BTW 50 200 Search Results

Btw50-600

Abstract: BTW50
Contextual Info: fZT * 7Æ, SGS-THOMSON BTW 50 SCR FEATURES • HIGH SURGE CAPABILITY ■ HIGH ON-STATE CURRENT ■ HIGH STABILITY AND RELIABILITY DESCRIPTION The BTW 50 Family of Silicon Controlled Rectifiers uses a high performance glass passivated tech­ nology. This general purpose Family of Silicon Controlled

10E-02

Abstract: CW-70
Contextual Info: ^ 7 SGS-THOMSON BTW 50 * 7w KfflD gS®[E[L[l T®(Q KiO©i SCR FEATURES • HIGH SURGE CAPABILITY ■ HIGH ON-STATE CURRENT ■ HIGH STABILITY AND RELIABILITY DESCRIPTION The BTW 50 Family of Silicon Controlled Rectifiers uses a high performance glass passivated tech­

10E-02

Abstract: BTW 600 Silicon Controlled Rectifiers
Contextual Info: SbE D 7 CI 2 I1237 0 04 32* ^0 1 Tb ISGTH SGS-THOMSON T -2 5 -0 5 BTW 50 iy S G S-THOMSON SCR FEATURES • HIGH SURGE CAPABILITY ■ HIGH ON-STATE CURRENT ■ HIGH STABILITY AND RELIABILITY DESCRIPTION The BTW 50 Family of Silicon Controlled Rectifiers uses a high performance glass passivated tech­

thomson thyristors

Abstract: thomson scr 77B2
Contextual Info: 7flC D ~ | 7^ S C1E 37 D □ □ 775fi 5 jjjT S GS-TH O M SÔ N 78C 0 7 7 5 8 BTW 49-50— BTW 49-800 FAST SWITCHING THYRISTORS EMICONDÜCTORS THYRISTORS RAPIDES T - Z S '/ r b m h m ü m J Ü i. •T RMS = I S S C R designed for high frequency p o w e r

scr tag 2 200

Abstract: scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138
Contextual Info: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>M C IM M O h T A n DUC IM 'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE

BSTB0246

Abstract: BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D
Contextual Info: MANUFACTURERS T E C H N IC A L DATA SHOULD TAG nearest Equivalent Type TAG nearest Equivalent Type AA AA AA AA AA 107 108 109 110 111 2N 2N 2N 2N 2N BRX BRY BRY BRY BRY 66 54-100 54-200 54-300 54-400 BRX TAG TAG TAG TAG 66 611-100 611-200 611-300 611-400 AA

btw 50 200

Abstract: BTW 600 TR-8010 TYN616 TYN116 BTW39-500 tr 28 tyn 682 TYN416 tyn 5
Contextual Info: thyristors < 80 Arms thyristors < 80 Aeff THOMSON-CSF Tamb = 25°C Typas •o VRRM ■ tsm 10 ms V DRM A 16 Arms N N N TYN TYN TYN TYN TYN (V) / Tcase = 75°C 0516 116 216 416 616 Tj = 125°C 50 100 200 400 600 10 (A) |RM @ V r r m ' d m @ VDRM Tj max max

TY6008

Abstract: TSM 4005 A 6005 F 6005 FAST SWITCHING THYRISTORS TY6008FA BRY 55 200 TY6005F BTX 25 800 TYF6008A 49400
Contextual Info: fast switching thyristors < 100 Arms thyristors rapides < 100 Aeff T1H0MS0N-CSF Tamb - 25°C Type •o Vr r m ■ tsm 10 ms V d RNI A 0,8 A r m s / T c a S e = 2 5 ° C BRY BRY BRY BRY 55 55 55 55 S- 30 S- 60 S-100 S-200 0,52 5 A r m s / T ^ a se = 7 5 ° C

KU 612

Abstract: BTW 600 btw 50 200 ts 435 ku 606 KU 608 RP6020 BTW50-1200 TK1804 RG612
Contextual Info: new standard single phase half-controlled metal stacks q nouveaux ponts standards métalliques monophasés mixtes A verage o u tp u t cu rra n t C o u ra n t m oyen de s o rtie Type Tamb BDT BDT BDT BDT BDT BDT 15 200 15 400 15 600 15 800 15 1000 15 1200 C

triacs BTW 30

Abstract: AL 2450 dv triacs BTW 30 800 BTW 67 btw 600 btw 20 450
Contextual Info: Æ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MEDIUM POWER THYRISTORS & TRIACS < RjooMULggirmiDSS 100 A S T A N D A R D T H Y R IS T O R S P L A S T IC C A S E Tamb = Type '0 VRRM >t s m VDRM See NOTE 30 Arms / Tease = 75°C Tj 16 BTW 68-200 —»-1200

BTW56

Abstract: BTW55 BTW53 3087 BTW52 BTW54 32917B
Contextual Info: ITT Semiconductors Thyristors Thyristors 5 Am p- -B T W Range PN PN Type R EFER EN CE T A B L E Outline Drawing No. Code V R WM V rsm V dWM VoSM Stock No. BTW 52 BTW 53 BTW 54 BTW 55 B TW 56 60 100 200 400 600 60 110 220 440 660 60 100 200 400 600 80 120

btw 600

Abstract: 481200 BTW 66 BTW67-1000N BTW 67 BTW48-200 10MSA BTW50-100 2N681 2N685
Contextual Info: thyristors < 80 Arms thyristors < 80 Aeff THOMSON-CSF Tamb = 25 °C Types •o Vr r m ■t s m 10 ms ■r m @ v r r m ■d m @ V q r m Tj max Vg t •g t A max (mA) max (V) max (mA) 1 40 V DRM (A) (V) 25 Arms / Tcase = 65°C 2N681 2N 682 2N 683 2N 685 2N 6 8 7

