BUA DIODE Search Results

INVERTER invertron GMI

Abstract: reliance electric invertron INVERTRON GMI Invertron Vti DBU-400 DBU-200 DBU-50 837.02.01 reliance inverter gp2000 dbu-100
Contextual Info: INVERTRON DBU Dynamic Braking Unit Instruction Manual C Manual P/N. UL R 899.05.26 User Manual: 49‘1328e 06 Publication INVDBU-UM006F-EN-P . TABLE OF CONTENTS 1. DESCRIPTION 1-1.1-2 Operation . 1-1

SMDA06

Contextual Info: TRANSZORB TVS DIODE ARRAY DA S E R IE S 8 AND 16 PIN DUAL-IN-LINE PA C K A G E DIP by David W. Hutchins Introduction Electrical Parameters The S M D A and D A family of transient voltage suppres­ sors (TVS) are designed for protection of multiple power

diode smd marking BUF

Abstract: smd diode code buh diode smd marking "BBE" diode smd marking BUE diode smd marking BBf smd code buz smb smd code buh diode smd marking "BUF" diode smd marking BUA diode smd marking "BUE"
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE DESCRIPTION The SMBJ series are TRANSILTM diodes designed

Payton

Abstract: 27C1024 1am2
Contextual Info: REVISIONS LTR DATE YR-MO-QA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE

diode smd marking BUF

Abstract: marking CODE R SMD DIODE SMB J 36 CA diode smd marking BUE diode smd marking BBE diode smd marking "BUF" smd diode code buh diode smd marking BUj diode smd marking Bva SMD CODE BUQ BUL 510
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE DESCRIPTION The SMBJ series are TRANSILTM diodesdesigned

marking code BBH

Abstract: st marking BBM code st smd diode marking code SMD circuits MARKING CODE AA smd code marking 333 SMBJ8.5CA marking code BUH Marking Code SMD bbz ae SMC MARKING SMD CODE BUQ
Contextual Info: DIODES,SMD,Transient Voltage Suppression EMC, FILTERS & SUPPRESSION An extensive range of unidirectional and bidirectional transient voltage suppressors offering a high energy absorption capability ranging from 400W up to 1500W. Available in surface mount or through hole packages. Designed to protect voltage sensitive components, these

Contextual Info: ! a i x Y S Preliminary data V CES IXSX50N60AU1 IXSX50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C

Contextual Info: TPS79718-EP, TPS79730-EP, TPS79733-EP www.ti.com SGLS348A – AUGUST 2006 – REVISED OCTOBER 2007 ULTRA LOW-POWER, 10 mA, LDO LINEAR REGULATORS WITH POWER GOOD OUTPUT FEATURES APPLICATIONS • • 1 • • • • • • • • • • • 1 Controlled Baseline

am27CI024

Contextual Info: i l AMD NOTICE OF REVISION NOR (See MIL-STD-480 f o r in s t ru c tio n s ) This re v is io n d escribed below has been au thorized fo r the document L is te d . DATE (YYHHD0) 92-09-05 Form Approved 0MB No. 0704-0188 Pu b lic rep o rtin g burden fo r t h is c o lle c t io n i s estim ated to average 1 hour per response, in clu d in g the time fo r reviewing

Contextual Info: IRF710A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 400 V ^ D S o n = 3 .6 Q lD = 2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10nA(M ax.) @ VDS = 400V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS12VS-5 HIGHSPEED SWITCHING USE ¡ FS12VS-5 • V oss . 2 5 0 V • rDS ON (MAX) . 0 . 4 0 Q

Contextual Info: IRFM110A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 100 V ^ D S o n = 0 .4 Í2 1 -5 A lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 H A (M a x .) @ V DS= 1 0 0 V

JIS Z 1522 tape

Abstract: sot-223 body marking A G Q E AN-994 IRFL210 TS10B
Contextual Info: PD-9.868 International jog Rectifier IRFL210 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 1 - 5 0

