BV EI 300 Search Results

d3s diode

Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND
Contextual Info: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package * ' If BV qss/ BV dgs min RDS(ON) (max) 160V 350Ü 200V 300Ì2 300V 300CÌ 25mA 320V 350£2 25mA 400V 350£2

ap0420

Abstract: AP0432
Contextual Info: A P04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package * t 700n -15mA -1 .5nA — AP0416NA AP0416WG AP0416ND -200V 600n -15mA — — AP0420NA — AP0420ND -300V

Contextual Info: SAMSUNG ELECTRONICS INC MMBT2222A 42E D B 7 ^ 4 1 4 2 000=1033 S BISM6K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25°C C h a ra c te ris tic Sym bol R a tin g U n it Collector-Base Voltage Veso 75 V Collector-Emitter Voltage

TLP626

Contextual Info: GaAs IRED-a PHOTO-TRANSISTOR TLP626,-2,-4 TLP626 PRO GRAM M ABLE CONTROLLERS AC/D C-IN PU T MODULE TELECOM M UNICATION The TOSHIBA TLP626, -2 and -4 consist of gallium arsenide infrared em itting diodes connected in inverse parallel, optically coupled to a

Contextual Info: LP0701 inc. P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV ° ¥ dgs p Order Number / Package max (min) V GS(th) (max) TO-92 SO-8 □ice 1 .5 ÌÌ -1.25A -1.0V LP0701N3 LP0701LG LP0701ND DS(ON) -16.5V '[>(ON) Features □ Ultra low threshold

fp50n06

Abstract: F50N06LE 50N06LE rfp50n06 T0-262AA
Contextual Info: U A D D ic RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 50A,60V • rDS ON =0.022i2 • • • • • SOURCE

transistor C239

Abstract: NPN C239
Contextual Info: BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector-Em itter Voltage :B C 2 3 7 Rating Unit V cES V 50 30 V :B C 2 3 7 45 V :B C 2 3 8 /2 3 9

BV 726 C

Abstract: BV 724 C
Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BVDGS Order Number / Package DS ON '□(ON) (max) (min) VGS(ttl) (max) TO-92 SO-8 Die 1.5U -1.25A -1.0V LP0701N3 LP0701LG LP0701ND D -16.5V Features Advanced MOS Technology

L902

Abstract: 2SC3838K 2SC4083 T106 T107 T146 T147 FC 0137 ic lC 7520
Contextual Info: h "7 >V 7> £ /Transistors 2SC3838K/2SC4083 I t N P N Epitaxial Planar NPN Silicon Transistors ¡SJgj& igliffl/RF Amplifier 2SC3838K 2SC4083 • ^Hfé'íJ'i&EI/Dimensions Unit : mm 1) fT=3.2GHz (Typ.) 2SC3838K 2) Cc-fbb ¡F'M < ¡SflJiSo 2SC4083 2 .9 ± 0 .2

VN10KN

Abstract: VN10KN9 vn10k
Contextual Info: V N 10K Mï Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BV0SS / ^DS<ON *D ON) BV dgs (max) (min) TO-52 TO-92 60V 5£2 0.5A VN10KN9 VN10KN3 Advanced DMOS Technology High Reliability Devices

Contextual Info: KSR1014 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter. Interface circuit Driver circuit • Built in bias Resistor(Ri = 4.7Kii, R ,=47K!i) • Complement toKSR2014 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

VN0116N3

Abstract: VN0116N5 vN0116N2 VN01-1 VN0116 VN0120N5
Contextual Info: 0 Supertex inc. VN 01C N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices f Order Number / Package BV0SS/ ^DS O N ' d (ON) b v dgs (max) (min) TO-39 TO-92 TO-220 Dicet 160V 10£2 0.4A VN0116N2 VN0116N3 VN0116N5

LA7040

Contextual Info: LA 7 0 4 0 No. 11 3 9 a 7092 SANYO VTRffl*—rV O * '}% & - j . - X LA 7 0 4 0 14 i f - ^ T 's T , •; '> V ? No. 1 139 VTR f W f # ALC 7 □ "/ 9 <Of >WM 4t € •is n * J: ? « * ■ & / « £ \/ / IC X*> * • □ y ■'/ ? ■ 3 V h □ - /u 0 7 v 7 *?\ t^ $ iW 3 z> x. ? n

Contextual Info: SUPERTEX INC blE » fiTTBE'îS DDDaSin 3T1 ISTX AP04 V . Supertex inc. G ate Protected Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package BVoss/ BVoos min RDS(ON) (max) •dcon) (min) loss” V|)S =

siemens rs 1002

Contextual Info: SUPERTEX INC Dl DE I 07735^5 0001751 7 P-Channel Enhancement-Mode Vertical D M O S Power FETs Ordering Information -=• 30 if A3 Order Number / Package TO-92 TO-39 B V 0SS/ BV qqs *D ON (min) -160V 100£2 -100mA VP1316N2 -200V w on -100mA VP1320N2 • VP1316N3

Contextual Info: h 7 > y X $ /Transistors FMY3 FMY3 x f c f $ ^ r '> T ^ 7 V - ^ y a . 7 7; i / $ - ; E - ; i / K P N P / N P N y ' J : l > h 7 / y ^ •f >/<— £ K 7 < /''/In ve rter Driver Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor y — >f — 5 — T

transistor X2N

Abstract: 3811A 2N381
Contextual Info: calocft Monolithic DualMatched PNP General Purpose Amplifier T Z l-Z l \J 2N3810A/2N3811A 4flE D CO RPO RATIO N • 1Ö443E2 OODGSSfl 5 m C G C CALOGIC CORP 2N3810A/2N3811A ABSO LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise noted Em itter-Base Voltage (Note 1 ) .-5V

Contextual Info: h 7 > y ^ ^ / T ransistors FMG7 FMG7 11° £ * t7JU7 V - ± zl 7 J1/ 5 X ^ - J1/ K N PN V 1 J =1 > h 7 > V X ? •f ^ K v - f /V ln v e rte r Driver Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor • ^tJfjTf-'iigl/'Dimensions Unit : mm • 1) X —

Contextual Info: BAS16 www.surgecomponents.com Silicon Epitaxial Planar Switching Diode Features • Small package 3 3 n • Low forward voltage • Fast reverse recovery time • Small total capacitance / u 1 u 2 M a rk in g C ode : 5D S O T -2 3 P la s tic P a c k a g e

IEC-801-2 ESD

Abstract: MONOLITHIC DIODE ARRAYS tvs-diode TVS RS422 TVS diode line voltage Application Note
Contextual Info: Ei8LC05 thru Ei8LC15 Low Capacitance, Bidirectional, Monolithic TVS Diode Network independent for multiple I/O port protection. These monolithic diode array networks can be used to protect combinations of 8 unidirectional or bi-directional lines. They provide ESD and

TPC8202

Contextual Info: TOSHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8202 INDUSTRIAL APPLICATIONS LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive Low Drain-Source ON Resistance : R ßS (ON)“ 41mO (Typ.) High Forward Transfer Adm ittance: |Yfs|= 9 S (Typ.)

Contextual Info: TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : R ßS (ON)= 15mO (Typ.) High Forward Transfer Adm ittance: |Yfs| = l l S (Typ.)

2SK2507

Contextual Info: TOSHIBA 2SK2507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2507 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2

2-10P1B

Abstract: 2SK2733 transistor k 208
Contextual Info: TOSHIBA 2SK2733 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2733 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce ON Resistance