TRIAC TAG 280 600

Abstract: TAG 6 600 BT100A 27-600R BSTB0246 TRIAC TAG 626 400 TRIAC TAG 92 TRIAC btw 92 triac TAG bstb0226
Contextual Info: flffli] TR IA C IN METAL AND PLASTIC PACKAGE ^ y TC-220AB TO-66 o ij a r~\ n k ic in i i*j 12 A A RMS A NEW 30V 5 OV­ V k TAG TAB ! 1 DMC SALES TAG 240 IS O LA TED TYPE 241 P A D ESIG N ATIO N TAG 1Ç DMQ A PMC. FOR 245 TAG 246 IO 0V T A G 2 6 0 - 1 00 TAG261-100

BTW 600

Abstract: btw 14 BTW 66 BTW 67 TSM 1250 BTW67 btw 50 200 67600 BTW 25 500
Contextual Info: BTW 66 BTW 67 ¿ = 7 SCS-THOMSON SCR FEATURES • ■ ■ ■ HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY ISOLATED PACKAGE : INSULATED VOLTAGE = 2500V rm S (UL RECOGNIZED : E81734) A~ ^ r K Q A Soi DESCRIPTION Æ ÊO ■ The BTW 66 and BTW 67 Family of Silicon Controlled

10601 scr

Abstract: BTW 600
Contextual Info: SGS-THOMSON BTW 68 N SCR FEATURES • HIGH SURGE CAPABILITY ■ HIGH ON-STATE CURRENT ■ HIGH STABILITY AND RELIABILITY ■ BTW 68 Serie : INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTW 68 (N) Family of Silicon Controlled Recti­

btw 600

Abstract: E81734
Contextual Info: BTW 69 N SCR . . FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY BTW 69 Serie : INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION K The BTW 69 (N) Family of Silicon Controlled Rectifiers uses a high performance glass passivated

Contextual Info: ^ 7 / S G S -T H O M S O N BDISBBSlSeTBBBIOIBS B T W 6 9 N SCR FEATURES . • . ■ HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY BTW69 Serie: INSULATED VOLTAGE = 2500V(RMs) (UL RECOGNIZED : E81734) DESCRIPTION The BTW 69 (N) Family of Silicon Controlled Recti­

BTW 69 N

Abstract: PW70 BTW69-200 69-N
Contextual Info: SGS-THOMSON BTW 69 N SCR FEATURES • HIGH SURGE CAPABILITY ■ HIGH ON-STATE CURRENT ■ HIGH STABILITY AND RELIABILITY ■ BTW 69 Serie : INSULATED VOLTAGE = 2500V(r MS) (UL RECOGNIZED : E81734) DESCRIPTION The BTW 69 (N) Family of Silicon Controlled Recti­

1747-SN 1747 asb with BTR BTW

Abstract: 1746-BAS Allen-Bradley slc 150 slc 500 ladder logic 1747-ASB 1747 SN rio scanner block transfer ladder slc 500 application 1746 BTR Buffer file BAS Series Virtual
Contextual Info: Application Note ASCII Data Transfer to the SLC 500t BASIC Module Series B Because of the variety of uses for this information, the user of and those responsible for applying this information must satisfy themselves as to the acceptability of each application and use of the

BTW 600

Abstract: silicon controlled rectifier BTW 69 n 540 l33
Contextual Info: BTW 68 N SCR . . FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY BTW 68 Serie : INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION K The BTW 68 (N) Family of Silicon Controlled Rectifiers uses a high performance glass passivated

BTW 600

Abstract: 69-N
Contextual Info: / ^ T S C S -TH O M S O N ^ 7 Mt MttOiiuiigiiwifflniei BTW 69 N SCR FEATURES • ■ ■ ■ HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY BTW69 Serie: INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED: E81734) DESCRIPTION The BTW 69 (N) Family of Silicon Controlled Recti­

scr 106d

Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
Contextual Info: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007

scr tic 106

Abstract: tic 126 SILICON CONTROLLED RECTIFIERS SCR 1 TIC 126 btw 14 BTW 67 BTW67 BTW 1400 BTW 66 LT 7237 33E marking
Contextual Info: BTW 66 SGS-THOMSON HD sffi [llLII©ir[SfMO gi BTW 67 SCR FEATURES • ■ . ■ HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY ISOLATED PACKAGE: INSULATED VOLTAGE = 2500V(r MS) (UL RECOGNIZED: E81734) DESCRIPTION The BTW 66 and BTW 67 Family Silicon Controlled

BTW 1400

Abstract: TSM 1250 btw 14 BTW 600 BTw67600 btw 50 200 LT 7237
Contextual Info: BTW 66 BTW 67 / 7 7 SGS-THOMSON KfflO g @i[L[l Tr»[fiOQ©i SCR FEATURES • . ■ ■ HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY ISOLATED PACKAGE: INSULATED VOLTAGE = 2500V(r MS (UL RECOGNIZED: E81734) DESCRIPTION The BTW 66 and BTW 67 Family Silicon Controlled