BV EI 300 Search Results

BV EI 382 1193

Abstract: BV EI 300 ta70-b
Contextual Info: - HAHN - Elektrobau GmbH phone: +49 6402 808-0 Bellersheimer Strasse 45 telefax: +49 (6402) 808-60 35410 Hungen e-mail: info@hahn-trafo.de Germany data sheet: BV EI 382 1193 item height/packet height power (ta70/B)

BV EI 302 2000

Abstract: Trafo datasheets BV 302
Contextual Info: phone: 49 6402 808-0 HAHN - Elektrobau GmbH telefax: 49 (6402) 808-60 Bellersheimer Strasse 45 e-mail: info@hahn-trafo.de D - 35410 Hungen data sheet: BV EI 302 2000 size 2 a: height 21.8 mm 1.8 VA ta 40/F

IN4942

Abstract: 1N4946 IN4948 1N4942 1N4943 1N4944 1N4945 1N4947 1N4948 AII3
Contextual Info: EDAL INDU STR IES 3 0 c]S71b □ G Q Q 3 2 ei T7Ô M5E D INC EDL t ' ói-ì.3 .250» 1» » t 1« .115” DIA- .032” DIA, Bv PIV SEE CHART Io Is 1 AMP - Vf 1.3 v @ 1 AMP Ir 500uA MAX. @ ’ PIV @ AMPS SEE CHART trr STYLE & • @ Alte STAMP EQÏÏIV. TO

BV EI 302 2022

Abstract: BV EI 306 3365 BV EI 303 2011 BV EI 305 2800 BV EI 304 2082 BV EI 305 2057 BV EI 304 2081 BV EI 304 2047 BV EI 302 2021 BV EI 303 34
Contextual Info: EI 30 Трансформаторы для печатных плат Выходная мощность: 0,5 BA – 0,7 BA • Компактность • Обязательное тестирование на соответствие стандартам ENEC 10, VDE, UL и CSA

BV EI 382 1191

Abstract: BV EI 382 1186 EI 38 BV EI 382 1194 BV EI 382 1190 BA231 BV EI 382 1189 BV EI 382 1195 BV EI 382 1192 BV EI 300
Contextual Info: Выходная мощность: 4,5 BA EI 38 Трансформаторы для печатных плат • Мощность – до 6 ВА • Трансформаторы температурного класса 70°C/B не имеют встроенного предохранителя от токов короткого

d3s diode

Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND
Contextual Info: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package * ' If BV qss/ BV dgs min RDS(ON) (max) 160V 350Ü 200V 300Ì2 300V 300CÌ 25mA 320V 350£2 25mA 400V 350£2

MB87L2250

Abstract: carrier frequency offset estimation in ofdm viterbi algorithm mb87j "channel estimation"
Contextual Info: Product Data Sheet April 1999 Edition 1.2 MB87J205A DVB Terrestrial OFDM Demodulator/FEC OVERVIEW Plastic Flat Package FPT-144P-M08 Fujitsu’s MB87J205A is an ETC 300 477 compliant Single Chip Demodulator including Forward-Error Correction Function and A/D Converter for DVB Terrestrial Digital

ap0420

Abstract: AP0432
Contextual Info: A P04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package * t 700n -15mA -1 .5nA — AP0416NA AP0416WG AP0416ND -200V 600n -15mA — — AP0420NA — AP0420ND -300V

Contextual Info: H A R R RFG40N10LE, RFP40N10LE, RF1S40N1 OLE, RF1S40N1OLESM IS semiconductor 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 40 A, 100V r D S O N = 0.040Q • 2kV ESD Protected

Contextual Info: SAMSUNG ELECTRONICS INC MMBT2222A 42E D B 7 ^ 4 1 4 2 000=1033 S BISM6K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25°C C h a ra c te ris tic Sym bol R a tin g U n it Collector-Base Voltage Veso 75 V Collector-Emitter Voltage

TLP626

Contextual Info: GaAs IRED-a PHOTO-TRANSISTOR TLP626,-2,-4 TLP626 PRO GRAM M ABLE CONTROLLERS AC/D C-IN PU T MODULE TELECOM M UNICATION The TOSHIBA TLP626, -2 and -4 consist of gallium arsenide infrared em itting diodes connected in inverse parallel, optically coupled to a

