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    onsemi BSS138-G

    N-Channel Logic Level Enhancement Mode Field Effect Transistor 50V 220mA
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    Master Electronics BSS138-G 50,240
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    Verical () BSS138-G 50,000 250
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    BSS138-G 42,000 3,000
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    Avnet Americas () BSS138-G Tape & Reel 54,000 52 Weeks 3,000
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    BSS138-G Tape & Reel 6,000
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    Mouser Electronics BSS138-G 1,033,709
    • 1 $0.90
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    Newark BSS138-G Bulk 3,000
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    Onlinecomponents.com BSS138-G 50,240
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    Bristol Electronics () BSS138-G 5,348
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    BSS138-G 182 1
    • 1 $0.41
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    Quest Components BSS138-G 145
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    Rochester Electronics BSS138-G 50 1
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    TME BSS138-G 559 1
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    Richardson RFPD BSS138-G 9,000
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    Avnet Asia BSS138-G 52 Weeks 12,000
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    Avnet Silica BSS138-G 39,000 21 Weeks 3,000
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    EBV Elektronik BSS138-G 22 Weeks 3,000
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    Flip Electronics BSS138-G 5,836
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    Comchip Technology Corporation Ltd BSS138-G

    MOSFETs 50V 0.22A SOT-23
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    Mouser Electronics BSS138-G 329
    • 1 $0.35
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    Others BSS138_G

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    Chip 1 Exchange BSS138_G 738
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    Unisonic Technologies Co Ltd BSS138G-AE2-R

    Bipolar Transistors (BJT); BSS138G-AE2-R; UTC
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    Maritex BSS138G-AE2-R 1,894 5
    • 1 $0.05
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    BSS138G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UNISONICTECHNOLOGIESCO., LTD BSS138 Preliminary Power MOSFET N -CH AN N EL LOGI C LEV EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		bss138bss138l-ae2-rqw-r502-271 PDF

    Contextual Info: MOSFET BSS138-G N-Channel 50-V D-S MOSFET RoHS Device Features SOT-23 1 : Gate 2 : Source 3 : Drain -High density cell design for extremely low RDS(ON). -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 -Case: SOT-23, molded plastic.


    Original     		bss138-got-23mil-std-750qw-btr40 PDF

    BSS138G

    Abstract: BSS138 TO236 BSS138
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION 3 This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves


    Original     		bss138ot-23-3o-236bss138g-ae2-r+3qw-r502-271bss138gbss138 to236 PDF

    BSS138 TO236

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ 3 DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		bss138ot-23-3o-236qw-r502-271+1bss138 to236 PDF

    BSS138G-AE3-R

    Abstract: BSS138_G BSS138G BSS138L BSS138 BSS13
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		bss138bss138lbss138gbss138-ae3-r+5bss138l-ae3-rqw-r502-271bss138g-ae3-rbss138_gbss13 PDF

    BSS138G

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		bss138ot-23-3ot-323qw-r502-271+1bss138g PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE  DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		bss138bss138g-ae2-rbss138g-al3-rqw-r502-271 PDF