BUFFER AMPLIFIER 8 GHZ Search Results

HMC311ST89

Contextual Info: HMC311ST89 v00.0204 MICROWAVE CORPORATION InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC311ST89 is an ideal RF/IF gain block or LO buffer amplifier for: P1dB Output Power: +15.5 dBm • Cellular / PCS / 3G

HMC311LP3

Contextual Info: MICROWAVE CORPORATION HMC311LP3 v01.0604 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC311LP3 is an ideal RF/IF gain block or LO buffer amplifier for: P1dB Output Power: +15.5 dBm • Cellular / PCS / 3G

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ iP C 2 7 0 8 T 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2708T is a silicon monolithic integrated circuits designed as buffer amplifier for BS/CS tuners. This 1C is packaged in minimold package.

HMC320MS8G

Contextual Info: HMC320MS8G v00.0900 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER , 5.0 - 6.0 GHz 8 Typical Applications Features The HMC320MS8G is ideal for: Selectable Functionality: LNA, Driver, or LO Buffer Amp AMPLIFIERS - SMT • UNII Adjustable Input IP3 Up to +10 dBm

ITT373502D

Contextual Info: X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die ITT373502D FEATURES • • • ADVANCED INFORMATION Phase Shifter /Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process RF Out RF In

phase shifter

Abstract: ITT373503D
Contextual Info: X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die - High Dynamic Range ITT373503D Features • • • ADVANCED INFORMATION Phase Shifter /Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process

ITT373501D

Abstract: digital phase shifter mhz
Contextual Info: X-Band Serial Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die ITT373501D FEATURES • • • ADVANCED INFORMATION Phase Shifter / Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process RF O ut R F In

X band 5-bit phase shifter

Abstract: MA03501D phase shifter
Contextual Info: MA03501D X-Band Serial Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die FEATURES •= •= Advanced Information Phase Shifter / Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance RF O ut R F In •= Self-Aligned MSAG MESFET Process

RFVC1800

Abstract: RFVC-1800 DS100112
Contextual Info: RFVC1800 RFVC1800 WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The

RFVC1800

Abstract: RFVC-1800
Contextual Info: RFVC1800 RFVC1800 Preliminary WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The

14TX0614

Abstract: XU1005-QD XU1005-QD-0N00 XU1005-QD-0N0T XU1005-QD-EV1
Contextual Info: 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm U1005-QD November 2006 - Rev 02-Nov-06 Features Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +11 dBm P1dB +6 dBm LO Drive Level -12 dBm LO Leakage Power General Description

X band 5-bit phase shifter

Contextual Info: MA03501 X-Band Serial Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die FEATURES • • • Preliminary Release Phase Shifter / Attenuator 8 to 11 GHz Operation 50 Ω Input and Output Impedance RF O ut R F In Self-Aligned MSAG MESFET Process

PL 15 Z EQUIVALENT

Abstract: capacitor 1c5 10C6 12C4 14TX0614
Contextual Info: 10.0-18.0 GHz GaAs MMIC Transmitter 14TX0614 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +17 dBm OIP3 +6 dBm LO Drive Level -12 dBm LO Leakage Power

Contextual Info: 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm U1005-QD June 2007 - Rev 20-Jun-07 Features Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +11 dBm P1dB +6 dBm LO Drive Level -12 dBm LO Leakage Power General Description

Contextual Info: 10.0-18.0 GHz GaAs MMIC Transmitter 14TX0614 September 2006 - Rev 20-Sep-06 Features Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +17 dBm OIP3 +6 dBm LO Drive Level -12 dBm LO Leakage Power 100% On-Wafer RF and DC Testing

TA4008F

Abstract: 961001EBA2
Contextual Info: TOSHIBA TA4008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 0 0 8 F 1.6GHz BAND BUFFER AMPLIFIER APPLICATION FEATURES • Low current l x = 9mA (Typ • Recommended operating voltage PIN ASSIGNMENT (TOP VIEW) IN GND V (x = 2.7~3.3V

10C6

Abstract: 12C4 XU1005-BD R11C7 11-C-5
Contextual Info: 10.0-18.0 GHz GaAs MMIC Transmitter U1005-BD March 2007 - Rev 01-Mar-07 Features Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +17 dBm OIP3 +6 dBm LO Drive Level -12 dBm LO Leakage Power 100% On-Wafer RF and DC Testing

Contextual Info: 10.0-18.0 GHz GaAs MMIC Transmitter U1005-BD March 2007 - Rev 01-Mar-07 Features Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +17 dBm OIP3 +6 dBm LO Drive Level -12 dBm LO Leakage Power 100% On-Wafer RF and DC Testing

marking M6s 22

Abstract: SCT-598-8-1 Q62702-M0032 CMY213 0402 inductors
Contextual Info: GaAs MMIC CMY 213 Data Sheet • • • • • Ultralinear mixer with integrated IF-amplifier and LO-Buffer for CDMA receiver applications Typical overall performance at cellular frequencies for PLO = – 5 dBm operation conditions: 3 V, 8 mA; fRF = 850 MHz; fLO = 740 MHz :

marking code 1bx

Abstract: A004R MGA-565P8 MGA-565P8-BLK MGA-565P8-TR1 MGA-565P8-TR2 MO229
Contextual Info: Agilent MGA-565P8 20 dBm Psat High Isolation Buffer Amplifier Data Sheet Features • Up to 3.5 GHz operating frequency • 2:1 VSWR input and output at 2GHz Pin 8 GND Pin 7 RFout/VD1 Pin 6 (VD2) Pin 5 (VD3) Pin 1 GND Pin 2 (RFin) • MSL-1 and lead-free

marking code 1bx

Abstract: MGA-565P8-TR1 3000 MGA-565P8-BLK MGA-565P8-TR1 MGA-565P8 MGA-565P8-TR2 MO229 mmic amplifier marking code 414
Contextual Info: Agilent MGA-565P8 20 dBm Psat High Isolation Buffer Amplifier Data Sheet Features • Up to 3.5 GHz operating frequency • 2:1 VSWR input and output at 2GHz Pin 8 GND Pin 7 RFout/VD1 Pin 6 (VD2) Pin 5 (VD3) Pin 1 GND Pin 2 (RFin) Pin 4 GND • Tape-and-reel packaging option

long range gold detector circuit diagram

Abstract: gold detector circuit RAYTHEON "Buffer Amplifier" buffer amplifier ghz thermal conductivity detector amplifier RMWB11001 high power Buffer Amplifier
Contextual Info: Raytheon Raytheon Commercial Electronics RMWB11001 11 GHz Buffer Amplifier MMIC Description The RMWB11001 is a 2-stage GaAs MMIC amplifier designed as a 10.5 to 11.7 GHz Buffer Amplifier for use in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave

2.4 GHz buffer amplifier

Abstract: RAYTHEON long range gold detector circuit diagram RMWB24001
Contextual Info: Raytheon Raytheon Commercial Electronics RMWB24001 24 GHz Buffer Amplifier MMIC Description The RMWB24001 is a 3-stage GaAs MMIC amplifier designed as a 17 to 24GHz Buffer Amplifier for use in the LO chain of point to point radios, point to multi- point communications, LMDS, and other millimeter wave

B1007-QT

Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT June 2007 - Rev 06-Jun-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure 100% RF, DC and Output Power Testing