BSR14 SOT23 Search Results

BCW65C

Abstract: BSR14
Contextual Info: BSR14 BSR14 C E SOT-23 B Mark: U8 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics. Absolute Maximum Ratings* Symbol

IC 7403

Contextual Info: BSR14 BSR14 C E SOT-23 B Mark: U8 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics. Absolute Maximum Ratings* Symbol

BSR14 SOT23

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BSR13; BSR14 NPN switching transistors Product specification Supersedes data of 1997 Apr 22 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN switching transistors BSR13; BSR14

sot23 marking u8

Abstract: BSR15 BSR16 BP317 BSR13 BSR14
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D088 BSR13; BSR14 NPN switching transistors Product specification Supersedes data of 1997 Apr 22 1999 Apr 15 Philips Semiconductors Product specification NPN switching transistors BSR13; BSR14 FEATURES PINNING

BSR13

Abstract: BSR14 BSR15 BSR16 transistor npn U8
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product specification Supersedes data of 1999 Apr 15 2004 Jan 13 Philips Semiconductors Product specification NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA

TRANSISTOR SMD MARKING CODE LF

Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23 bsr14 nxp transistors Standard Marking TRANSISTOR SMD letter CODE PACKAGE SOT23 smd marking NXP date code marking BSR14 SOT23 semiconductors replacement guide LF marking code smd transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA

BSR13

Contextual Info: DISCRETE SEMICONDUCTORS DAT BSR13; BSR14 NPN switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 PINNING FEATURES • High current max. 800 mA PIN

bsr13

Abstract: bsr14
Contextual Info: BSR13 BSR14 SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking BSR13 U7 BSR14 U8 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENTS ARE RESPECTIVELY

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BSR13 = U7 BSR14 = U8 Pin configuration 1 = BASE 2 = EMITTER

BSR13

Abstract: BSR14 VBSR13 BSR13R U8 marking
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BSR13 = U7 BSR14 = U8 PACKAGE OUTLINE DETAILS

sot23 marking u8

Abstract: VBSR13 sot-23 marking U7 BSR13R BSR14 equivalent BSR13 BSR14
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BSR13 = U7 BSR14 = U8 Pin configuration 1 = BASE 2 = EMITTER

BSR14 SOT23

Abstract: bsr14 bsr13 BSR14,215
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA

BSR14

Abstract: BSR13 BSR15 BSR16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA

BCW65C

Abstract: BSR14 SOT23 NE
Contextual Info: BSR14 BSR14 C E SOT-23 B Mark: U8 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics. Absolute Maximum Ratings* Symbol

BSR13R

Contextual Info: BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS kacje intended fo r sw itch in g anrl linear a p p ii cations in th ic k and th in -fiim circuits. Q U IC K KE.F ERF.NCF: D A T A -BSR13 C o lk.T ior base voltaye ¡open e m itte r BSR14 v CB0 max. 60 75

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BSR13 = U7 BSR14 = U8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

BSR14

Abstract: BSR13 IC ti 072 sot23 marking u8
Contextual Info: r Z Z SGS-THOMSON Ä 7 # MO IHimi<gra M gS BSR13 BSR14 SMALL SIGNAL NPN TRANSISTORS Type Marking BSR13 U7 BSR14 U8 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking

U8p TRANSISTOR

Abstract: BSR14 BSR13 u8p Transistor MARKING
Contextual Info: Philips Semiconductors Product specification NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Switching and linear applications.

Contextual Info: bb53T31 DOESSbT bfl4 « A P X N AUER PHILIPS/DISCRETE BSR13 BSR14 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits.

bf255

Contextual Info: BSR14 NPN General Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. • Sourced from Process 19. • See BCW65C for characteristics. C E SOT-23 B Mark:U8 Absolute Maximum Ratings*

Mark T92

Contextual Info: This Pro Electron Series Material cr Ln CD b-1 b-1 ÜJ Pro Electron Surface Mount Bipolar Devices continued V *CES Device No. (SOT-23 Mark) a Copyrighted o □ -C a BSR14 (U8) Ln ID Case Style TO-236 (49) V 1 * ' ces ^C E O CBO (V) * *CBO (V) Min Min (nA)

BSR14

Abstract: BSR13 transistor npn U8 sot23 marking u8
Contextual Info: Transistors IC SMD Type NPN Switching Transistors BSR13,BSR14 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low voltage max. 40 V . 1 0.55 High current (max. 800 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

BSR13

Abstract: BSR14 CBO10
Contextual Info: 711 G a e b 0 0 ^ 5 3 5 2 bfl PHIN BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTO RS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits. QUICK R EF ER E N C E DATA