BUP30 Search Results

IKW08T120

Abstract: BUP305D
Contextual Info: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D Short circuit withstand time – 10µs

Contextual Info: IGW08T120 q TrenchStop Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply

RG81

Abstract: IGW08T120 BUP305D
Contextual Info: IGW08T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • C Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : G E - Frequency Converters - Uninterrupted Power Supply

k08T120

Contextual Info: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C •           Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D

IGW08T120

Abstract: BUP305D BUP305-D mj04
Contextual Info: Preliminary IGW08T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply

IGBT K 40 T 1202

Abstract: 40 t 1202 igbt BUP306D
Contextual Info: SIEMENS BUP306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 306D VCE h 1200V 23A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code

BUP305D

Abstract: IKW08T120
Contextual Info: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D Short circuit withstand time – 10µs

integrated circuit MAR 521

Contextual Info: Preliminary IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • C • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D Short circuit withstand time – 10µs

k08t120

Abstract: BUP30 k08t12
Contextual Info: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D

Contextual Info: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D

Contextual Info: IGW08T120 q TrenchStop Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply

BUP30

Abstract: LE17
Contextual Info: _fi_ 37E SEMELAB L T» 0133167 D SEMELAB r-. [j ; SMtß ' /y s r - BUP30 SILICO N NPN MECHANICAL DATA EPITAXIAL PLANAR Dimensions in mm FEATURES • VERY LOW Vce SAT • HIGH GAIN AT HIGH CURRENT • VERY FAST SWITCHING • PNP COMPLEMENT BUP 31

k08T120

Abstract: IKW08T120 BUP305D PG-TO-247-3 diode of 5a 5v 10kHz RG81 mj04
Contextual Info: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D

Contextual Info: Preliminary IGW08T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply

k08T120

Abstract: 5M MARKING CODE DIODE 5A 100V IKW08T120 BUP305D PG-TO-247-3-21
Contextual Info: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D

BUP314

Abstract: BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Michael Herfurth ● Michael Schmitt High-speed IGBTs: Fast switching at an attractive price Developed from secondgeneration IGBTs, highspeed IGBTs insulated gate bipolar transistors are particularly economical for

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

BUL52A

Abstract: SOT93 BUP43 BUP47 BUP49 BUP53 dd453 BUL50A BUL50B BUL51A
Contextual Info: 4AE D • fll331fl7 0DDD4S3 IDA ■ SMLB SEMELAB LTD T-Z?-o BI-POLAR TRANSISTORS (CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code HR HR HR HR HR HR HR HR HR HR HR HR UR HR CECC CECC CECC REQ REQ HR HR HR HR CECC CECC CECC CECC Pol NPN NPN NPN NPN NPN

TRANSISTOR JC

Abstract: 748 transistor on transistor 304 transistor 307 bup304 bup transistor bup 200 transistor
Contextual Info: SIEMENS IGBT Transistors • • • • • • • • • BUP 304 N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode

2kW flyback PFC

Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
Contextual Info: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg

BUP309

Abstract: siemens igbt
Contextual Info: SIEMENS BUP 309 IGBT Preliminary data • High switching speed • Low tail current • Latch-up free • Avalanche rated • Low forward voltage drop Remark: The TO-218 AB case doesn't solve the standards VDE 0110 and UL 508 for creeping distance Pin 1 Pin 2

BUP30

Abstract: BUP31 A31M LE17 IHM planar
Contextual Info: SEMELAB LTD 37E » 0133107 SEM ELAB IH M vy s 1 s m <3 BUP31 NEW PRODUCT S IL IC O N PNP MECHANICAL DATA EPITAXIAL PLANAR . 1 0 .3_ max. 3.6 2.8 ¥ 1.3 ¿.5max. r-F 5.9 min. ¡.i 15.8 max. 10 FEATURES i • Very low V ce sat • High gain at high current • Very fast switching

Contextual Info: SIEMENS BUP 307D IGBT W ith Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed 1 • Low tail current VPT05156 2 3 • Latch-up free • Including fast free-wheel diode Type BUP 307D »'CE h 1200V 35A Pin 1 Pin 2 Pin 3