BUV 71 Search Results

B45A

Abstract: AEG motor buv 71 aeg d 188 aeg d 188 s 1000 aeg t 188
Contextual Info: A E G CORP □02142^ QDCH571 4 17E D BUV 71 TIlI3J^FE£&sSI30 e le c tro n ic Crearve Technologies •p -*V J 3 Silicon NPN Power Transistors Applications: Motor controls, switching mode power supplies Features: • Implantation High reverse voltage • Triple diffusion

DL802

Contextual Info: Conventional Rectifier Power Transformers • Chassis Mount BUv direct Signal’s Rectifier Power transformers provide a wide variety of outputs. This series of conservatively designed transformers are manufactured using traditional materials and layer wound techniques.

BUV18

Abstract: transistor buv 90 transistor buv transistor TL 431 g BUV19 BUV18-BUV19 buv18buv19 BUV10 iv-18 transistor SE 431
Contextual Info: _71B,ï2 3 7 S G S T H QPEÔt.711 7 • ' T ' 3 ' S - I S O M S O N B U V 1 8 ’H [ i O T « g S S G S-THOMSON B U V 1 9 3QE D NPN HIGH CURRENT SWITCHING TRANSISTORS ■ HIGH EFFICIENCY SWITCHING ■ VERY LOW SATURATION VOLTAGE AT 40A ■ FAST TURN-OFF AND TURN-ON

Contextual Info: NCP1612 Enhanced, High-Efficiency Power Factor Controller The NCP1612 is designed to drive PFC boost stages based on an innovative Current Controlled Frequency Fold-back CCFF method. In this mode, the circuit classically operates in Critical conduction

BUD48

Abstract: BUD48DI BUD 48 BUX23 BUV41 BUV40 BUW38 BUW52 bux348 TR MJE 350
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL M0 glJ3 ILdOT©[ l(SS POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)

ncp1612

Abstract: BUV 460 C
Contextual Info: NCP1612 Enhanced, High-Efficiency Power Factor Controller The NCP1612 is designed to drive PFC boost stages based on an innovative Current Controlled Frequency Fold−back CCFF method. In this mode, the circuit classically operates in Critical conduction Mode (CrM) when the inductor current exceeds a

Contextual Info: NCP1612 Enhanced, High-Efficiency Power Factor Controller The NCP1612 is designed to drive PFC boost stages based on an innovative Current Controlled Frequency Fold−back CCFF method. In this mode, the circuit classically operates in Critical conduction Mode (CrM) when the inductor current exceeds a

BUD48DI

Abstract: BUD48 BUV41 BUX 115 BUV18 BUD 48 D44Q5 BUW38 BUV26 BUV40
Contextual Info: SGS-THOMSON M0 glJ3 ILdOT©[ l(SS GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)

NCP161

Abstract: NCP1615
Contextual Info: NCP1615 High Voltage High Efficiency Power Factor Correction Controller The NCP1615 is a high voltage PFC controller designed to drive PFC boost stages based on an innovative Current Controlled Frequency Foldback CCFF method. In this mode, the circuit operates in critical conduction mode (CrM) when the inductor current

NCP161

Contextual Info: NCP1612 Enhanced, High-Efficiency Power Factor Controller The NCP1612 is designed to drive PFC boost stages based on an innovative Current Controlled Frequency Fold-back CCFF method. In this mode, the circuit classically operates in Critical conduction

BUV 460 C

Contextual Info: NCP1612 Enhanced, High-Efficiency Power Factor Controller The NCP1612 is designed to drive PFC boost stages based on an innovative Current Controlled Frequency Fold−back CCFF method. In this mode, the circuit classically operates in Critical conduction Mode (CrM) when the inductor current exceeds a

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

BUV18

Abstract: transistor buv 90 BUV19 transistor buv BUV18-BUV19
Contextual Info: •_?52T237 QD2Ô>71J? 'T '3 'S - I S SGS -THOMSON S G S-THOMSON BUV18 BUV19 3QE » NPN HIGH CURRENT SWITCHING TRANSISTORS HIGH EFFICIENCY SWITCHING VERY LOW SATURATION VOLTAGE AT 40A FAST TURN-OFF AND TURN-ON DESC RIPTIO N High current, high speed transistors suited for low

NCP1615

Contextual Info: NCP1615 High Voltage High Efficiency Power Factor Correction Controller The NCP1615 is a high voltage PFC controller designed to drive PFC boost stages based on an innovative Current Controlled Frequency Foldback CCFF method. In this mode, the circuit operates in critical conduction mode (CrM) when the inductor current

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

407D

Abstract: BU 508D BU206 transistors bu 407 bu 1350 508D BU207 BU 526 BU326 BU208
Contextual Info: h teSAGriBB POWER TRANSISTORS Switching transistors for horizontal deflection and television switch-mode power supply Type VcBO V VcEO (V) lc (A) Ptot VcEsat (W ) (V) tf at lc (MS) (A) Case JEDEC BU 126 750 300 3,0 40 <5.0 <0.7 4.0 BU 204 BU 205 BU 206 1300

BUV71

Abstract: A 2712 FC10A telefunken ta 750 a2712 PSA-25 BUV71 telefunken
Contextual Info: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage

TRANSISTOR BI 187

Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126
Contextual Info: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage

Contextual Info: 7^2^237 QOSTHCn T • S G S -T H O M S O N KLUOTT^OlDOi S G S-TH0MSÔN 3 3 “ l> 2N6544 2N6545 _ 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The 2N6544 and 2N6545 are multiepitaxial mesa NPN transistors in Jedec TO-3 metal case. They are intended for high voltage, fast switching applica­

J100

Abstract: TDA9170 TDA9176
Contextual Info: INTEGRATED CIRCUITS \ s y iiT TDA9176 Luminance Transient Improvement LTI IC Preliminary specification File under Integrated Circuits, IC02 Philips Sem iconductors 711 0 A2 L 000^4?^ 1995 Jun 13 PHILIPS 405 This Material Copyrighted By Its Respective Manufacturer

marking code BBH

Abstract: st marking BBM code st smd diode marking code SMD circuits MARKING CODE AA smd code marking 333 SMBJ8.5CA marking code BUH Marking Code SMD bbz ae SMC MARKING SMD CODE BUQ
Contextual Info: DIODES,SMD,Transient Voltage Suppression EMC, FILTERS & SUPPRESSION An extensive range of unidirectional and bidirectional transient voltage suppressors offering a high energy absorption capability ranging from 400W up to 1500W. Available in surface mount or through hole packages. Designed to protect voltage sensitive components, these

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

TDA9170

Abstract: TDA9176
Contextual Info: Preliminary specification Philips Semiconductors Luminance Transient Improvement LTI 1C TDA9176 FEATURES GENERAL DESCRIPTION • Luminance transient improvement The TDA9176 is a Luminance Transient Improvement (LTI) IC which is suitable for operation in both