BUA DIODE Search Results

Payton

Abstract: 27C1024 1am2
Contextual Info: REVISIONS LTR DATE YR-MO-QA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE

diode smd marking BUF

Abstract: marking CODE R SMD DIODE SMB J 36 CA diode smd marking BUE diode smd marking BBE diode smd marking "BUF" smd diode code buh diode smd marking BUj diode smd marking Bva SMD CODE BUQ BUL 510
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE DESCRIPTION The SMBJ series are TRANSILTM diodesdesigned

marking code BBH

Abstract: st marking BBM code st smd diode marking code SMD circuits MARKING CODE AA smd code marking 333 SMBJ8.5CA marking code BUH Marking Code SMD bbz ae SMC MARKING SMD CODE BUQ
Contextual Info: DIODES,SMD,Transient Voltage Suppression EMC, FILTERS & SUPPRESSION An extensive range of unidirectional and bidirectional transient voltage suppressors offering a high energy absorption capability ranging from 400W up to 1500W. Available in surface mount or through hole packages. Designed to protect voltage sensitive components, these

Contextual Info: ! a i x Y S Preliminary data V CES IXSX50N60AU1 IXSX50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C

am27CI024

Contextual Info: i l AMD NOTICE OF REVISION NOR (See MIL-STD-480 f o r in s t ru c tio n s ) This re v is io n d escribed below has been au thorized fo r the document L is te d . DATE (YYHHD0) 92-09-05 Form Approved 0MB No. 0704-0188 Pu b lic rep o rtin g burden fo r t h is c o lle c t io n i s estim ated to average 1 hour per response, in clu d in g the time fo r reviewing

Contextual Info: IRFM110A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 100 V ^ D S o n = 0 .4 Í2 1 -5 A lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 H A (M a x .) @ V DS= 1 0 0 V

MD80C31BH

Abstract: 5962-8506401MQA MD80C31 MR80C31BH MD80C31B 5962-8506403MQA 5962-8506401MYA 5962-8506401MXA MR80C31 CC-416
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Add device types 03 and 04. Add test circuit. Editorial changes thougout. 90-03-05 W. Heckman Change 1.3. Convert to one part-one part number format. 91-02-08 W. Heckman Changes in accordance with NOR 5962-R323-92

st smd diode marking code BUH

Abstract: diode smd marking BUF diode smd marking BBE diode smd marking Bva smd diode order marking code stmicroelectronics STMicroelectronics smd marking code STMicroelectronics smd DIODE marking code marking bbz diode smd marking BBf diode smd marking BUA
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE

st smd diode marking code BUH

Abstract: diode smd marking BUF smd diode order marking code stmicroelectronics STMicroelectronics smd marking code marking bbz STMicroelectronics smd DIODE marking code diode SMBJ170A-TR st smd diode marking code BUZ diode smd marking BUE diode smd marking BBE
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE

bbc ds diodes DS 1,8

Abstract: diode smd marking BUE bbc ds diodes DS20-800 B SMBJ8.5CA
Contextual Info: S G S - ÏH O M S O N S M B J 5 .0 A -T R ,C A -T R [ M r e * S S M B J 1 8 8 A -T R ,C A -T R œ @ [ E L [ iO TRANS IL FEATURES • PEAK PULSE POWER: 600 W 10/1 OOO^s ■ STAND OFF VOLTAGE RANGE : From 5V to 188V. ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR

SMBJ5.0A DO214AA

Abstract: marking code BBW SMBJ5.0A buz bbg "marking" diode SMBJ5.0A bbz marking code st marking BBM code SMBJ15 SMBJ13A-TR SMBJ15A-TR
Contextual Info: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline

ac297

Abstract: ac296 TC74ACT646P TC74ACT648P
Contextual Info: TC74ACT646P, TC74ACT648P O C T A L BU8 T R A N S C E IV E R /R E G IS T E R TC74ACT846P N O N -IN V E R T IN G TC74ACT648P I N V E R T I N G _ The TC74ACT646/ACT648 are advanced high speed CMOS OCTAL BUS TRANSCEIVER/REGISTERb fabricated with silicon gate and dovble-layer metal wiring C2MOS

