BV 480 Search Results

C495 transistor

Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
Contextual Info: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75

XCV100E

Abstract: MB 300E XCV300E xc2v1000 PCI64-CL-FL-X100-C-256 RM7000C X300 PCI64-CL-P AK 1080 sdram full example c code
Contextual Info: TM Product Information January 2003 rev. 2002-2.03 LEONARDO CL CameraLinkTM Base-Medium-Full 2003 ARVOO Trading BV, all mentioned trademarks and registered trademarks are acknowledged. Specifications, models and options are subject to changes without any notice by ARVOO Trading BV.

RGB15

Abstract: YUV422 input analog CVBS output YUV411 YUV422 YUV444 RGB24 104-Plus video scaler RGB24 RGB32
Contextual Info: COLORYTM Product Information May 2003 rev. 2003-1.1 cost attractive CVBS framegrabber 2003 ARVOO Trading BV, all mentioned trademarks and registered trademarks are acknowledged. Specifications, models and options are subject to changes without any notice by ARVOO Trading BV.

C495 transistor

Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

NPN CBO 40V CEO 25V EBO 5V

Abstract: MMST8598
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.

5-Volt Data Bus

Abstract: 8096 microcontroller temperature control of 8096 3volt inverter 74HC00 74HC00 CMOS 1N4370A 74HC 5V 74HC00
Contextual Info: Interfacing Atmel LV/BV EPROMs on a Mixed 3-volt/5-volt Data Bus EPROM Introduction Interfacing Atmel Corporation’s low voltage LV/BV EPROMs on a common data bus with standard 5-volt devices can be achieved with relative ease if a few simple guidelines are followed. By

marking r2k

Abstract: marking r1c GAJ SOT23 R1P SOT-223
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.

8096 microcontroller

Abstract: 74HC00 74HC00 small signal output resistance 74HC00 SERIES DATA 3volt inverter 74HC00 analysis 74HC00 CMOS DIODE ZENER BV 74HC00 NOT GATE 8096 microcontroller datasheet
Contextual Info: CMOS EPROM Interfacing Atmel LV/BV EPROMs on a Mixed 3-Volt/5-Volt Data Bus Introduction Interfacing Atmel Corporation’s low voltage LV/BV EPROMs on a common data bus with standard 5-volt devices can be achieved with relative ease if a few simple guidelines are followed. By

8096 microcontroller

Abstract: 74HC00 CMOS 74HC00 temperature control of 8096 74HCoo
Contextual Info: CMOS EPROM Interfacing Atmel LV/BV EPROMs on a Mixed 3-Volt/5-Volt Data Bus Introduction Interfacing Atmel Corporation's low volt­ age LV/BV EPROMs on a common data bus with standard 5-volt devices can be achieved with relative ease if a few simple guidelines are followed. By

Contextual Info: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ.

Contextual Info: QFET N-CHANNEL FQB1N60, FQI1N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC Typ.

Contextual Info: QFET N-CHANNEL FQAF20N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. •

Contextual Info: QFET N-CHANNEL FQA12N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. •

Contextual Info: QFET N-CHANNEL FQB2N60, FQI2N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ.

Contextual Info: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ.

Contextual Info: QFET N-CHANNEL FQB3N60, FQI3N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ.

Contextual Info: QFET N-CHANNEL FQB4N60, FQI4N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 15nC Typ.

Contextual Info: QFET N-CHANNEL FQAF7N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. •

diode SM 78A

Contextual Info: QFET N-CHANNEL FQAF12N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. •

Contextual Info: QFET N-CHANNEL FQA20N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. •

Contextual Info: QFET N-CHANNEL FQB12N60, FQI12N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ.

diode SM 78A

Abstract: FQAF12N60
Contextual Info: QFET N-CHANNEL FQAF12N60 FEATURES BV dss = 600V Advanced New Design R DS ON = ° - 7 i2 Avalanche Rugged Technology lD = 7.8A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 42nC (Typ.)

MT 6236

Abstract: Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MMSF1ONO22D DATA DesignerSTM Data Sheet - I I Medium Power Surface Mount Products TMOS Single N-Channel with Monolithic Zener ESD Protected Gate EZFETSTM are an advanced series of power MOSFETS which

SSF3018

Abstract: TO220 Single 100V 60A Mosfet Avalanche diod p channel mosfet 100v top switch to220
Contextual Info: SSF3018 Feathers: ID=60A „ Advanced trench process technology „ Special designed for Convertors and power controls „ High density cell design for ultra low Rdson „ Fully characterized Avalanche voltage and current „ Avalanche Energy 100% test BV=100V