BSS63 Search Results

Contextual Info: SMD Type SMD Type Transistors Product specification BSS63 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 PNP general purpose amplifier 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1

Contextual Info: r Z 7 SGS-THOMSON ^ 7# R L,[iera M©l BSS63 SMALL SIGNAL PNP TRANSISTOR Type Marking BSS63 T3 a SILICON EPITAXIAL PLANAR PNP TRANSISTORS • MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS • GENERAL PURPOSE LOW FREQUENCY APPLICATONS

Contextual Info: BSS63 _J V HIGH VOLTAGE P-N-P TRANSISTORS Silicon planar epitaxial transistor in a m icrominiature plastic package intended fo r application in thick and thin -film circuits. This transistor is intended fo r high voltage general purpose and switching

Contextual Info: High Voltage Transistors BSS63LT1 PNP Silicon 3 3 COLLECTOR 1 1 BASE 2 2 CASE 318–08, STYLE 6 SOT– 23 TO–236AB EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector– Emitter Voltage V CEO –100 Vdc Collector– Emitter Voltage (R BE = 10 kΩ)

BSS63

Abstract: bss63 bm BSS64 high gain PNP POWER TRANSISTOR "SOT23"
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS63 PNP high-voltage transistor Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet PNP high-voltage transistor BSS63 FEATURES PINNING • Low current max. 100 mA PIN • High voltage (max. 100 V).

Contextual Info: ON Semiconductort High Voltage Transistor BSS63LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −100 Vdc Collector −Emitter Voltage RBE = 10 kΩ VCER Collector Current — Continuous 3 Vdc −110 1 IC −100 mAdc

MARKING M391

Abstract: BSS63LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors BSS63LT1 PNP Silicon 3 COLLECTOR 3 1 1 BASE 2 2 CASE 318–08, STYLE 6 SOT– 23 TO–236AB EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector– Emitter Voltage V CEO –100 Vdc Collector– Emitter Voltage (R BE = 10 kΩ)

BSS63LT1

Contextual Info: MOTOROLA Order this document by BSS63LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor BSS63LT1 COLLECTOR 3 PNP Silicon 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –100 Vdc Collector – Emitter Voltage

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSS63 * COMPLEMENTARY TYPE - BSS64 PARTMARKING DETAILS - BSS63 = T3 BSS63R = T6 ABSOLUTE MAXIMUM RATINGS PARAMETER C ollector-B ase V oltage C o lle c to r-E m itte r V oltag e Em itter-Base V oltag e VALUE

BSS63LT1

Contextual Info: ON Semiconductort High Voltage Transistor BSS63LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –100 Vdc Collector–Emitter Voltage RBE = 10 kΩ VCER 3 Vdc –110 Collector Current — Continuous 1 IC –100 mAdc

marking of m7 diodes

Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
Contextual Info: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.

transistor marking code 7E SOT-23

Abstract: transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23
Contextual Info: FERRANTI semiconductors BSS63 PNP S ilico n Planar High V o lta g e T ra n s is to r D ES C R IPTIO N & This plastic encapsulated transistor is designed fo r any application requiring high vo lta g e capability a t relatively low collector currents. C o m p lem en tary to th e BSS64.

KD transistor

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 - SEPTEMBER 95 Q_ C O M PLIM E N TA R Y TYPE - BSS63 PAR TM ARKING DETAIL - BSS64 - BSS64 U3 BSS64R - U6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L C o lle c to r-B a s e V o lta g e

transistor 1548 b

Contextual Info: • bbSaiBl DDE5b03 b?E H A P X N AUER PHILIPS/DISCRETE BSS63 b?E D HIGH VOLTAGE P-N-P TRANSISTORS Silicon planar epitaxial transistor in a m icrom iniature plastic envelope intended fo r application in thick and th in -film circuits. This transistor is intended fo r high voltage general purpose and switching

Contextual Info: SEMICONDUCTOR BSS63 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L L 2 UNIT H RATING A SYMBOL Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -6 V Collector Current IC -100 mA Emitter Current

Contextual Info: ON Semiconductort High Voltage Transistor BSS63LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –100 Vdc Collector–Emitter Voltage RBE = 10 kΩ VCER 3 Vdc –110 Collector Current — Continuous 1 IC –100 mAdc

t6 marking sot23

Abstract: BSS63 t6 sot23 marking T6
Contextual Info: SEMICONDUCTOR BSS63 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 T6 1 2 Item Marking Description Device Mark T6 BSS63 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: S 0 T 2 3 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSS64 * COMPLEMENTARY TYPE - BSS63 PARTMARKING DETAILS - BSS64 = U3 BSS64R = U6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BO L VALUE UNIT C ollector-B ase V oltag e V CBO 120 V C o lle c to r-E m itte r V oltag e

301 marking code PNP transistor

Abstract: 359 marking sot23 marking code 10 sot23 Philips MARKING CODE BP317 BSS63 BSS64
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BSS63 PNP high-voltage transistor Product specification Supersedes data of 1997 Jul 03 1999 Apr 15 Philips Semiconductors Product specification PNP high-voltage transistor BSS63 FEATURES PINNING • Low current max. 100 mA

smd transistor t6

Abstract: SMD TRANSISTOR MARKING BR BSS63R t6 marking sot23
Contextual Info: Transistors SMD Type High Voltage Transistor BSS63R SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

63D14

Abstract: PA2467NL ETH1-230LD SS-6488-NF-K1 2.2NF Switching Regulator 3528 PS2801-1-L DC-133 ETH1-230L PA2466
Contextual Info: 5 4 3 J1 SS-6488-NF-K1 1 TX+ 9 6 SPARE1 4 2 10 5 TD- 3 OUT TXCT 11 4 RD+ 4 TO RXCT 12 3 RCT 5 PHY 13 2 RD- 6 14 1 5 C14 0.01uF 100V R4 75 C13 0.01uF 100V C15 0.01uF 100V C16 0.01uF 100V R6 75 1 C17 1000pF 2KV 1 +C5 1 C6 2.2uF 100V 1210 10uF 100V D1 SMAJ58A

prtr5v0u6s

Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
Contextual Info: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years

42673

Abstract: negative voltage regulator, 48V 817 Opto isolator ZRL431 circuit of 5v from 220 ac without transformer H2019 ltc4267 p channel mosfet 100v Si3442DV "power sourcing equipment"
Contextual Info: LTC4267-3 Power over Ethernet IEEE 802.3af PD Interface with Integrated Switching Regulator DESCRIPTIO U FEATURES n n n n n n n n n n n Complete Power Interface Port for IEEE 802 .3af Powered Device PD Onboard 100V, UVLO Switch Constant-Frequency 300kHz Operation

ETH1-230LD

Abstract: ETH1-230L pa1558nl pA1558 PIN DIAGRAM on pad for RJ45 LTC4259A LTC4264 DF1501S SMAJ58A IEEE 802.11n
Contextual Info: LTC4264 High Power PD Interface Controller with 750mA Current Limit DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete High Power PD Interface Controller IEEE 802.3af Compliant Onboard 750mA Power MOSFET Complementary Power Good Outputs