BUT1 Search Results

by205

Abstract: BY205-400 diode by205 2n2222 transistor pin b c e by205 diode BUT11 D44H11 2N2222 2N2904 D45H11
Contextual Info: BUT11 NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA

BUT11F

Abstract: DSA002309 silicon transistor npn 395 BUT11
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11F • DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS Ta=25℃

BUT18AF

Abstract: BUT18F BUT18
Contextual Info: SavantIC Semiconductor Product Specification BUT18F BUT18AF Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION

d 42030 transistor

Abstract: AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A

BUT18

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUT18; BUT18A Silicon diffused power transistors Product specification Supersedes data of 1997 Aug 13 1999 Jun 11 Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A DESCRIPTION High-voltage, high-speed,

BUT11A1

Abstract: BUT-11 BUT11A CIRCUIT BUT11 BUT11A
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage

BUT11AF

Abstract: 150v power diode
Contextual Info: BUT11AF SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. TO-220F QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BUT11A Features Lead Free Finish/RoHS Compliant Note1 ("P" Suffix designates • • • • • • NPN Silicon

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BUT11A Features • • • • High voltage, high speed NPN power transistors. With TO-220 package Intended for use in converters, inverters, switching regulators, motor

BUT12AX

Abstract: BUT12
Contextual Info: BUT12AX Silicon diffused power transistor Rev. 01 — 16 June 2004 Product data M3D308 1. Product profile 1.1 Description High voltage, high speed, NPN power transistor in a plastic package. 1.2 Features • Isolated package ■ Fast switching. 1.3 Applications

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BUT11A Features • • • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates RoHS Compliant. See ordering information)

Contextual Info: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse)

BUT11A CIRCUIT

Abstract: BUT11
Contextual Info: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector Base Voltage Rating Unit 850 V 1000 V 400 V VcES : BUT11 Collector Emitter Voltage Emitter Base Voltage : B UT11A : BUT11

BUT12

Contextual Info: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol : BUT12 Rating Unit 850 V 1000 V 400 V VCES : B UT12A Collector Emitter Voltage : BUT12 VcEO : B UT12A 450 V

Contextual Info: N AI1ER PHILIPS/DISCRETE bTE J> 1,1,53=531 DAT JJ 002fi42b U BUT12F BUT12AF L SILICON DIFFUSED POWER TRAN SISTO RS High-voltage, high-speed, glass-passivated npn power transistors in a S O T 186 envelope intended for use in converters, inverters, switching regulators, motor control systems, etc.

Contextual Info: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION

18AF

Abstract: BUT18AF BUT18F UT18 BUT18
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE T> m 0020441 3Tb I IAPX BUT18F BUT18AF SILICO N D IFFU SED PO W ER T R A N SISTO R S High-voltage, high-speed, glass-passivated npn power transistors in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators, motor control

BUT13

Abstract: BUT13P I3315 5607 transistor BUT13PFI BUT13P equivalent lb 385 IC circuit diagram
Contextual Info: / = T ^ 7# S G S -T H O M S O N M ^ gm [EC T[H «n(gS S G B U T 1 3 / 1 3 P /1 3 P F I S - T HO MS ON 3QE D HIGH VOLTAGE POWER SWITCH • HIGH POWER ■ INTEGRATED SPEED-UP DIODE IN TER N A L S C H EM A TIC DIAG RAM DESC RIPTIO N The BUT13 , BUT13P and BUT13PFI are silicon

Contextual Info: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION

TRANSISTOR 3360

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT11AF Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use In line operated switching power supplies in a w ide range of end use applications. This device com bines the latest state of the art

SO402DH

Abstract: SO402MH scr battery charger SO402 BU801 scr so402mh ICC01 tip50 darlington high voltage darlington TYN425
Contextual Info: IGNITION RECOMMENDED DEVICES HOME HEATING SCOOTERS Type TIP50 TIP54 BUT11A FLC02 Function High Voltage TR in TO-220 High Voltage TR in TO-218 High Voltage TR in TO-220 ASD Fuel Ignitor Control in SOT-82/SOT-194 LAWNMOWER Type BU801 BU900TP ICC03 ICC01 Function

11AF

Abstract: BUT11AF BUT11F
Contextual Info: Preliminary BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850

by205

Abstract: BUT11 BY205-400 2N2222 2N2904 D44H11 D45H11 transistor d44h11
Contextual Info: BUT11 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current MAY 1989 - REVISED MARCH 1997 TO-220 PACKAGE TOP VIEW

BUT12

Abstract: BUT12A
Contextual Info: DISCRETE SEMICONDUCTORS BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 PHILIPS Philips S em ico n d u cto rs Printed from www.freetradezone.com, a service of Partminer,