BWD TRAN Search Results

Contextual Info: COTS PEM AS5SP256K36DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0

CY7C1441V33

Abstract: CY7C1443V33
Contextual Info: CY7C1441V33 CY7C1443V33 CY7C1447V33 PRELIMINARY 1M x 36/2M x 18/512K x 72 Flow-Thru SRAM Features inputs include all addresses, all data inputs, addresspipelining Chip Enable CE , Burst Control Inputs (ADSC, ADSP, and ADV), Write Enables (BWa, BWb, BWc, BWd,

AS5SP512K36DQ

Contextual Info: SSRAM AS5SP512K36DQ A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Austin Semiconductor, Inc. Plastic Encapsulated Microcircuit Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns

CY7C1382

Contextual Info: CY7C1380A CY7C1382A PRELIMINARY 512K x 36 / 1M x 18 Pipelined SRAM Features inputs, address-pipelining Chip Enable CE , burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd and BWE), and Global Write (GW). • • • • • •

AS5SP512K36DQ

Contextual Info: SSRAM A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A AS5SP512K36DQ Plastic Encapsulated Microcircuit Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns 81 84 82 83 85 87 86 89 88

Contextual Info: CO TS PEM COTS SSRAM AS5SP256K36DQ Austin Semiconductor, Inc. 81 84 82 83 87 85 86 89 88 91 92 90 95 93 96 94 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\

w2d 98

Contextual Info: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit

M5M5V5636GP

Abstract: M5M5V5636GP-25
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

M5M5V5636GP

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

M5M5V5636GP

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

M5M5T5636GP

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

M5M5V5A36GP

Abstract: M5M5V5A36GP-75 M5M5V5A36GP-85
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: White Electronic Designs WED2DL32512V 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst

Contextual Info: 350A CY7C1350A/GVT71128ZC36 128Kx36 Pipelined SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between write and read cycles • Fast clock speed: 143, 133 and 100 MHzInternally synchronized registered outputs eliminate the need to control OE

Contextual Info: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS z z MARKING -8.5* -10 DQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76

GVT71128ZB36

Contextual Info: GALVANTECH, INC. GVT71128ZB36 128K X 36 FLOW-THROUGH ZBL SRAM SYNCHRONOUS 128K x 36 SRAM ZBL SRAM +3.3V SUPPLY, 2-BIT BURST COUNTER FLOW-THRU OUTPUT SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • Zero Bus Latency, no dead cycles between write and read

Contextual Info: 1Mb: 64K x 18, 32K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM 1Mb SYNCBURST SRAM MT58L64L18F, MT58L32L32F, MT58L32L36F 3.3V VDD, 3.3V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD • Separate +3.3V +0.3V/-0.165V isolated output

Contextual Info: 1Mb: 64K x 18, 32K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM MT58L64L18F, MT58L32L32F, MT58L32L36F 1Mb SYNCBURST SRAM 3.3V VDD, 3.3V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD • Separate +3.3V +0.3V/-0.165V isolated output buffer

Contextual Info: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ, DQC & DQCR) FEATURES              DQPc DQc DQc VDDQ Vss DQc DQc DQc DQc Vss VDDQ DQc DQc Vss VDD NC Vss

GVT71128ZC36

Contextual Info: GVT71128ZC36 128K X 36 PIPELINED ZBL SRAM GALVANTECH, INC. SYNCHRONOUS ZBL SRAM PIPELINED OUTPUT FEATURES • • • • • • • • • • • • • • • Zero Bus Latency, no dead cycles between write and read cycles Fast clock speed: 143, 133, 117, and 100MHz

CY7C1355A

Abstract: CY7C1357A
Contextual Info: CY7C1357A CY7C1355A 256K x 36/512K x 18 Synchronous Flow-Thru SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between write and read cycles • Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns • Fast clock speed: 133, 117, and 100 MHz

voice recorder and playback circuit

Abstract: W51300 w55F
Contextual Info: iVinbond Electronics Corp. W51300 FLASH VR CONTROLLER GENERAL DESCRIPTION The W51300 is a voice recorder 1C which contains A/D and D/A converters to digitize and reproduce voice signals. An anti-alias/smoothing filter, AGC circuit, MIC preamplifier, and speaker power