BWD TRAN Search Results

Contextual Info: COTS PEM AS5SP256K36DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0

CY7C1380B

Abstract: CY7C1382 CY7C1382B
Contextual Info: 380B CY7C1380B CY7C1382B PRELIMINARY 512K x 36 / 1M x 18 Pipelined SRAM Features inputs, address-pipelining Chip Enable CE , burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd and BWE), and Global Write (GW). • • • • •

CY7C1386B-133AC

Abstract: CY7C1386B CY7C1386B-200AC CY7C1387B
Contextual Info: 1CY7C1386B CY7C1386B CY7C1387B PRELIMINARY 512K x 36 / 1 Mb x 18 Pipelined DCD SRAM Features inputs, address-pipelining Chip Enable CE , burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd and BWE), and Global Write (GW). • •

CY7C1441V33

Abstract: CY7C1443V33
Contextual Info: CY7C1441V33 CY7C1443V33 CY7C1447V33 PRELIMINARY 1M x 36/2M x 18/512K x 72 Flow-Thru SRAM Features inputs include all addresses, all data inputs, addresspipelining Chip Enable CE , Burst Control Inputs (ADSC, ADSP, and ADV), Write Enables (BWa, BWb, BWc, BWd,

AS5SP128K32DQ

Abstract: CMOS linear array
Contextual Info: COTS PEM AS5SP128K32DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 4.0Mb, 128K x 32, Synchronous SRAM Fast Access Times Parameter Cycle Time Clock Access Time

AS5SP512K36DQ

Contextual Info: SSRAM AS5SP512K36DQ A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Austin Semiconductor, Inc. Plastic Encapsulated Microcircuit Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns

CY7C1382

Contextual Info: CY7C1380A CY7C1382A PRELIMINARY 512K x 36 / 1M x 18 Pipelined SRAM Features inputs, address-pipelining Chip Enable CE , burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd and BWE), and Global Write (GW). • • • • • •

CY7C1380B

Abstract: CY7C1382 CY7C1382B
Contextual Info: 1CY7C1380B CY7C1380B CY7C1382B PRELIMINARY 512K x 36 / 1 Mb x 18 Pipelined SRAM Features inputs, address-pipelining Chip Enable CE , burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd and BWE), and Global Write (GW). • • •

AS5SP512K36DQ

Contextual Info: SSRAM A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A AS5SP512K36DQ Plastic Encapsulated Microcircuit Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns 81 84 82 83 85 87 86 89 88

Contextual Info: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit

Contextual Info: CO TS PEM COTS SSRAM AS5SP256K36DQ Austin Semiconductor, Inc. 81 84 82 83 87 85 86 89 88 91 92 90 95 93 96 94 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\

AS5SP256K36DQ

Abstract: transistor w2d 850C
Contextual Info: CO TS PEM COTS SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Austin Semiconductor, Inc.

w2d 98

Contextual Info: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit

M5M5V5636GP

Abstract: M5M5V5636GP-25
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

M5M5V5636GP

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

M5M5T5636GP

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

M5M5V5A36GP

Abstract: M5M5V5A36GP-75 M5M5V5A36GP-85
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

VOICE RECORDER IC

Abstract: W51300 VOICE RECORDER circuits 14 pin ic recorder voice VOICE RECORDER playback system SPK Electronics voice ic
Contextual Info: W51300 FLASH VR CONTROLLER GENERAL DESCRIPTION The W51300 is a voice recorder IC which contains A/D and D/A converters to digitize and reproduce voice signals. An anti-alias/smoothing filter, AGC circuit, MIC preamplifier, and speaker power amplifier are used to smooth the input voice and set the output voice to a certain volume while

Contextual Info: White Electronic Designs WED2DL32512V 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION  Fast clock speed: 200, 166, 150 & 133MHz  Fast access times: 3.0ns, 3.5ns, 3.8ns & 4.0ns  Fast OE# access times: 3.0ns, 3.5ns, 3.8ns 4.0ns  +3.3V power supply VCC

Contextual Info: WED2DL32512V *PRELIMINARY 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION  Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst SRAMs integrate two

Contextual Info: White Electronic Designs WED2DL32512V 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst

Contextual Info: White Electronic Designs WED2DL32512V 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION „ Fast clock speed: 200, 166, 150 & 133MHz „ Fast access times: 2.5ns, 3.5ns, 3.8ns & 4.0ns „ Fast OE# access times: 2.5ns, 3.5ns, 3.8ns 4.0ns „ Single +3.3V power supply VCC