MD80C31BH

Abstract: 5962-8506401MQA 5962-8506401MQX 5962-8506402MMA MR80C31BH qml-38535 5962-8506401MXA 5962-8506403MQA mr80C31 MD80C31B
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED D Add device types 03 and 04. Add test circuit. Editorial changes throughout. 90-03-05 W. Heckman E Change 1.3. Convert to one part-one part number format. 91-02-08 W. Heckman F Changes in accordance with NOR 5962-R323-92

27C1024

Abstract: 44-Terminal
Contextual Info: REVISIONS LTR DATE YR-MO-QA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV 10 11 12 SHEET PMIC N/A A M S C N/A MICROCIRCUITS, MEMORY, DIGITAL, CMOS 64K X 16 UV EPROM, MONOLITHIC SILICON DRAWING APPROVAL,/ 26 MAY 1989 SIZE CAGE CODE A 67268

MD80C31BH

Abstract: 5962-8506401MQA MD80C31 MR80C31BH MD80C31B 5962-8506403MQA 5962-8506401MYA 5962-8506401MXA MR80C31 CC-416
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Add device types 03 and 04. Add test circuit. Editorial changes thougout. 90-03-05 W. Heckman Change 1.3. Convert to one part-one part number format. 91-02-08 W. Heckman Changes in accordance with NOR 5962-R323-92

st smd diode marking code BUH

Abstract: diode smd marking BUF diode smd marking BBE diode smd marking Bva smd diode order marking code stmicroelectronics STMicroelectronics smd marking code STMicroelectronics smd DIODE marking code marking bbz diode smd marking BBf diode smd marking BUA
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE

st smd diode marking code BUH

Abstract: diode smd marking BUF diode smd marking Bva diode smd marking BBE diode smd marking BUj diode smd marking BUE st smd diode marking code BUZ diode smd marking BBf diode smd marking "BUF" diode code BUH
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE

st smd diode marking code BUH

Abstract: diode smd marking BUF smd diode order marking code stmicroelectronics STMicroelectronics smd marking code marking bbz STMicroelectronics smd DIODE marking code diode SMBJ170A-TR st smd diode marking code BUZ diode smd marking BUE diode smd marking BBE
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE

bbc ds diodes DS 1,8

Abstract: diode smd marking BUE bbc ds diodes DS20-800 B SMBJ8.5CA
Contextual Info: S G S - ÏH O M S O N S M B J 5 .0 A -T R ,C A -T R [ M r e * S S M B J 1 8 8 A -T R ,C A -T R œ @ [ E L [ iO TRANS IL FEATURES • PEAK PULSE POWER: 600 W 10/1 OOO^s ■ STAND OFF VOLTAGE RANGE : From 5V to 188V. ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR

ud 1803 IC

Abstract: L3947 C12761
Contextual Info: r Z 7 S G S -T H O M S O N * > J f. L9947 K ilD Iê lS la lIL iO T O M lê i QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVER PRODUCT PREVIEW • LOW CONSUMPTION IN STANDBY MODE <1 00mA AT ROM TEMP; < 150jiA AT 1 3 0 ^ . TWO HALF BRIDGES FOR 3A LOAD (R d s o n = 0.25Q TYP; Tj = 25°C)

SMBJ5.0A DO214AA

Abstract: marking code BBW SMBJ5.0A buz bbg "marking" diode SMBJ5.0A bbz marking code st marking BBM code SMBJ15 SMBJ13A-TR SMBJ15A-TR
Contextual Info: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline

ac297

Abstract: ac296 TC74ACT646P TC74ACT648P
Contextual Info: TC74ACT646P, TC74ACT648P O C T A L BU8 T R A N S C E IV E R /R E G IS T E R TC74ACT846P N O N -IN V E R T IN G TC74ACT648P I N V E R T I N G _ The TC74ACT646/ACT648 are advanced high speed CMOS OCTAL BUS TRANSCEIVER/REGISTERb fabricated with silicon gate and dovble-layer metal wiring C2MOS

st marking BBM code

Abstract: bbn DIODE SMBJ18A-TR SMBJ10A-TR SMBJ12A-TR SMBJ13A-TR SMBJ15A-TR SMBJ16A-TR SMBJ188A-TR SMBJ20A-TR
Contextual Info: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline