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    BSS138G Search Results

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    onsemi BSS138-G

    FET 50V 3.5 OHM SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () BSS138-G Digi-Reel 16,711 1
    • 1 $0.39
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    BSS138-G Cut Tape 16,711 1
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    BSS138-G Reel 15,000 3,000
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    Avnet Americas BSS138-G Reel 15 Weeks 3,000
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    Mouser Electronics BSS138-G 1,186,093
    • 1 $0.39
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    Verical () BSS138-G 57,000 3,000
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    BSS138-G 54,000 3,000
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    Newark BSS138-G Bulk 3,000
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    Onlinecomponents.com BSS138-G 54,000
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    Bristol Electronics () BSS138-G 5,348
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    BSS138-G 182 20
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    Quest Components BSS138-G 145
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    Rochester Electronics BSS138-G 50 1
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    TME BSS138-G 2,100 1
    • 1 $0.26
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    Richardson RFPD BSS138-G 9,000
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    Avnet Asia BSS138-G 15 Weeks 12,000
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    Avnet Silica BSS138-G 16 Weeks 3,000
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    EBV Elektronik BSS138-G 17 Weeks 3,000
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    Master Electronics BSS138-G 54,000
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    New Advantage Corporation BSS138-G 6,000 1
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    Comchip Technology Corporation Ltd BSS138-G

    MOSFETs 50V 0.22A SOT-23
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    Mouser Electronics BSS138-G 38,447
    • 1 $0.35
    • 10 $0.24
    • 100 $0.15
    • 1000 $0.07
    • 10000 $0.04
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    Verical BSS138-G 33,000 3,000
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    Karl Kruse GmbH & Co KG BSS138-G 21,000
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    NAC BSS138-G 33,000 1
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    Chip 1 Exchange BSS138-G 21,000
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    Others BSS138-G

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    PUI BSS138-G 21,000
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    Others BSS138_G

    INSTOCK
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    Chip 1 Exchange BSS138_G 738
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    onsemi BSS138_G

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    Chip Stock BSS138_G 10,751
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    BSS138G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UNISONICTECHNOLOGIESCO., LTD BSS138 Preliminary Power MOSFET N -CH AN N EL LOGI C LEV EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		BSS138 BSS138L-AE2-R QW-R502-271 PDF

    Contextual Info: MOSFET BSS138-G N-Channel 50-V D-S MOSFET RoHS Device Features SOT-23 1 : Gate 2 : Source 3 : Drain -High density cell design for extremely low RDS(ON). -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 -Case: SOT-23, molded plastic.


    Original     		BSS138-G OT-23 OT-23, MIL-STD-750, QW-BTR40 PDF

    BSS138G

    Abstract: BSS138 TO236 BSS138
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION 3 This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves


    Original     		BSS138 OT-23-3 O-236) BSS138G-AE2-R QW-R502-271 BSS138G BSS138 TO236 BSS138 PDF

    BSS138 TO236

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ 3 DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		BSS138 OT-23-3 O-236) OT-23-3 QW-R502-271 BSS138 TO236 PDF

    BSS138G-AE3-R

    Abstract: BSS138_G BSS138G BSS138L BSS138 BSS13
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		BSS138 BSS138L BSS138G BSS138-AE3-R BSS138L-AE3-R QW-R502-271 BSS138G-AE3-R BSS138_G BSS138G BSS138L BSS138 BSS13 PDF

    BSS138G

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		BSS138 OT-23-3 OT-323 QW-R502-271 BSS138G PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE  DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		BSS138 BSS138G-AE2-R BSS138G-AL3-R QW-R502-271 PDF