Contextual Info: MIC5800/5801 4/8 Bit Parallel-Input Latched Driver Family S E M I C O N D U C T O R THE INTELLIGENT POWER COMPANY General Description Features The MIC5800/5801 latched drivers are high-voltage, highcurrent integrated circuits comprised of four or eight CMOS

st marking BBM code

Abstract: bbn DIODE SMBJ36ATR st marking BBN code BUA DIODE marking code BBW ST BUN marking BBO code SMBJ5.0A buz SMBJ13A-TR
Contextual Info: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline

LMT87-Q1

Abstract: LMT86-Q1
Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents LMT87, LMT87-Q1 SNIS170B – JAN 2014 – REVISED MAY 2014 LMT87/LMT87-Q1 SC70/TO-92/TO-126, Analog Temperature Sensors with Class-AB Output 1 Features 3 Description • The LMT87/LMT87-Q1 are precision CMOS

5962-8768401MQA

Abstract: MD87C51/B MD87C51 MD87C51-16 5962-87684 MD87C51-16B MD87C51 MARKING 5962-8768402MUA 5962-8768402mqa 87C51/BQA
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add case outline U. Add vendor cage 18325. Add programming method B. Changes 4.3.1c and 4.3.1e. Editorial changes throughout. 89-03-01 W. Heckman B Add device type 02, editorial changes throughout. Add test circuit to figure 3.

qml-38535

Abstract: 87C52 1a44a 5962-9157601MQA 87CS2 87c521
Contextual Info: _ . REVISIONS LTR DATE YR-MO-DA DESCRIPTION G APPROVED A Nor 5 96 2 -R146- 92 92-03-09 Monica L. Paelkincj B Add device types 05 and 06. Add case outlines X and Y. Editorial changes throughout. 96-06-26 Monica L Poetking THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED.

Am27CQ40

Abstract: Am27C040
Contextual Info: ADV MICRO MEMORY DSS7S2Ö aoa'ibis 3ÖE D T = 4 fe -1 3 -2 9 Am27C040 1 mamdm CI Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time - 90 ns Low power consumption - 20 nA typical CMOS standby current

Contextual Info: CI Advance Information Am27C45 Advanced Micro Devices 16,384-Bit 2048 x 8 High-Performance CMOS REGISTERED PROM DISTINCTIVE CHARACTERISTICS • ■ ■ High-speed (20 ns) setup time (10 ns) ctock-to-output/Low-Power (90 mA) CMOS EPROM TEchnology Direct plug-in replacement tor Bipolar PROMs

29C985

Contextual Info: a P re lim in a ry Am29C985 9-Bit x 4-Port Multiple Bus Exchange with Parity Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Four bidirectional I/O ports Power-Up/Down disable - Replaces several bidirectional latched transceivers - Permits multiple bus com munication

Contextual Info: a P re lim in a ry Am29C985 9-Bit x 4-Port Multiple Bus Exchange with Parity Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Four bidirectional I/O ports - Replaces several bidirectional latched transceivers - Permits multiple bus communication - Allows two independent communication channels

AM27CO10

Abstract: AM27C010-120DC AM27C010 gg2mt
Contextual Info: ADV MICRO MEMORY 14E 0 1 Q5S?5Eâ 0Ü27M07 t | Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMO,S EPROM DISTINCTIVE CHARACTERISTICS Compact 32-pin DIP package requires no hardware change for upgrades to 8 megabits Easy upgrade from 28-pin JEDEC EPROMs

D7002

Abstract: D7002c uPD7002 NEC D7002 PD7002 pd7002c BUA 7002 146C 7002C 8085 interrupt
Contextual Info: 3 ì 2 61 NEC < < > - D e s c rip tio n /¿PD7002 10-Bit A/D Converter & Pin C o n fig u ra tio n The ¿/PD7002 is a high perform ance, low power, 10-bit CMOS a na lo g-to -d igita l converter Using the integrating technique the 7002 offers the designer full m icro p ro c­

Am27C040

Contextual Info: il Am27C040 Advanced Micro Devices 4 Megabit 524,288 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time - 90 ns Low power consumption - 20 mA typical CMOS standby current ■ JEDEC-approved pinout - plug in upgrade ol 1 Megabit and 2 Megabit