BTW 20 450 Search Results

triacs BTW 30

Abstract: AL 2450 dv triacs BTW 30 800 BTW 67 btw 600 btw 20 450
Contextual Info: Æ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MEDIUM POWER THYRISTORS & TRIACS < RjooMULggirmiDSS 100 A S T A N D A R D T H Y R IS T O R S P L A S T IC C A S E Tamb = Type '0 VRRM >t s m VDRM See NOTE 30 Arms / Tease = 75°C Tj 16 BTW 68-200 —»-1200

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

1771-NOC

Abstract: 1771RTP4 1771-NT1 1771-RTP 1771-niv LOGO AM2 rtd 1771-NR 1771-RTP4 IET Labs 1771 rtp3
Contextual Info: AllenĆBradley High Resolution Isolated Analog Modules Cat. No. 1771ĆN Series User Manual Important User Information Because of the variety of uses for the products described in this publication, those responsible for the application and use of these products must satisfy themselves that all necessary steps have been

BROWN BOVERI

Abstract: TGS 880 Brown Boveri btw bf 5118 BTS 333 btw 14 rs tube 83A17 KV1610 BROWN BOVERI 10
Contextual Info: W assergeküh lte H ochleistungsSendetriode W a te r-C o o le d High P ow er T ra n s m ittin g Triode Trio de d'ém ission de grande puissance à refroidissem en t par eau H a u p td a te n Q u ic k R e fe re n c e D a ta C a ra c té ris tiq u e s p rin c ip a le s

BTW92-600RU

Abstract: BTW92 BTW-92 BTW92-1200R 1303RB BTX81-700R CR18-1203RBA CR18-1103RB CR18-1103RBA 8-903RB
Contextual Info: LOW POWER THYRISTORS — 14 to 20A It A V 85°C • tsm |2t 14 A 240 A 290 A2sec T y p e No. d v / d t= 2 0 V / p S d v / d t= 2 0 0 V / p S V CR1 8 -903RB C R 1 8 -10 0 3 R B C R 1 8 -1 1 0 3 R B C R 1 8-1 203RB CRT 8 130 3 R B C R 1 8 -1 4 0 3 R B C R 18 1503R B

BTW48-600

Abstract: 10-32 UNF 2N681 2N682 2N683 2N685 2N687 2N688 2N689 2N690
Contextual Info: S ê s g s th o m s o n GENERAL PURPOSE & INDUSTRIAL ^ 7 # M0ÊlE IlLICTl 3 lM0(gi MEDIUM POWER THYRISTORS & TRIACS < 100 A STANDARD THYRISTORS METAL CASE Tamb = 25-C Type •o V RRM ■t s m 'RM @ VRRM >DM @ V DRM See NOTE (A) 7.4 Arms / Tcase = 90°C 2N 1770— 2N 1778

BTW45

Abstract: BTW45-400R 800R BTW45-400RU philips 102 s10286 BTW45 Series
Contextual Info: H AUER P HI LI PS /D IS CR ET E biz D • bbSB^l 0027377 773 B A P X BTW45 SERIES THYRISTORS Glass-passivated silicon th y ris to rs in m etal envelopes, intended fo r p ow er co n tro l applications. The series consistos o f reverse p o la rity types anode to stud id e n tifie d by a s u ffix R: BTW 45-400R to

BTW45

Abstract: BTW45 Series BTW45-400R 600R 800R BTW45-400RU 1200R btw45 600r
Contextual Info: H AUER PHILIPS/DISCRETE b'IE D • bb53^3]. 0 0 2 7 3 7 7 77 3 ■ BTW45 SERIES THYRISTORS Glass-passivated silicon th y ris to rs in m etal envelopes, intended fo r p o w e r c o n tro l applications. The series consistos o f reverse p o la rity types anode to stud id e n tifie d by a s u ffix R: BTW 45-400R to

FTL 8-1

Abstract: FTW 425 TH554 TH480 TH533 TH553 A10720 TH 477 th 351
Contextual Info: MAINTENANCE TUBES INDUSTRIAL RF HEATING Radiation-cooled triodes Output power Reference Typical Operating conditions Service Va -Vg1 Ia Ig1 Pgs f Vf If kV V mA mA W MHz V A 4 40 7.5 3.2 - 7.5 3.2 W 170 285 T 50-1 215 330 T 50-2 1580 2400 T 300-1 Cathode C-Telegr.

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

BTA 600

Abstract: TGAL610 bta 700 triacs btb 15 700 triacs BTW 30 TLC226B BTA 18 800 TGAL608 thomson tgf triacs BTA
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL MEDIUM POWER THYRISTORS & TRIACS < 100 A METAL CASE FAST SWITCHING THYRISTORS Tam b = 2 5 °C *0 V RRIM V tM I A m ax (V) 't m V DRM V RRM •d m * @ VGT •G ì •h di/dt m ax m ax (mA) m ax (mA) m ax m in ( A / f is )

BTW45-400R

Abstract: 2S44 mml 600 Philips LED 1979 600R 800R ML-100r
Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bbSBTBl DOllTSS b BTW45 SERIES T - ^ - iS T THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended for power control applications. 1200R leS C° nSiStOS ° f reV6rSe P °,aritV WPes anode to stud identified by a suffix R: BTW45-400R to

