BST12 Search Results

smd TRANSISTOR 1D

Abstract: smd transistor marking 2J TRANSISTOR SMD 2X K BST122 SMD TRANSISTOR MARKING 1D transistor ZR TRANSISTOR MARKING DM Marking LR sot89
Contextual Info: • bbSB^ai 0023^00 0^4 « A P X N AUER PH ILI PS / D IS CR E TE h7£ BST122 P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SO T89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SM D-techno logy.

2SK2159

Abstract: 2SK680A 2SJ199 2SJ197 mmtf1n10
Contextual Info: N & P CHANNEL MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 0.5A TO 5A • CAPABLE OF OPERATING FROM VOLTAGES AS LOW AS 1.5V SINGLE N & P CHANNEL MOSFETS FUNCTIONAL EQUIVALENTS PART NO BST120 BST122 BST80 IRFL014 IRFL110 IRFL2605 IRFL9014 IRLL014 IRLL110

lm 9805

Abstract: BST120 smd transistor marking DK
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BST120 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

lm 9805

Abstract: smd transistor marking B3 smd transistor marking DK diode SOT89 smd marking B mumbai SMD Transistor 6f BP317 BST120 transistor smd marking dk Transistor lm 358
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BST120 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

BDD20090519

Abstract: BST12L0 BST12L-0
Contextual Info: High Efficiency Non-Isolated DC-DC Converter BST12L Series • Information The BST12L series is a small, thin, highly efficient and low noise non-isolated type step down DC-DC converter with 12V input that has been developed for distributed feeding. Output

MARKING SMD transistor 12X

Abstract: smd transistor marking HA TRANSISTOR SMD MARKING 2 HA transistor marking 12x transistor smd marking BA 26 smd 37e BST120 smd transistor 591 D-MOS transistor p-channel smd transistor marking 2U
Contextual Info: • ^53^31 aG23T77 5TT « A P X N AMER P H I L I P S / D I S C R E T E BST120 b7E T> P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

BST124

Abstract: depletion mode
Contextual Info: bhS3T31 Philips Semiconductors 0023=103 I APX 6T3 Product specification N-channel depletion mode vertical D-MOS transistors BST124 N AMER PHILIPS/DISCRETE b?E ]> QUICK REFERENCE DATA FEATURES • High-speed switching SYMBOL • No secondary breakdown. VDs

Contextual Info: Philips Semiconductors Product specification N-channel depletion mode vertical D-MOS transistors BST124 QUICK REFERENCE DATA FEATURES • High-speed switching SYMBOL • No secondary breakdown. VDs DESCRIPTION N-channel depletion mode vertical D-MOS transistor in a TO-126

BST122

Contextual Info: • b b s s 'm 0023^0 uw N AMER PHILIPS/DISCRETE APX b7E D BST122 JV P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended fo r use in relay, high-speed and line-transformer drivers, using SMD-technology.

diode SOT89 smd marking B

Abstract: b3 smd transistor D-MOS transistor p-channel SMD TRANSISTOR MARKING BR transistor SMD DK transistor smd marking LN BST122 j s switching transformer smd 4814 SMD Transistor 6f
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BST122 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

10A10 diode

Abstract: BST12M BDD20090519 6A06 diode 940 SMD Y11 smd code 10A10 smd diode 07S06
Contextual Info: High Efficiency Non-Isolated DC-DC Converter BST12M Series • Information The BST12M series is a small, thin, highly efficient and low noise non-isolated type step down DC-DC converter with 12V input that has been developed for distributed feeding. Output

50lfm

Contextual Info: High Efficiency Non-Isolated DC-DC Converter BST12L Series • Information The BST12L series is a small, thin, highly efficient and low noise non-isolated type step down DC-DC converter with 12V input that has been developed for distributed feeding. Output

Contextual Info: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

Contextual Info: bhS3T31 0023=163 6T3 W A P X Philips Semiconductors Product specification N-channel depletion mode vertical D-MOS transistors BST124 N AMER PHILIPS/DISCRETE b?E J> QUICK REFERENCE DATA FEATURES • High-speed switching SYMBOL • No secondary breakdown. VDs

Contextual Info: Purchase On-Line 1 B H ^□ATEL INNOVATION and EXCELLENCE www. datel. com Dual Output B ST M o d els Low-Cost, High-Reliability 3 Watt, DC/DC Converters Features • Lowest cost! Highest reliability! ■ 100% SMT-on-pcb, including magnetics ■ 100% autom atically assem bled

Contextual Info: Inductive sensor NI8U-MT12E-VP4X-H1141 • Threaded barrel, M12 x 1 ■ Brass, PTFE-coated ■ Factor 1 for all metals ■ Magnetic field immune ■ Extended temperature range ■ High switching frequency ■ DC 4-wire, 10…65 VDC ■ Changeover contact, PNP output

Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor Bi2-P12-Y1X ● threaded barrel, M12 x 1

Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor Bi3U-M12E-VN4X-H1141 M12 x 1 46 17/4

BI2-P12SK-AP6X

Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor Bi2-P12SK-AP6X M12 x 1 17/8 LED 40

NI4-M12-AP6X-H1141

Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor Ni4-M12-AP6X-H1141 M12 x 1 10 36

BI2-S12-AP6X-H1141

Abstract: BI2-S12-AP6X
Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor Bi2-S12-AP6X-H1141 M12 x 1 30 51

Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor magnetic-field immune Bi2-MT12-AP6X-H1141/S34

BI4-G12K-An6X

Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor with extended switching distance

BI2-G12SK-AP6X

Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor Bi2-G12SK-AP6X M12 x 1 17/4 LED 40