BUN DIODE Search Results

Contextual Info: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A- - -B-C BuPEuP BvPEvP BwPEwP it tl- 1+ +1- 1+ + Tr E LJ: BuN EuN S - DIA. 2 TYP. BvN EvN D BwN EwN Description: -I- ä EuP« (BuN) I T GuNo— IGvN«— I (BwP) I GwPo— I

BUN DIODE

Contextual Info: m u m ex Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 |- U BuP EuP U BvP EvP D 8wP EwP l ;-G 4 o O n n 0 4 n n - m S - DIA— (2 TYP.) BuN BuN E EuN i—i BvN EvN r—I — K- CM20TF-24H SÍX-IGBT IGBTMOD H-Series Module

CM30TF-24H

Abstract: igbt 600V 30A
Contextual Info: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R L K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

BUN DIODE

Abstract: DIODE EVP 28 CM50TF-12H bup transistor
Contextual Info: CM50TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/600 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M BwN EwN F R F R K R

IGBT. CM50TF-12H

Abstract: CM50TF-12H
Contextual Info: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

Contextual Info: # w m s CM30TF-12H r Powerex, Inc., 200Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 S¡X~IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts BuP EuP BvP EvP BwP EwP 50 4 0 ^ 0 4 r -1 S - DIA— (2 TYP.) BuN EuN i - i B w N E vN r-i — K— — H-

CM50TF-12H

Contextual Info: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

600v 30a IGBT

Abstract: CM30TF-24H IGBT 1200V 60A
Contextual Info: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R L K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

BUN DIODE

Abstract: 600v 20a IGBT igbt 600v 20a CM20TF-24H
Contextual Info: CM20TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 20 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E

BUN DIODE

Abstract: 400v 15A transistor module DIODE EVP 25 400v 15A igbt module 600v 30a IGBT CM15TF-24H
Contextual Info: CM15TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 15 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E

BUN DIODE

Abstract: BUP 304 600v 30a IGBT BUP 300 CM30 bup 304 equivalent bup 77 CM30TF-12H H bridge 300v 30a 12A1000
Contextual Info: CM30TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E

600v 30a IGBT

Abstract: BUN DIODE CIRCUIT DIAGRAM UPS welding circuit diagram CM30TF-24H DIODE EVP 25 igbt 30A
Contextual Info: CM30TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/1200 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M F R BwN EwN F R L K

P7524

Abstract: MP7524JN
Contextual Info: MP7524 CMOS B uffered M ultiplying 8-B it D ig ital-to -A n alo g C o n v e rte r FEATURES APPLICATIONS • • • • • • • • • • Full Four-Quadrant Multiplication On-chip Bus Interface Logic +5 V to +15 V Operation Low Power Consumption Monotonicity Guranteed

Contextual Info: MP7633 15 V CMOS 10-Bit Multiplying Digital-to-Analog Converter vjm m m rm FEATURES • • • • • • • • • • Full Four-Quadrant Multiplying DAC Guaranteed Monotonic over Temperature Non-Linearity: +1/2 LSB Achieved without Trimming Ultra Stable: 0.2 ppm/°C Max Linearity Tempco

7633

Contextual Info: MP7633 15 V CMOS 10-Bit Multiplying Digitai-to-Analog Converter JE* EX4R FEATURES • Full Four-Quadrant Multiplying DAC • Latch-Up Free • G uaranteed Monotonic over Temperature • Improved Replacement for AD7533, AD7520 • Low Cost • Non-Linearity: ± 1 /2 LSB Achieved without Trimming

BUN DIODE

Abstract: E80276 QM15TD-HB all transistor QM15t DIODE EVP 28
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM15TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM15TD-HB • • • • • IC Collector current . 15A VCEX Collector-emitter voltage . 600V hFE DC current gain. 250

MP7523JN

Abstract: D7523 mp7524 hp5082 MP7523 MP7523JS MP7523KN MP7523KS XRD7523AID-J 18soic
Contextual Info: MP7523/XRD7523 IB T E X A R 15 V CMOS Multiplying 8-Bit Digital-to-Analog Converter .the analog plus com pany January 1996-2 FEATURES • • • • • • • APPLICATIONS Full Four-Quadrant Multiplying Low Feedthrough: 1/2 LSB @ 200 kHz Fast Settling: 100ns typ.

Contextual Info: MP7614 M. CM OS Multiplying 14-Bit Digital-to-Analog Converter Micro Power Systems J B B i M M M M W i S m tm m m m m « I « ¡ i t i l i i l l i : FEATURES • • • • • • • • • Monolithic CMOS Construction No Laser Trimming Full Four-Quadrant Multiplication

qf30aa60

Abstract: QF30AA40 IC 7403
Contextual Info: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF30AA40/60 QF30AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

Contextual Info: MP7524 CM OS Buffered Multiplying 8-Bit Digital-to-Analog Converter Ä Micro Power Systems FEATURES APPLICATIONS • • • • • • • • • • Full Four-Quadrant Multiplication On-chip Bus Interface Logic +5 V to +15 V Operation Low Power Consumption

P7524

Contextual Info: MICRO POWER S Y S T E M S INC blE ]> • bü^MMM GGQim? Ô 10 ■ MPS T-si - m $ MP7524 CMOS Buffered Multiplying 8-Bit Digital-to-Analog Converter M Micro Power Systems FEATURES APPLICATIONS • • • • • • • • • • Full Four-Quadrant Multiplication

IC 7403

Abstract: QF50AA40 QF50AA60 transistor bw 51
Contextual Info: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF50AA40/60 QF50AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

bvp DIODE

Abstract: 30-HV CM15TF-24H 7294b21 BWP 34
Contextual Info: m N BG X CM15TF-24H Powarex, inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SiXm /GBT IGBTMOD H-Series Module 15 Amperes/1200 Volts - O 8oP EuP D D BvP EvP BwP EwP S - DIA— (2 TYP.) I I e d -N — H ff TM L Description: Powerex IGBTMOD™ Modules are

op amp virtual ground

Abstract: MP7542 MP7543 MP7543AD MP7543BD MP7543JN MP7543JP MP7543JS MP7543KN MP7543KP
Contextual Info: MP7543 ÎC'EXdR 5 V CMOS Serial Input 12-Bit Digital-to-Analog Converter FEATURES BENEFITS • • • • • • • • • • • • Compatible with Serial Addressing Systems 12-Bit DAC with Serial Digital Input Interface Nonlinearity +1/2 LSB from Tmin to Tmax