BVCEO 2000 Search Results

N3501

Abstract: BTN3501J3
Contextual Info: Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2009.02.04 Page No. : 1/7 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN3501J3 BVCEO IC RCESAT 80V 8A 38mΩ Features • Low VCE sat • High BVCEO • Excellent current gain characteristics

il1 opto

Abstract: IL5 10-2
Contextual Info: IL1/2/5 Phototransistor Optocoupler FEATURES • Current Transfer Ratio at IF=10 mA IL1, 20% Min. IL2, 100% Min. IL5, 50% Min. • High Collector-Emitter Voltage IL1 – BVCEO=50 V IL2, IL5 – BVCEO=70 V • Field-Effect Stable by TRansparent IOn Shield TRIOS

Contextual Info: IL1/2/5 Phototransistor Optocoupler FEATURES • Current Transfer Ratio at IF=10 mA IL1, 20% Min. IL2, 100% Min. IL5, 50% Min. • High Collector-Emitter Voltage IL1 – BVCEO=50 V IL2, IL5 – BVCEO=70 V • Field-Effect Stable by TRansparent IOn Shield TRIOS

QUAD OPTO COUPLERS

Contextual Info: DUAL CHANNEL ILD1/2/5 QUAD CHANNEL ILQ1/2/5 Phototransistor Optocoupler FEATURES • Current Transfer Ratio at IF=10 mA ILD/Q1, 20% Min. ILD/Q2, 100% Min. ILD/Q5, 50% Min. • High Collector-Emitter Voltage ILD/Q1: BVCEO=50 V ILD/Q2, ILD/Q5: BVCEO=70 V • Field-Effect Stable by TRansparent IOn Shield

saturated switches

Contextual Info: DUAL CHANNEL ILD1/2/5 QUAD CHANNEL ILQ1/2/5 Phototransistor Optocoupler FEATURES • Current Transfer Ratio at IF=10 mA ILD/Q1, 20% Min. ILD/Q2, 100% Min. ILD/Q5, 50% Min. • High Collector-Emitter Voltage ILD/Q1: BVCEO=50 V ILD/Q2, ILD/Q5: BVCEO=70 V • Field-Effect Stable by TRansparent IOn Shield

HSC3417

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6618-C Issued Date : 1994.05.12 Revised Date : 2000.10.01 Page No. : 1/3 HSC3417 NPN EPITAXIAL PLANAR TRANSISTOR Features • High–Definition CRT Display Video Output Applications • High Breakdown Voltage: BVCEO=300V

MOC8050M

Abstract: MOC8021M MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM optocoupler no base connection fairchild optocoupler
Contextual Info: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a

MOC8050

Abstract: MOC8050M MOC8021M MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM
Contextual Info: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a

Contextual Info: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a

LDA110

Abstract: optocoupler bi-directional
Contextual Info: LDA110 Optocoupler, Bidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR Typical Saturation Voltage - VCE (sat) Input Control Current - IF Rating 30 8500 Units VP % 1

IEC60747-5-2

Abstract: MOC8021M MOC8050M MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM
Contextual Info: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocoupler. The devices have a gallium arsenide infrared emitting diode coupled with a

nte160

Contextual Info: BI-POL AR TRANSISTORS Typical Forward Current Gain Maximum Collector Power Dissipation Watts Case Style Diag. No. Maximum Collector Current (Amps) >C BVCbo BVceo BVebo hre Pd »T Darlington Switch (Compì to NTE2427) SOT-89 555a 0.5 90 80 (CER) 5 2000 Min

CPC1001N

Abstract: EIA-481-2 J-STD-033
Contextual Info: CPC1001N Unidirectional Input, Single-Transistor Output Optocoupler Parameter Breakdown Voltage BVCEO Current Transfer Ratio Min Saturation Voltage Input Control Current Rating 30 100 0.3 0.2 Units V % V mA CPC1001N is a unidirectional input optocoupler with

Contextual Info: CPC1001N Optocoupler: Unidirectional Input, Single-Transistor Output Parameter Breakdown Voltage BVCEO Current Transfer Ratio Min Saturation Voltage Input Control Current Rating 30 100 0.3 0.2 Units V % V mA CPC1001N is a unidirectional input optocoupler with

Contextual Info: IL66/ ILD66/ ILQ66 VISHAY Vishay Semiconductors Optocoupler, Photodarlington Output, With Internal Rbe Single, Dual, Quad Channel Single Channel Features • • • • Internal RBE for High Stability Four Available CTR Categories per Package Type BVCEO > 60 V

infrared emitters and detectors

Abstract: IL66 IL66-1 IL66-2 IL66-3 IL66-4 ILD66 ILQ66 VDE0884
Contextual Info: IL66/ ILD66/ ILQ66 VISHAY Vishay Semiconductors Optocoupler, Photodarlington Output, With Internal Rbe Single, Dual, Quad Channel Single Channel Features • • • • Internal RBE for High Stability Four Available CTR Categories per Package Type BVCEO > 60 V

ILD66

Contextual Info: IL66/ ILD66/ ILQ66 VISHAY Vishay Semiconductors Optocoupler, Photodarlington Output, With Internal Rbe Single, Dual, Quad Channel Features • • • • Single Channel Internal RBE for High Stability Four Available CTR Categories per Package Type BVCEO > 60 V

D1857

Abstract: TRANSISTOR d1857 BTD1857A3 BTB1236A3 NPN transistor ECB TO-92 500ma 1A
Contextual Info: CYStech Electronics Corp. Spec. No. : C855A3 Issued Date : 2004.12.23 Revised Date : 2006.03.17 Page No. : 1/9 Silicon NPN Epitaxial Planar Transistor BTD1857A3 Description • High BVCEO • High current capability • Complementary to BTB1236A3 • Pb-free package

BTN3501J3

Abstract: N3501
Contextual Info: Spec. No. : C606J3 Issued Date : 2003.10.07 CYStech Electronics Corp. Revised Date :2004.04.12 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN3501J3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics Symbol Outline

SFH692AT

Abstract: VCC-100 opto 721 optocoupler Mini-Flat Package
Contextual Info: SFH692AT Photodarlington Optocoupler High BVCEO Voltage Miniflat SOP Package FEATURES • Current Transfer Ratio, min. 1000% • SOP Small Outline Package • Isolation Test Voltage, 3750 VRMS (1.0 s) • High Collector-Emitter Breakdown Voltage, VCEO=300 V

IC 4047

Abstract: N3501 IC 4047 6v IC 4047 datasheet BTN3501E3
Contextual Info: Spec. No. : C606E3 Issued Date : 2004.08.18 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN3501E3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics Symbol Outline BTN3501E3

D44H11

Abstract: D44H11J3 transistor d44h11
Contextual Info: Spec. No. : C606J3-A Issued Date : 2005.08.15 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor D44H11J3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics Symbol Outline D44H11J3

D44H11

Abstract: D44H11FP
Contextual Info: Spec. No. : C606FP Issued Date : 2005.03.29 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor D44H11FP Features • Low VCE sat • High BVCEO • Excellent current gain characteristics • Pb-free package

TF 450

Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BVceo BVebo h FE Pd fT T0218