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BTC5706 Datasheets (2)

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CYStech Electronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BTC5706I3		CYStech Electronics	Low Vcesat NPN Epitaxial Planar Transistor	Original	PDF	156.02KB	5
BTC5706J3		CYStech Electronics	Low Vcesat NPN Epitaxial Planar Transistor	Original	PDF	156.03KB	5

BTC5706 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C5706 Abstract: Transistor C5706 c5706 transistor c5706 equivalent transistor c5706 equivalent c5706 to252 BC5706 Pw380us c5706 1a C5706 NPN Transistor Contextual Info: Spec. No. : C819J3 Issued Date : 2004.12.18 Revised Date : Page No. : 1/5 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTC5706J3 Features • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation	Original	C819J3 BTC5706J3 O-252 UL94V-0 C5706 Transistor C5706 c5706 transistor c5706 equivalent transistor c5706 equivalent c5706 to252 BC5706 Pw380us c5706 1a C5706 NPN Transistor	PDF
Transistor C5706 Abstract: c5706 transistor C5706 C5706 NPN Transistor C5706 I npn c5706 c5706 equivalent BTC5706I3 c5706 1a c5706 equivalent transistor Contextual Info: Spec. No. : C819I3 Issued Date : 2004.12.16 Revised Date :2009.02.04 Page No. : 1/8 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTC5706I3 Features • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation	Original	C819I3 BTC5706I3 O-251 UL94V-0 Transistor C5706 c5706 transistor C5706 C5706 NPN Transistor C5706 I npn c5706 c5706 equivalent BTC5706I3 c5706 1a c5706 equivalent transistor	PDF
c5706 Abstract: Transistor C5706 c5706 transistor c5706 1a c5706 equivalent transistor c5706 equivalent Transistor C5706 3a BTC5706A3 C5706 3a C5706 I Contextual Info: CYStech Electronics Corp. Spec. No. : C819A3 Issued Date : 2006.06.06 Revised Date : Page No. : 1/ 5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706A3 Features • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation	Original	C819A3 BTC5706A3 UL94V-0 c5706 Transistor C5706 c5706 transistor c5706 1a c5706 equivalent transistor c5706 equivalent Transistor C5706 3a BTC5706A3 C5706 3a C5706 I	PDF
C5706 Abstract: Transistor C5706 c5706 transistor c5706 equivalent c5706 equivalent transistor C5706 I BTC5706I3 C819I3 Contextual Info: Spec. No. : C819I3 Issued Date : 2004.12.16 Revised Date : Page No. : 1/5 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTC5706I3 Features • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation	Original	C819I3 BTC5706I3 O-251 UL94V-0 C5706 Transistor C5706 c5706 transistor c5706 equivalent c5706 equivalent transistor C5706 I BTC5706I3 C819I3	PDF