BTN3501J3
Abstract: N3501
Contextual Info: Spec. No. : C606J3 Issued Date : 2003.10.07 CYStech Electronics Corp. Revised Date :2004.04.12 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN3501J3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics Symbol Outline
|
Original
|
c606j3btn3501j3o-252ul94v-0+1n3501
|
PDF
|
D44H11
Abstract: D44H11J3 transistor d44h11
Contextual Info: Spec. No. : C606J3-A Issued Date : 2005.08.15 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor D44H11J3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics Symbol Outline D44H11J3
|
Original
|
c606j3-ad44h11j3o-252ul94v-0+2d44h11transistor d44h11
|
PDF
|
N3501
Abstract: BTN3501J3
Contextual Info: Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2009.02.04 Page No. : 1/7 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN3501J3 BVCEO IC RCESAT 80V 8A 38mΩ Features • Low VCE sat • High BVCEO • Excellent current gain characteristics
|
Original
|
c606j3btn3501j3o-252ul94v-0+1n3501
|
PDF
|
D44H11
Abstract: D44H11J3
Contextual Info: Spec. No. : C606J3-A Issued Date : 2005.08.15 Revised Date :2009.02.04 Page No. : 1/7 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor D44H11J3 BVCEO IC RCESAT 80V 8A 60mΩ Features • Low VCE sat • High BVCEO • Excellent current gain characteristics
|
Original
|
c606j3-ad44h11j3o-252ul94v-0+1d44h11
|
PDF
|