BUL7 Search Results

BUL791

Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric

BUL7216

Abstract: JESD97
Contextual Info: BUL7216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Features • HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED Applications ■ 1 ELECTRONIC BALLASTS FOR

semefab 051

Abstract: semefab 051 mhz LCC4 BUL72B
Contextual Info: SEME BUL72B - LCC4 LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 9.14 0.360 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300)

BUL742A

Contextual Info: BUL742A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS FOUR LAMP ELECTRONIC BALLAST FOR: 120 V MAINS IN PUSH-PULL

Contextual Info: BUL743 High voltage fast-switching NPN power transistor Preliminary Data Features • Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed 3 Applications 1 ■ Electronic ballast for fluorescent lighting up to

Contextual Info: SEME BUL76A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85

BUL770

Contextual Info: BUL770 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ●

BUL7216

Abstract: BULB7216 BULB7216-1 BULB7216T4 JESD97
Contextual Info: BULB7216 BUL7216 High voltage fast-switching NPN power transistor Features • Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed 1 I2PAK TO-220 Applications ■ 3

Contextual Info: INI = ^ = M il SEME BUL74B LAB MECHANICAL DATA Dimensions in mm 10.2 4.5 1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE

BUL741

Abstract: JESD97
Contextual Info: BUL741 High voltage fast-switching NPN Power Transistor General features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ In compliance with the 2002/93/EC European

Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR Designed Specifically for High Frequency Electronic Ballasts up to 125 W hFE 6 to 22 at VCE = 1 V, IC = 2 A Low Power Losses On-state and Switching Key Parameters Characterised at High Temperature Tight and Reproducible Parametric

BUL742C

Contextual Info: BUL742C HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BUL742C • ■ ■ ■ Marking BUL742C Package / Shipment TO-220 / Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED

Contextual Info: BUL743 High voltage fast-switching NPN power transistor Preliminary Data Features • Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed 3 Applications 1 ■ Electronic ballast for fluorescent lighting up to

Contextual Info: SEME BUL76B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85

semefab 051

Abstract: semefab 051 mhz
Contextual Info: S EM E BUL72B - LCC4 LA B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 9.14 0.360 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300)

Contextual Info: SEME BUL72B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 0.32 0.24 0.10 0.02 16° max. 13° Designed for use in electronic ballast applications 1.70 max. 10° max. 6.7 6.3 3.1 2.9

BUL76A

Contextual Info: SEME BUL76A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85

BUL76B

Contextual Info: SEME BUL76B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85

BULB742CT4

Contextual Info: BUL742C BULB742C High voltage fast-switching NPN power transistor Features TAB • Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed 1 2 1 TO-220FP TO-220 TAB Applications

BUL791

Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High

Contextual Info: INI = ^ = Mil SEME BUL76B LAB MECHANICAL DATA Dimensions in mm 10.2 4.5 1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3 .6 D ia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE

Contextual Info: INI = ^ = M il SEME BUL74A LAB MECHANICAL DATA Dimensions in mm 10.2 4.5 1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3 .6 D ia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE

LPR400

Abstract: CT711
Contextual Info: BUL705 High voltage fast-switching NPN Power Transistor General features • NPN Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Fully characterized at 125 °C

BUL770

Contextual Info: BUL770 NPN SILICON POWER TRANSISTOR C o p y rig h t 1997, Power Innovations Limited, UK • Designed Specifically for High Frequency Electronic Ballasts up to 50 W • hFE 7 to 21 at VCE = 1 V, lc = 800 mA • Low Power Losses On-state and Switching •