BUT 11 TRANSISTOR Search Results

MARK aabs SOT23-6

Abstract: MAX5434 AABV MAX5435
Contextual Info: 19-3511; Rev 0; 11/04 32-Tap, Nonvolatile, I2C, Linear, Digital Potentiometers The MAX5432–MAX5435 nonvolatile, linear-taper, digital potentiometers perform the function of a mechanical potentiometer, but replace the mechanics with a simple 2-wire serial interface. Each device performs the same

MAX5435

Contextual Info: 19-3511; Rev 3; 11/07 KIT ATION EVALU LE B A IL A AV 32-Tap, Nonvolatile, I2C, Linear, Digital Potentiometers The MAX5432–MAX5435 nonvolatile, linear-taper, digital potentiometers perform the function of a mechanical potentiometer, but replace the mechanics with a simple

DC Power supply FMEA

Contextual Info: Order this document by MC33143/D ^ M O T O R O L A 11" MC33143 Advance Information Dual High-Side Switch The MC33143 is a dual high-side switch designed for solenoid control in harsh automotive applications, but is well suited for other environments. The

100PF

Abstract: 20-PIN MC33385
Contextual Info: Freescale Semiconductor Technical Data Document Number: MC33385 Rev. 6.0, 11/2006 Quad Low-side Driver 33385 The MC33385 is a Quad Low-side Driver fully protected switch. This device is a general purpose Low-side Driver but has been especially designed to operate in engine management applications as injector

Contextual Info: Freescale Semiconductor Technical Data Document Number: MC33385 Rev. 6.0, 11/2006 Quad Low-side Driver 33385 The MC33385 is a Quad Low-side Driver fully protected switch. This device is a general purpose Low-side Driver but has been especially designed to operate in engine management applications as injector

D2SB 73

Contextual Info: 256 x 36 x 2 /512 x 36 x 2 BiFIFOs FEATURES FUNCTIONAL DESCRIPTION • Fast Cycle Times: 15/20/25/30/35 ns The LH543601/11 contain two FIFO buffers, FIFO #1 and FIFO #2. These operate in parallel, but in opposite directions, for bidirectional data buffering. FIFO #1 and

MAX4172

Contextual Info: AMPLIFIER AND COMPARATOR CIRCUITS Application Note 2011: May 11, 2003 High-Side Positive Current Sensor Monitors Negative Supply All dedicated current-sense amplifiers are designed for high-side sensing on a positive supply, but you can adapt them to monitor a negative supply Figure 1 . The positive supply pin (V+) connects to the system's

BUT18

Abstract: BUT18A TO-22QAB
Contextual Info: P hilips S em ico n d uctors Product sp ecification Silicon diffused power transistors BUT18; BUT18A D ES C R IPTIO N H igh-voltage, high-speed, glass-passivated NPN pow er tra nsisto r in a T O -220A B package. o A P P LIC A TIO N S 2 • C onverters • Inverters

BUD48DI

Abstract: BUD48 BUV41 BUX 115 BUV18 BUD 48 D44Q5 BUW38 BUV26 BUV40
Contextual Info: SGS-THOMSON M0 glJ3 ILdOT©[ l(SS GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)

BUD48

Abstract: BUD48DI BUD 48 BUX23 BUV41 BUV40 BUW38 BUW52 bux348 TR MJE 350
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL M0 glJ3 ILdOT©[ l(SS POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)

4 phase stepper motor

Abstract: 12v transformer fx3311 FMMT618 ir remote control transmitter BCP54, BCX54 FMMT619 zetex product BCX54 LL5818
Contextual Info: Application Note 11 Issue 2 October 1995 Features and Applications of the FMMT618 and 619 High Current SOT23 replaces SOT89, SOT223 and D-PAK David Bradbury Switch 6A loads using a SOT23 transistor? Zetex has developed this new range to meet ever increasing demands for

AEG T 25 N 1000

Abstract: ps2ms QS 100 NPN Transistor S100 NPN Transistor BYV16 MS 3894 N BUT54
Contextual Info: A E G CORP 17E D QQSTMSta OGQTSSl Q BUT 54 electronic r - 33-13 C^atN«Tech«j*os'es Silicon NPN Power Transistor A p p lic a tio n : Sw itching mode power supply, electronic ballast Features: • In multi diffusion technique Short sw itching tim e • Glass passivation

GRM188R60J106ME47

Abstract: 37Z6 FR408
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

8050 TRANSISTOR

Abstract: NPN transistor 8050
Contextual Info: HT16550 22 Second Music Voice Features • • • • • • • • • Operating voltage: 2.4V~5.0V Directly driving an external transistor Low stand-by current 1µA Typ. for VDD=3V Minimum external components 509 notes (Max.) for table ROM Programmable silence length (0~4 secs) and

LL1608-FSL12N0S

Abstract: LL1608-FSL8N2JL RC0402JR-07331RL LL1608-FSL18N0S Coilcraft Design Tools GRM1555C1H471JA01 MMZ09312B TOKO TOKO TOKO TOKO 04023J10R0BBSTR LL1608-FSL1N2S
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 0, 11/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMZ09312BT1 High Efficiency/Linearity Amplifier The MMZ09312B is a 2 - stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA25312B Rev. 0, 9/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA25312BT1 High Efficiency/Linearity Amplifier The MMA25312B is a high efficiency InGaP HBT amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and

TBA820M equivalent

Abstract: L298 and unipolar stepper motor control motors l297 l298 lm339 pwm speed motor L297 application note l297 l298 dc motor driver using L298 generator dynamo l298 dc MOTOR L298n
Contextual Info: APPLICATION NOTE APPLICATIONS OF MONOLITHIC BRIDGE DRIVERS High power monolithic bridge drivers are an attractive replacement for discrete transistors and half bridges in applications such as DC motor and stepper motor driving. This application guide describes three such devices - the L293, L293E and L298 - and presents practical examples of their application.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 1, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMZ09312BT1 High Efficiency/Linearity Amplifier The MMZ09312B is a 2 - stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

MMZ09312B

Abstract: GRM1555C1H101JA01 AVX Manufacture Label
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 1, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMZ09312BT1 High Efficiency/Linearity Amplifier The MMZ09312B is a 2 - stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

clap switch

Abstract: 10 band LED sound level indicator HT3010 ht3010a drum sound ic snare drum sound ic rhythm IC drum drum ic tango
Contextual Info: HT3010 Rhythm Generator Features • • • • • • • Operating voltage: 2.4V~5.0V Directly driving an external transistor Low standby current 1µA for VDD=3V Minimal external components required Programmable playing function – Manual – Auto Demo function

BUT93

Abstract: BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11
Contextual Info: A E G CORP 17E D 002=142^ G QCHSBI fi BUT 93 •BHILIIFmiMKiliia electronic Creative Technologies r-2 3 -il Silicon NPN Power Transistor A p p lic a tio n : Switching mode power supply, electronic ballast Features: • In m ulti diffusion technique • Short sw itching tim e

EN2803

Contextual Info: Ordering number:EN2803 NPN Epitaxial Planar Silicon Transistor 2SD2028 Low-Frequency Power Amplifier Applications Features Package Dimensions • With Zener diode 11±3V between collector and base. · Large current capacity. · Low collector-to-emitter saturation voltage.

EN2803

Abstract: 2SD2028
Contextual Info: Ordering number:EN2803 NPN Epitaxial Planar Silicon Transistor 2SD2028 Low-Frequency Power Amplifier Applications Features Package Dimensions • With Zener diode 11±3V between collector and base. · Large current capacity. · Low collector-to-emitter saturation voltage.