH 346 (13.6)

Contextual Info: SKiiP 26NAB066V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper ',  4 ' ,-  * #% +$        * #% 12/3 +  * #% 12/3 +$  5 "  7 Values Units .// 6 #/ '   ' 8 9/ : ; "%/ + Diode - Inverter, Chopper

Contextual Info: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode LRB500V-40T1G zApplications Low current rectification 1 zFeatures 1 Small surface mounting type. 2) Low IR. IR=70nA Typ.) 3) High reliability. 4) Pb-Free package is available. 2 SOD-323 zConstruction

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)

SOT 363 marking CODE 039

Abstract: LRB520S-30T1 LRB520S-30T3 marking code 4 SC-79 SOT-353 marking code b1
Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB520S-30T1 zApplications Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 Low IR.(IR=0.1mA Typ.) High reliability. 2 Pb-Free package is available.

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)

Contextual Info: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications L1SS356T1G High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 3) Pb-Free Package is Available. z Construction Silicon epitaxial planar 2 1 CATHODE SOD– 323

Contextual Info: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode z Applications LRB501V-40T1G Low current rectification z Features 1 1 Small surface mounting type. 2) High reliability. 3) Pb-Free package is available. 2 z Construction SOD-323 Silicon epitaxial planar

Contextual Info: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277T1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 z Pb-Free package is available SOD–523 Device Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB551V-30T1GG LRB551V-30T1G 1 zApplications High-frequency rectification Switching regulators 2 zFeatures 1 Small surface mounting type. CASE 477– 02, STYLE 1 SOD– 323 2) Ultra low VF VF=0.45V Typ. at 0.5A)