Contextual Info: H AUER PHILIPS/DISCRETE b b S a ^ l 0027377 773 H A P X b'JE » BTW45 SERIES J V THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r power control applications. The series consistos o f reverse polarity types anode to stud identified by a su ffix R: BTW45-400R to

modicon plc

Abstract: rs-422 db9 modbus PLC5 modem PLC hyperterminal Diode Mark N10 modbus protocol MVI71-MCM RSLOGIX 500 LADDER rslogix 5
Contextual Info: MVI71-MCM PLC Platform Modbus Communication Module User Manual January 11, 2005 Please Read This Notice Successful application of this module requires a reasonable working knowledge of the PLC Platform Modbus Communication Module hardware and the application in which the combination is to be used.

RD91 package

Abstract: SCR 30 A TOP3 BTW67 DATASHEET SCR 30 A TOP3 BTW69 JESD97 RD91 motor IG 2200 19 x 00 15 r
Contextual Info: BTW67 and BTW69 Series 50A SCRS STANDARD Table 1: Main Features A Symbol Value Unit IT RMS 50 A VDRM/VRRM 600 to 1200 V IGT 80 mA G K K G DESCRIPTION Available in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical,

btw67

Abstract: RD91 package RD91 TOP3
Contextual Info: BTW67 and BTW69 Series 50A SCRS STANDARD Table 1: Main Features A Symbol Value Unit IT RMS 50 A VDRM/VRRM 600 to 1200 V IGT 80 mA G K K G DESCRIPTION Available in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical,

PT200 rtd

Abstract: 1797-IRT8 1797-PS2E Ni200 allen bradley cjc PT200 rtd chart 1797-ob4d RTD input irt8 1797IBN16 allen bradley PLC BTR BTW "ladder logic"
Contextual Info: FLEX Ex Thermocouple/ RTD/mV Input Module Cat. No. 1797-IRT8 User Manual Important User Information Because of the variety of uses for the products described in this publication, those responsible for the application and use of this control equipment must satisfy themselves that all necessary steps

CS "Brown Boveri"

Abstract: BROWN BOVERI BROWN BOVERI cs 1000 MJ 1502 S Brown Boveri btw bts 122 transmitter Bts CS 220 "Brown Boveri" BTW150-2 315A
Contextual Info: S iedegekühlte H ochleistungsSendetriode Vapour-C ooled High P ow er T ra n s m ittin g Triode Triode d'ém ission de grande puissance à refroidissem en t par vaporisation d'eau si H a u p td a te n Q u ic k R e fe re n c e D a ta C a ra c té ris tiq u e s p rin c ip a le s

HMT112U6

Abstract: HMT125U6AFP8C-S6
Contextual Info: 240pin DDR3 SDRAM Unbuffered DIMMs DDR3 SDRAM Unbuffered DIMMs Based on 1Gb A version HMT164U6AFP R 6C HMT112U6AFP(R)8C HMT112U7AFP(R)8C HMT125U6AFP(R)8C HMT125U7AFP(R)8C * Contents are subject to change without prior notice. Rev. 0.1 / Dec 2008 1 HMT164U6AFP(R)6C

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

AL 2450 DV CHARGER

Contextual Info: BTW69-1200N 50 A – 1200 V non insulated SCR thyristor Datasheet - production data Description A G K A K Available in non insulated TOP3 high power package, the BTW69-1200N is suitable for applications where power switching and power dissipation are critical, such as by-pass switch,

H5TQ1G83

Abstract: H5TQ1G43 H5TQ1G63 1333F hynix ddr3 CL10 DDR3-1066 DDR3-1333 RTT60PD120 cross reference cmos
Contextual Info: H5TQ1G43AFP-xxC H5TQ1G83AFP-xxC H5TQ1G63AFP-xxC 1Gb DDR3 SDRAM Preliminary version H5TQ1G43AFP-xxC H5TQ1G83AFP-xxC H5TQ1G63AFP-xxC * Since DDR3 Specification has not been defined completely yet in JEDEC, this document may contain items under discussion.

Contextual Info: HY5TQ1G431ZNFP HY5TQ1G831ZNFP HY5TQ1G631ZNFP 1Gb DDR3 SDRAM Preliminary version HY5TQ1G431ZNFP HY5TQ1G831ZNFP HY5TQ1G631ZNFP * Since DDR3 Specification has not been defined completely yet in JEDEC, this document may contain items under discussion. * Contents may be changed at any time without any notice.

Design Guide for DDR3-1066

Abstract: hynix ddr3 PS1314 BC4RD CL10 a12b ddr3 sdram chip 512 mb RTT20 BTW 600 RTT60PU120
Contextual Info: HY5TQ1G431ZNFP HY5TQ1G831ZNFP HY5TQ1G631ZNFP 1Gb DDR3 SDRAM Preliminary version HY5TQ1G431ZNFP HY5TQ1G831ZNFP HY5TQ1G631ZNFP * Since DDR3 Specification has not been defined completely yet in JEDEC, this document may contain items under discussion. * Contents may be changed at any time without any notice.