BSP MOSFET Search Results

BSP78

Abstract: TRANSISTOR BSP 149 scr tic 118d tic 118d lamp 12v 21w HL 941 BSP75 bts933
Contextual Info: HL Application Note BSP 76, BSP 77, BSP 78, BTS 118D, BTS 134D, BTS 142 D1 The second generation of the HITFET family offers low RDS on and restart function in the SOT223 and D-Pak with low-input current drive Benno Köppl Introduction The age of Siemens Smart Power low-side switches began with the introduction of the

4142N

Abstract: bsp mosfet BSP550
Contextual Info: Deltasheet BTS 4142N – BSP 550 Smart Power High-Side-Switch One Channel: 1 x 200mΩ Features • Short-circuit protection • Current limitation Product Summary Overvoltage protection Operating voltage On-state resistance Vbb AZ Vbb(on) RON BSP 550 48

BSP 450

Contextual Info: Deltasheet BTS 4141N – BSP 450 Smart Power High-Side-Switch One Channel: 1 x 200mΩ Features • Short-circuit protection • Current limitation Product Summary Overvoltage protection Operating voltage On-state resistance Vbb AZ Vbb(on) RON BSP 450 48

pin diagram of bts 149

Abstract: BSP 76 "pin compatible" ANPS027E 13450M bsp mosfet
Contextual Info: HL Application Note BSP 75, BSP 75A Monolithic Smart Power Low-Side Switch extends the HITFET family in the low power area Claus Preuschoff Introduction The introduction of the TEMPFET® TEMperature Protected FET was the start of the era of Siemens Smart Power low side switches. The integration of further protective functions,

fully protected p channel mosfet

Abstract: BSP 76 "pin compatible" bsp mosfet POWER SUPPLY BTS SIEMENS BSP 78 HITFET Car Battery 12V short circuit
Contextual Info: HL Application Note BSP 75, BSP 75A Monolithic Smart Power Low-Side Switch extends the HITFET family in the low power area Claus Preuschoff Introduction The introduction of the TEMPFET® TEMperature Protected FET was the start of the era of Siemens Smart Power low side switches. The integration of further protective functions,

Contextual Info: BSP 129 SIPMOS N Channel MOSFET 32E D • fl23b320 GG171Q3 5 « S I R Preliminary Data • • • • • SIEMENS/ SPCL-, SEMICONDS SIPMOS - depletion mode Drain-source voltage Continuous drain current Drain-source on-resistance Total power dissipation Vis = 240V

Contextual Info: BEE D • ¿123b32Q 00170^3 b « S I P T'3 SIPMOS P Channel MOSFET SIEMENS/ SPCL-, SEMICONDS BSP 92 _ Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vfcj = -240V • Continuous drain current / o = -0.18A • Draln-source on-resistance

BSS87

Abstract: BSP315 SOT223 BSP171 BSS125
Contextual Info: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP 125 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSP297 BSP298 BSP299 BSP315 BSP316 BSP317

Contextual Info: 32E D m fl23b320 0017060 2 H S I P SIPMOS N Channel MOSFET f * ' 5*1 ^ BSP 89 SIEMENS/ SPCL-, SEMICONDS Preliminary Data • SIPMOS - enhancement mode • Draln-source voltage • Continuous drain current • Draln-source on-resistance • Total power dissipation

Contextual Info: BSE I • ÖS3b3Ea CJ017114 T SIPMOS N Channel MOSFET ISIP r - t f - o s - BSP 296 SIEMENS/ SPCL-. SEMICONDS • SIPMOS - enhancement mode • Draln-source voltage Vfo = 100V • Continuous drain current / „ = 1.0A • Drain-source on-resistance • Total power dissipation

60nag

Contextual Info: SIPMOS N Channel MOSFET BSP 88 Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vfcs = 240V • Continuous drain current I o = 0.29A • Drain-source on-resistance • Total power dissipation flbs on = 8.0Q P0 = 1.5W Type Marking Ordering code for

BSP 452

Abstract: pumpe SIEMENS MOSFET application mosfet 452
Contextual Info: SIEMENS Mini PROFET BSP 452 MiniPROFET • • • • • • • • • • • • High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Switching inductive load

n mosfet depletion 600V

Contextual Info: SIPMOS N Channel MOSFET BSP 135 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current Vfes = 600V I B = 0.100A • Drain-source on-resistance • Total power dissipation flDS on = 60Q P0 = 1,5W ( Type Marking Ordering code for

Contextual Info: • B535b05 Q0cÎS6ci4 S4b SIEMENS Mini PROFETÒ BSP 550 MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load

BSP450

Abstract: GGfllb3b Q67000-S266
Contextual Info: ô23Sb05 GGfllbBti ET? SIEM EN S BSP 450 MiniSmart • • • • • • • • • • • • High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Switching inductive load

4142N

Contextual Info: Deltasheet BTS 4142N – BSP 550 Smart Power High-Side-Switch One Channel: 1 x 200mΩ Ω Features • Short-circuit protection • Current limitation • Overload protection Product Summary Overvoltage protection Operating voltage On-state resistance Vbb AZ

Q67000-S311

Contextual Info: Mini PROFET BSP 550 MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load • Clamp of negative output voltage with inductive loads

Q67000-S266

Abstract: MOSFET 450
Contextual Info: Mini PROFET BSP 450 MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load • Clamp of negative output voltage with inductive loads

BSP 300 "pin compatible"

Abstract: PROFET Q67000-S271 mosfet 452
Contextual Info: Mini PROFET BSP 452 MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load • Clamp of negative output voltage with inductive loads

Contextual Info: 32E D • Ö23b32ü 0017107 s m s i p BSP 149 SIPMOS N Channel MOSFET T - 3 *7 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current • Drain-source on-resistance • Total power dissipation Type M arking O rdering code for

BSP-125

Abstract: bsp mosfet S654 diode
Contextual Info: SIPMOS N Channel MOSFET BSP 125 Preliminary Data • SIPMOS - enhancem ent m ode • D rain-source voltage • C ontinuous drain current Vbs = 600V l D = .110A • D raln-source on-reslstance • Total pow er dissipation flbs on> = 4 5 0 PD = 1.5W Type M arking

Contextual Info: BSP 92 SIPMOS P Channel MOSFET Preliminary Data • SIPMOS - enhancem ent m ode • D rain-source voltage Vfes = -240V • C ontin uou s drain current / D = -0.18A • D rain-source on-resistance ffcs on = 2 0 0 • Total pow er dissipation PD = 1.5W t Type

Contextual Info: BEE D • Ö23b320 Q017124 2 ■ SIP SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS • • • • • BSP 315 T ~ 2 * 1 'O S ' SIPMOS - enhancement mode Drain-source voltage = -50V Continuous drain current l 0 - -1.0A Draln-souros on-reslstance Ros<on> = .9 5 0

Contextual Info: 3SE D • Ö53b320 Q017QÛ3 3 Hi SIP SIPMOS N Channel MOSFET T - 2 1 ' -O S ' SIEMENS/ SPCLi SEMICONDS BSP 88 Preliminary Data • • • • • SIPMOS - enhancement mode Drain-source voltage Vos = 240V Continuous drain current l B = 0.29A Drain-source on-resistance