BUZ 11 BV Search Results

BUZ42

Contextual Info: SEMELAB 37E LTD » 0133107 0000253 * • SMLB t Hoo T-39-11 SEMELAB *SMA$ W JU BUZ 42 M O S POW ER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm r _ IU . J . max. A.5max 1.3 5.9 -i3-6r min. APPLICATIONS 15.8 max. • MOTOR CONTROLS • CONVERTERS

Contextual Info: SEUELAB LTD 3 7E D 0133107 0 DG0B71 □ ISMLB T-39-11 SEMELAB n •S//AS ^ BUZ 72A o 7 Woo MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm _10.3_ max. -»|3.6|» 1.3 ¿.5ma«. T¥ 5.9' i. . 2. 8 min. Ì 15>.l.8 APPLICATIONS 10 max. ■4. J

Contextual Info: 37E D SENELAB LTD Ö1331Ö? 0 0 0 0 2 7 3 T-39-11 SEMELAB ¡qoo £ 0 / >S//¿ g BUZ 74 MOS POWER MECHANICAL DATA N-Channel Enhancement M ode Dimensions in mm _10.3_ mux. A .5 m o x 1.3 -W 3.6H- J L . 2. 8 5.9 TÏ mi n. APPLICATIONS 5.1 15.8 X mÌQ ax. L J .J

relais datenbuch siemens

Abstract: siemens datenbuch triac zu 103 ma BSS97 diode sg 5 ts Scans-048 BUZ23 s489 DSAGER00059 Transistor Datenbuch
Contextual Info: SIEMENS SIPMOS Kleinsignaltransistoren Technische Beschreibung Ausgabe September 1986 Inh alt 1. Einleitung 5 2. Technologie 5 3. Schaltverhalten 6 4. D atenblattangaben 8 4.1 4.2 4.3 Drainstrom lD Gate-Schwellenspannung VGS th Temperaturabhängigkeit 8 8

KDS 9E

Abstract: l0225 C67078-A1307-A3 KDS 7B KDS 1M ksd 202 transistor buz 36 KDS 7c C67078-S1302-A2 transistor buz 293
Contextual Info: V^ll~ IVIV^vJ D l 17 on £ m \J a ir ia i* T rD WVVCI M C IM O I9 1 V I UUC. 9 ini c n a n n e i • Enhancement mode VPT05381 Type VDS Id BUZ 20 100 V 13,5 A •^DS on 0,2 Q Package 1> Ordering Code TO-220 AB C67078-S1302-A2 M a v jm n m P a tjn g e Parameter

BUZ MOSFET

Contextual Info: bOE D 3133107 SEMELAB PLC G0GDS42 2G3 • SMLB - " T S f l - Z 5 r r MAGNA TEC BUZ 905D BUZ 906D NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SWITCHING

Contextual Info: bDE D • 0133107 Q000533 ETG ■■ SULB SEMELAB PLC p rp r ''T'3cM S M A G IMA r^ tec BUZ 9 0 0 D b u z s o id NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICA TION FEATURES

Contextual Info: Standard Power MOSFETs BUZ 76 Füe Number 2264 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3 A, 400 V TDS Ionl = 1 . 8 f i Features: • SOA is power-dissipation limited a Nanosecond switching speeds a Linear transfer characteristics

BUZ 349 mosfets

Contextual Info: Standard Power MOSFETs BUZ 76 A File No. 2265 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.6 A, 400 V •"D SIonl = 2.5 £1 N-CHANNEL ENHANCEMENT MODE Features: • SOA is pow er-dissipation lim ite d m N anosecond s w itching speeds m Linear transfer characteristics

BUZ 325

Abstract: BUZ45
Contextual Info: Standard Power MOSFETs BUZ 45 B File Number 2259 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 500 V rD S on = 0.5 n N -C H A N N E L E N H A N C E M E N T M O D E Features: • SO A is power-dissipation limited m Nanosecond switching speeds

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

55A400

Abstract: BUZ60
Contextual Info: Standard Power MOSFETs File Number BUZ 60 2260 N-Channel Enhancement-Mode Power Field-Effect Transistors 5 .5 A , 4 0 0 V N-CHANNEL ENHANCEMENT MODE fDSioni - 1 .0 f î Features: • SOA is pow er-dissipation lim ite d ■ N anosecond sw itching speeds ■ Linear transfer characteristics

