BV SOT Search Results

ZXTP25140BFH

Abstract: ZXTP25140BFHTA
Contextual Info: ZXTP25140BFH 140V, SOT23, PNP medium power transistor Summary BV BR CEX > -180V; BV(BR)CEO > -140V BV(BR)ECO > -7V ; IC(cont) = -1A Rce(sat) = 180 m⍀ typical Vce(sat) < -260mV @ 1A ; PD = 1.25W Description C Advanced process capability and package design have been used to

ZXTN2

Contextual Info: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to

ZXTN25060BFH

Abstract: ZXTP25060BFH ZXTP25060BFHTA
Contextual Info: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to

marking 056

Abstract: ZXTP25100BFH ZETEX marking 056 SOT23 ZXTN25100BFH ZXTP25100BFHTA ZXTN
Contextual Info: ZXTP25100BFH 100V, SOT23, PNP medium power transistor Summary BV BR CEX > -140V, BV(BR)CEO > -100V BV(BR)ECX > -7V ; IC(cont) = -2A VCE(sat) < -130mV @ -1A RCE(sat) = 108m⍀ typical PD = 1.25W Complementary part number ZXTN25100BFH Description C Advanced process capability and package design have been used to

TS16949

Abstract: ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA
Contextual Info: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to

Contextual Info: ZXTP19020DFF 20V, SOT23F, PNP medium pow er transistor Summary BV CEO > -20V BV ECO > -4V IC cont = 5.5A V CE(sat) < 44mV @ 1A RCE(sat) = 26mΩ PD = 1.5W Complementary part number: ZXTN19020DFF Description C Advanced process capability and package design have been used to

NPN CBO 40V CEO 25V EBO 5V

Abstract: MMST8598
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.

marking r2k

Abstract: marking r1c GAJ SOT23 R1P SOT-223
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.

Contextual Info: LP0801 h m . _ Low ThreshoJ P relim ina ry P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV DGS -16.5V D max (min) V GS(th) (max) 12.0Q -20 0m A -1.0V DS(ON) ^D(ON) Order Number / Package TO-236AB*

Contextual Info: T ra n s is to rs <S u rfa ce Mounted T y p e s > •SMT SC-59/Japanese SOT-23 •NPN Transistors Function Type ■ Ic (mA) Max. Polarity DG07717 BV ceo (V) BV ebo (V) 331 ■RHM @IC & VcE hpE Min. nonm Max. (mA) f T (MHz) Min. (V) Cob (pF) Max. LNGPA MMST5086

8F SOT-23 PNP on

Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
Contextual Info: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process

NTE2360

Contextual Info: BI-POL AR TRANSISTORS Emitter to Base Volts Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) »T Case Style Diag. No. BVCeo BV ebo hpE Pd T0220 Isol Tab 560a •c 8 BV cbo Darlington Switch w/lntemal Damper & Zener Diode, tf = 1ns 60±10 60±10

diode T132

Abstract: resistor 22k ECG2355 resistor 10k ECG2352 ECG2343 ECG2344 ECG2347 resistor 4.7k ECG2365
Contextual Info: Transistors cont'd ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts BV c b o Description and Application Collector To Emitter Volts BV c e O Max. Collector Current lc Amps Base to Emitter Volts b v EBO Max. Device Diss. PD

resistor 22k

Abstract: ecg2340 ECG2362 ECG2345 diode t48 ECG2349 ECG2341 ECG2342 ECG2343 ECG2344
Contextual Info: T ran sistors cont'cl ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts BV c b o Description and Application Collector To Emitter Volts BVc e O Base to Emitter Volts BV e b O Max. Collector Current lc Amps Max. Device

BC847U

Abstract: BC857U
Contextual Info: BC857U Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847U Ordering Information Type NO. Marking Package Code BC857U BV SOT-323

MMB25V6ALT1

Abstract: MMBZ15VALT1 MMBZ20VALT1 MMBZ20VALTI BZ5V6
Contextual Info: ‘ MOTOROLA SEMICONDUCTOR o TECHNICAL Order this document bv MMBZ5V6ALT1/D DATA MMBZ5V6ALTI MMBZ6V2ALTI MMBZ15VALTI 5.6, 6.215 &20 Volt SOT-23 Dual Monolithic Common Anode Zeners * MMBz20vALT4~*, Motorola Transient Voltage Suppressors for ESD Protection

BC847UF

Abstract: BC857UF
Contextual Info: BC857UF Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847UF Ordering Information Type NO. Marking BC857UF Package Code BV SOT-323F

zvn4424

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSU E 4 - OCTOBER 1995 ZVIM4424G - FEATURES * * * 240 Volt BV ds Extremely low RDS on =4-3Q Low threshold and Fast switching APPLICATIONS * Earth recall and dialling switches

zvn4206

Abstract: zvn4206 application FAST DMOS FET Switches n-CHANNEL ZVN4206G DSA003784
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206G ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage VGS(th) 1.3 Gate-Body Leakage MAX.

VN0610L

Abstract: TL032
Contextual Info: N-Channel Enhancement-Mode MOS Transistors, Zener Gate Protected CQIOOIC CORPORATION VN0610L / VN10KE/ VN10KM/ VN10KT ORDERING INFORMATION FEATURES • Available in Surface Mount SOT-23 • Zener protected • Low rDS on <5fl • 60V Bv APPLICATIONS Temperature Range

Contextual Info: Advanced Power Electronics Corp. AP01N40G-HF-3 N-channel Enhancement-mode Power MOSFET Fast Switching Characteristics D Low Gate Charge Simple Drive Requirement G 100% Avalanche-tested RoHS-compliant, halogen-free SOT-89 package BV DSS 400V RDS ON 16Ω ID

Contextual Info: Advanced Power Electronics Corp. AP2530GY-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Low Gate Charge Low On-resistance N-CH D2 S1 Fast Switching Performance D1 RoHS-compliant, halogen-free G2 P-CH S2 SOT-26 Y G1 Description BV DSS

VN10KM

Abstract: vn10ke
Contextual Info: _ I CGIOOIC \J N-Channel Enhancement-Mode /WOS Transistors, Zener Gate Protected C O RPO RATIO N VN0610L / VN10KE/ VN10KM/ VN10KT FEATURES ORDERING INFORMATION • • • • Part Available in Surface Mount SOT-23 Zener protected Low rDS on <SQ 60V Bv Package

VN10KM

Abstract: VN10K 55C 15v ZENER DIODE C06 60V VN10KE vn10kt VN0610L XVN10KM VN010KE
Contextual Info: I » U lU W It N-Channel Enhancement-Mode MOS Transistors, Zener Gate Protected CORPORATION VN0610L / VN10KE/ VN10KM/ VN10KT ORDERING INFORMATION FEATURES • • • • Part Available in Surface Mount SOT-23 Zener protected Low rDS on <5£i 60V Bv VN0610L