44t transistor

Abstract: transistor 1B15 T110 imx7 transistor 44t
Contextual Info: h 7 > v 7> £ /Transistors I M X 7 1 IMX7 T M V U - x ' y * K U î - J I ' K t V W X Isolated Mini-Mold Device /Medium Power Amp. • W B ’Ti&EI/Dim ensions Unit : mm 1) SMT (SC-59) tW i — h Tt' 5o 2) s M T < D i « î i * « i c j : » j , m u m j>(4)

marking Y1 transistor

Abstract: y1 transistor complementary npn-pnp power transistors y1 npn transistor marking y1 FMB2227A Supersot 6 transistor y1
Contextual Info: S E M IC O N D U C T O R FMB2227A ,r , C2 ei -•P C1 Package: SuperSOT-6 Device Marking: .001 i Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 w" E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge

Contextual Info: LP0701 inc. P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV ° ¥ dgs p Order Number / Package max (min) V GS(th) (max) TO-92 SO-8 □ice 1 .5 ÌÌ -1.25A -1.0V LP0701N3 LP0701LG LP0701ND DS(ON) -16.5V '[>(ON) Features □ Ultra low threshold

vp1316

Abstract: VP1316N2 VP1316N3 VP1320N2 VP1320N3 VP13C
Contextual Info: SUPERTEX INC Dl T i F | Û 7 ? 3 2 ti 5 0 0 0 1 7 5 1 7 |~ P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVdss / Order Number / Package TO-92 TO-39 *D ON qqS (max) (min) -160V 100Î2 -100mA VP1316N2 VP1316N3 -100mA VP1320N2 VP1320N3

lc 4011

Contextual Info: 2SC2063M/2SC4011 I ' 7 > v ^ £ /Transistors 2SC 2063M 2S C 4011 I t : £=*•'> 7 ^ 7 ^ - ^ NPN Epitaxial Planar NPN Silicon Trannsistors ¡ÜJil>j£*Blliffl/R F Amplifier • M fé '+ ìiE I/D im e n s io n s Unit : mm •» ft (Cob= 1 .6 p F T y p .)

transistor C239

Abstract: NPN C239
Contextual Info: BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector-Em itter Voltage :B C 2 3 7 Rating Unit V cES V 50 30 V :B C 2 3 7 45 V :B C 2 3 8 /2 3 9

BV 726 C

Abstract: BV 724 C
Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BVDGS Order Number / Package DS ON '□(ON) (max) (min) VGS(ttl) (max) TO-92 SO-8 Die 1.5U -1.25A -1.0V LP0701N3 LP0701LG LP0701ND D -16.5V Features Advanced MOS Technology

L902

Abstract: 2SC3838K 2SC4083 T106 T107 T146 T147 FC 0137 ic lC 7520
Contextual Info: h "7 >V 7> £ /Transistors 2SC3838K/2SC4083 I t N P N Epitaxial Planar NPN Silicon Transistors ¡SJgj& igliffl/RF Amplifier 2SC3838K 2SC4083 • ^Hfé'íJ'i&EI/Dimensions Unit : mm 1) fT=3.2GHz (Typ.) 2SC3838K 2) Cc-fbb ¡F'M < ¡SflJiSo 2SC4083 2 .9 ± 0 .2

PCH200EG

Abstract: pch200ER PC200TWRG1 PC200TR5
Contextual Info: a?E j> LEDTRONICS üeiTiimn LEDTRONICS,Inc 5453705 0000320 7 • -"P 4 /-Z 2 » RIGHT ANGLE MOUNT- DIFFUSED £ CLEAR T O 5mm PC BOARD LEDs Model PC19Q/200 HI-EFF/ULTRA/BIC0L0R5/RESIS FEATURES: X RIGHT ANGLE MOUNT AT 0.25" CEN TERS. S ID E STACKABLE X CHOICE OF LED S: STD RED, H I-E F F IC , ULTRA TO 3000MCD,

VN10KN

Abstract: VN10KN9 vn10k
Contextual Info: V N 10K Mï Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BV0SS / ^DS<ON *D ON) BV dgs (max) (min) TO-52 TO-92 60V 5£2 0.5A VN10KN9 VN10KN3 Advanced DMOS Technology High Reliability Devices

Contextual Info: KSR1014 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter. Interface circuit Driver circuit • Built in bias Resistor(Ri = 4.7Kii, R ,=47K!i) • Complement toKSR2014 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: MITSUBISHI Neh POWER MOSFET FL16KM-6A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 • 10V DRIVE . 300V • V • rDS ON ( M A X ) .

VN0116N3

Abstract: VN0116N5 vN0116N2 VN01-1 VN0116 VN0120N5
Contextual Info: 0 Supertex inc. VN 01C N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices f Order Number / Package BV0SS/ ^DS O N ' d (ON) b v dgs (max) (min) TO-39 TO-92 TO-220 Dicet 160V 10£2 0.4A VN0116N2 VN0116N3 VN0116N5