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

buz 90 af

Abstract: TL 2262 IC 2262 AF BUZ 72 A 2262 af tl 2262 am BUZ72
Contextual Info: Standard Power MOSFETs BUZ 72 A File N u m b e r 2262 N-Channel Enhancement-Mode Power Field-Effect Transistors 9 A, 100 V TDSIon = 0.25 D. N-CHANNEL ENHANCEMENT MODE Features: • SOA is pow er-dissipation lim ited a N anosecond s w itching speeds m Linear transfer characteristics

Contextual Info: CY8CMBR3002, CY8CMBR3102 CY8CMBR3106S, CY8CMBR3108 CY8CMBR3110, CY8CMBR3116 Datasheet CapSense Express Controllers With SmartSense™ Auto-tuning 16 Buttons, 2 Sliders, Proximity Sensors CapSense Express 16 Button Controller General Description The CY8CMBR3xxx CapSense® Express™ controllers enable advanced, yet easy-to-implement, capacitive touch sensing user

BUZ20

Contextual Info: Standard Power MOSFETs BUZ20 File Number 2254 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 100 V = 0.2 Q N-CHANNEL ENHANCEMENT MODE fD S I o n Features: • SOA is pow er-dissipation lim ite d ■ N anosecond s w itching speeds a Linear transfer characteristics

Contextual Info: CY8CMBR3002, CY8CMBR3102 PRELIMINARY CY8CMBR3106S, CY8CMBR3108 CY8CMBR3110, CY8CMBR3116 Datasheet CapSense Express Controllers With SmartSense™ Auto-tuning 16 Buttons, 2 Sliders, Proximity Sensors CapSense Express 16 Button Controller General Description

buz 11 bv

Contextual Info: BUZ11 23 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T 0 -2 2 0 A B • 30 A , 50 V T O P V IE W • rD S on = 0 .0 4 n • S O A is P ow er-D issip atio n Lim ited DRAIN (FLANGE) • N anosecond S w itching S peeds

Contextual Info: CY8CMBR3002, CY8CMBR3102 CY8CMBR3106S, CY8CMBR3108 CY8CMBR3110, CY8CMBR3116 PRELIMINARY CapSense Express Controllers With SmartSense™ Auto-tuning 16 Buttons, 2 Sliders, Proximity Sensors CapSense Express 16 Button Controller General Description The CY8CMBR3xxx CapSense® Express™ controllers enable advanced, yet easy-to-implement, capacitive touch sensing user

Contextual Info: 3 7E SEMELAB LTD D Ô1331Ô7 0 0 Q DE 4 7 3 • SflLB ' SEMELAB BUZ 32 MECHANICAL DATA MOS POWER D im e n s io n s in m m N-Channel Enhancement Mode u_'0-3_ r max. + I '*|3 .6 k - 1.3 A.5max. r- 5 .9 min. APPLICATIONS 5.I 15.8 noa x . m L |. 1 • DC/DC CONVERTERS

BUZ45

Contextual Info: Standard Power MOSFETs File No. 2257 BUZ 45 N-Channel Enhancement-Mode Power Field-Effect Transistors 9.6 A, 500 V N -CH A N N EL E N H A N C EM EN T M ODE rosioni = 0 .6 O Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds

hwin

Abstract: "FRC" sony 5.1 amplifier circuit
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD784927 16-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The µPD784927 is a member of the NEC 78K/IV Series of microcontrollers equipped with a high-speed 16-bit CPU for VCR software servo control. The µPD784927 contains many peripheral hardware units ideal for VCR control, such as a multi-function timer unit

9 BITS VIDEO CAPTURE CARD

Abstract: BL. SUPER SERVO MOTOR P5 BUZ 215 diagram uPD784927 uPD784927Y uPD784928 uPD78F4928Y 1.0A making code uPD78148
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD784927Y 16-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The µPD784927Y is based on the µPD784927 with I2C bus control functions appended and are for VCR software servo control. The µPD784927Y contains many peripheral hardware units ideal for VCR control, such as a multi-function timer

92CS-39526

Contextual Info: Standard Power MOSFETs B U Z 60B File N um b er 2261 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.5 A, 400 V Tostonl = 1.5 Q N-CHANNEL ENHANCEMENT MODE Features: • SOA is pow er-dissipation lim ite d m N anosecond sw itching speeds m Linear transfer characteristics