BSS138 SS Search Results

Contextual Info: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance

BSS138TA

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS BSS138 S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 50 V Continuous Drain Current at Tamb=25°C ID 200 mA

BSS138

Abstract: BSS138 50V Zetex bss138
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS BSS138 S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 50 V Continuous Drain Current at Tamb=25°C ID 200 mA

bss138

Abstract: bss138 50
Contextual Info: P A IR C H II- D MICDNDUCTQ R May 1995 tm BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products

PHILIPS DMOS FET

Contextual Info: Philips Components Data sheet status Preliminary specification BSS138 date of issue September 1990 N-channel enhancem ent m ode vertical D-M O S FET FEATURES PIN CONFIGURATION • Low threshold voltage • CMOS compatible • Low on-resistance. PINNING - SOT223

BSS138

Contextual Info: A Product Line of Diodes Incorporated BSS138 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • BVDSS > 50V RDS on ≤ 3.5Ω @ VGS= 5V Maximum continuous drain current ID = 200mA

BSS138-7

Abstract: BSS138 transistor bss138 bss138 MARKING
Contextual Info: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V D-S MOSFET SOT-23 FEATURE z High density cell design for extremely low RDS(on) z Rugged and Relaible 1. GATE 2. SOURCE 3. DRAIN MARKING: SS Maximum ratings (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V D-S MOSFET SOT-23 FEATURE z High density cell design for extremely low RDS(on) z Rugged and Relaible 1. GATE 2. SOURCE 3. DRAIN MARKING: SS Maximum ratings (Ta=25℃ unless otherwise noted)

transistor bss138

Abstract: bss138 bss138 MARKING BSS138 SS
Contextual Info: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance

mosfet low vgs

Abstract: Marking code SS
Contextual Info: BSS138 Vishay Semiconductors New Product formerly General Semiconductor N-Channel Enhancement-Mode MOSFET Low VGS th VDS 50V RDS(ON) 3.5Ω ID 220mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4)

Contextual Info: BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES 0.120 3.04 • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.110(2.80) • Advanced Trench Process Technology 0.006(0.15)MIN. • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω

bss138

Abstract: bss138 MARKING BSS138 SS all diodes ratings DMOS FET marking code SS SOT23 BSS138TA marking ss BSS138/BSS100 TO-92
Contextual Info: A Product Line of Diodes Incorporated BSS138 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • BVDSS > 50V RDS on ≤ 3.5Ω @ VGS= 5V Maximum continuous drain current ID = 200mA

SmD TRANSISTOR a77

Abstract: smd marking code SSs
Contextual Info: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138

Contextual Info: BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology

Contextual Info: MOSFET BSS138-G N-Channel 50-V D-S MOSFET RoHS Device Features SOT-23 1 : Gate 2 : Source 3 : Drain -High density cell design for extremely low RDS(ON). -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 -Case: SOT-23, molded plastic.

Contextual Info: BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology

"MARKING CODE SS"

Abstract: marking code SS BSS138
Contextual Info: BSS138 N-Channel Enhancement-Mode MOSFET Low V t c u d o r TO-236AB SOT-23 P H C w e N N RE FET T Top View N E G GS(th) VDS 50V RDS(ON) 3.5Ω ID 220mA .122 (3.1) .110 (2.8) 0.031 (0.8) .016 (0.4) 0.035 (0.9) .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4)

PQ19-1

Abstract: SSM34 quanta quanta battery FDS6679 MAX1873 DTC144EU PR139 AO3402 quanta computer
Contextual Info: 1 2 3 4 5 6 7 8 1 4 CCSN 4 CCSP A VIN_P PC1 0.1U/50V/X7R CH41006KA12 PC2 0.1U/50V/X7R CH41006KA12 PL1 60/3A CX1PG600001 2 1 2 1 A PC4 0.1U/50V/X7R CH41006KA12 3 2 1873 1873 PQ4 BSS138 BAM01380Z04 PC64 0.047U 3 1 CCI 1 4 PR147 22K CS32203J908 11 BATT 10 REF

marking code ss

Contextual Info: BSS138 N-Channel Enhancement-Mode MOSFET Low V t c u d o r TO-236AB SOT-23 P H C w e N N RE ET T Top View NF E G GS(th) VDS 50V RDS(ON) 3.5Ω ID 220mA TM .122 (3.1) .110 (2.8) 0.031 (0.8) .016 (0.4) 0.035 (0.9) .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4)

N mosfet sot-23 marking ND

Abstract: marking code ss
Contextual Info: <iX G e n e r a l v _ BSS138 S e m ic o n d u c t o r N-Channel Enhancement-Mode MOSFET ? t il* 1 TO-236AB SOT-23) •122(3.1) .110 2.8 LowVGS(th) V d s 50V R d S(ON)3.5Q I d 220mA ' .016(0.4) 1m *. 0.031 (0.8) H h Top View T 035 (0.9) ~T

Contextual Info: SOT23 N-CHANNEL EN H AN CEM EN T M O D E VERTICAL D M O S FET BSS138 IS S U E 3 - M A R C H 1996_ O_ P A R T M A R K IN G D E T A IL -S S ' I t ” SOT23 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Drain-Source Voltage Vos 50

BSS138

Contextual Info: S E M I C O N D U C T O R tm BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N -C h a n n e l e n h a n c e m e n t m o d e field effect transistors a re produced using Fairchild's proprietary, high cell density, D M O S technology. T h e s e products

LM78L05acza

Abstract: D0805 C11B E97S ZMR500 122tp1 DL4002MSCT db9f BAV99 BSS138
Contextual Info: 1 2 H1:2 GND STAT 3 H1:3 OUT 4 H1:4 BG 5 H1:5 OBJ 6 H1:6 4.7uF/25V P5:1 SDA 2 CS 3 SCK 4 OBJ 5 P5:3 0.1uF VCC BG CONN6M P5:2 VCC 22uF/6.3V 1 TP6 TP7 TP8 C5 K P5:4 A OBJ RS1 V D D 0805 Q2 CHG BSS138 7 1 5 9 3 XT1 XT2 G 1 VO 1 3 E C S C12 7 0805 C14 14 7 13