BU508AF TRANSISTOR Search Results
BU508AF TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA | Rochester Electronics LLC | ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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BU508AF TRANSISTOR Datasheets Context Search
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BU508AF
Abstract: bu508af datasheet transistor bu508af
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Contextual Info: BU508AF BU508AF TV Horizontal Output Applications TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter Value 1500 Units |
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BU508AFContextual Info: BU508AF BU508AF TV Horizontal Output Applications TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter Value 1500 Units |
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Contextual Info: BU508AF BU508AF TV Horizontal Output Applications TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 1500 |
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BU508AF
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BU508AFContextual Info: SavantIC Semiconductor Product Specification BU508AF Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION |
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BU508AF
Abstract: transistor bu508af transistors FOR COLLECTOR CURRENT 4.5A
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BU508AF
Abstract: BU508F
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BU508AFContextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers. |
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BU508DF
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BU508AF
Abstract: transistor bu508af transistor bu508af equivalent bu508af transistor bu508af datasheet ISOWATT218FX JESD97
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BU508AF equivalent
Abstract: transistor bu508af transistor bu508af equivalent transistor BU508AF Data- sheet bu508af datasheet curve tracer all ic datasheet in one pdf file IBM REV 2.8 transistor fall time BU508AD
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Abstract: bu508af philips
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Contextual Info: BU508AF High voltage NPN power transistor for standard definition CRT display Features • State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement |
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Contextual Info: BU508AF High voltage NPN Power transistor for standard Definition CRT display Preliminary Data Features • State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement |
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BU508AF
Abstract: BU508DF BU508F
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV |
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BU508AF
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Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508AF TV HORIZONTAL OUTPUT APPLICATIONS ABSOLUTE MIXIMUM RATING C haracteristic Sym bol Rating Unit C ollecto r E m itter Voltage V ceS 1500 V C ollecto r E m itter Voltage VcEO 700 V Em itter Base Voltage V ebo |
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Abstract: BU508aF equivalent transistor bu508af equivalent BU508AF BU508DF BU508F
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bu508af datasheet
Abstract: BU508AF BU508DF BU508F
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bu508dfContextual Info: N AUER PHILIPS/DISCRETE b=lE D bbS3T31 0D2fl2?D 325 IAPX BU508AF BU508DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistors in a fu lly isolated SOT199 envelope w ith integrated efficiency diode fo r the BU508DF , prim arily intended fo r use in horizontal deflection |
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