BSOB Search Results

Contextual Info: 83C198/80C198, 83C194/80C194 16-BIT CHMOS MICROCONTROLLER 83C198 — 8 Kbytes of Factory Mask-Programmed ROM 80C198 — ROMIess Automotive • Extended Automotive Temperature Range: -40°C to +125°C Ambient ■ 8-Bit External Bus ■ 232 Byte Register File

Contextual Info: HITACHI/ {LINEAR DEVICES} 2bE t • 0010150 5 HA11513- 'T-17‘Q7- \3 5 Channel Video Switch Ordering Information The HA11513 is a bipolar LSI for video switch, The HA11513 is designed for switching o f video signals. Features Type No. Package

Contextual Info: NEC n P D 70208 V 40 8 /1 6-Bit Microprocessor: High-Integration, CMOS NEC Electronics Inc. Description The ^PD70208 (V40'“ ) is a high-performance, lowpower 16-bit microprocessor integrating a number of commonly used peripherals to dramatically reduce the

inductosyn

Abstract: IRDC1730 Resolvers multibus RESOLVER MCI1794
Contextual Info: A N A LO G D E V IC E S MULTIBUS Compatible Multi-Channel Interface MC11794 FEA TU RES Complete Three-Channel Tracking Inductosyn™/ Resolver-to-Digital Converter 12-Bit Angular Resolution 12-Bil: Pitch Counter I/O or Memory Mapped Compatible with Both 8- and 16-Bit M ULTIBUS

M514400

Abstract: m5144 hitachi 12.1 hm514400b M514400BS M514400B
Contextual Info: HM514400B/BL Series 1 ,0 4 8 ,5 7 6 -w o rd x 4 -b it D y n a m ic R a n d o m A c c e s s M e m o ry T he H itach i H M 514400B is a CM O S dynam ic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 w o rd s x 4 b its. HM 514400B has realized higher density, higher perform ance and various functions by employing

Contextual Info: MAAP-011106 Power Amplifier, 71 - 86 GHz Preliminary - Rev. V1P Features •           Chip Device Layout 4 Stage Power Amplifier for E Band 20 dB Gain 15 dB input and output match 25 dBm saturated output power 30 dBm OIP3 Variable gain with adjustable bias

siemens 4261-2

Abstract: a4s smd transistor smd transistor A4S smd transistor zd MARKING SMD PNP TRANSISTOR FR TRANSISTOR smd FQ siemens 4261 smd transistor marking 327 siemens automotive air temperature sensors TLE 4271 G
Contextual Info: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4261-2 Preliminary Data Bipolar 1C Features • • • • • • • • • • • • • • High accuracy 5 V + 2% Very low-drop voltage Very low quiescent current Low starting-current consumption Proof against reverse polarity

Contextual Info: M54HC4060 M74HC4060 / = T SGS-THOMSON l^D ^ Q i[L[l(g¥ (Q)KilO{gi 14-STAGE BINARY COUNTER/OSCILLATOR • HIGH SPEED fM AX = 6 0 MHz (TYP) at V C C = 5 V ■ LOW POW ER DISSIPATION lCC = 4 /lA (MAX.) at TA = 2 5 °C ■ HIGH NOISE IM M U NITY V n i h = V n il = 2 8 % VC C (MIN.)

lg washing machine circuit diagram

Abstract: d70108 D70116 PD70108HCZ-10 d70108hg PD70108H IC-3552 ITT Semiconductors 4L-SP d7011
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT j U P D 7 1 8 H , 7 1 1 6 H V20HL , V30HL™ 16/8, 16-BIT MICROPROCESSOR DESCRIPTION The /¿PD70108H V20HL and ¿¿PD70116H (V30HL) are CMOS 16-bit microprocessors developed from the ¿¿PD70108(V2G™) and^iPD70116{V30™}. It offers higher processing speed and lower power consumption than

Contextual Info: ^ E D I B^ctronlc D««lgnc Inc. . Â IM IO I D iF O M Â T M Features TheEDI82136Cisa1,179,648bitAsynchroriousmemofy core with transparent address and enable latches in the advanced peripheral circuitry. This device is ideally suited for all x32 and x36 bit wide, high-performance memory sub­

Contextual Info: HITACHI/ LOGIC/ARRAYS/HEH S1E J> MM1bED3 DGlRlfib 577 IHIT2 HB56D136B/S Series-1,048,576-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56D136B/SB/BR/SBR/BS/SBS is a 1M x 36 dy­ namic RAM module, mounted 8 pieces of 4 Mbit DRAM

Contextual Info: HITACHI/ LOGIC/ARRAYS/ME 11 S1E D . I B HM5116100L SGNGS MMTLic?[]3 DD1B677 743 • H I T S Product Preview Low Power Version 16,777,216-Word x 1-Blt Dynamic Random Access Memory ■ DESCRIPTION HM5116100U Series The Hitachi HM5116100 is a CMOS dynamic RAM organized 16,777,216 words x

RRUS 01 B1

Abstract: RRUS 32 b2 RRUS 01 B2 ocular lcd e purse TS68930 TS68931 TSSB831 RRUS 01 3BS1
Contextual Info: T S 6 8 9 3 0 • T S 68931 ADVANCE INFORMATION HMOS2 The T S 6 8 9 3 0 /1 Programmable Signal Processor is a high-speed general purpose signal and arithm etic processor w ith on-chip memory, m ultiplier, ALU, accumulators and I/O s . It is organized in

Contextual Info: IBM13M64734HCA 64M x 72 T w o -B an k R eg istered /B u ffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM • Performance: i -260 CL=2 i -360 CL=3 i -360 CL=2 !, . . •. :. Units i

Contextual Info: T R I Q COMPUTING AND U I N T S E M I C O N D U T1 T 0 R , I N C NETWORKING GA1110E Figure 1. Block Diagram VDD C CLKIN FBIN S1 SO TO GND Data Sheets Multi-Phase Clock Buffer Features TriQuint’s GA1110E is a low-skew TTL-level clock buffer chip with multi-phase clock

Contextual Info: SONY CXA2021S l2C BUS Sound Processor for TV Description The CXA2021S is a bipolar IC developed as an l2C BUS control sound processor for TV. This IC implements surround, tone control, balance, volume, mute and AGC functions. Features • l2C BUS control • The AGC circuit is adopted to absorb volume

SMA6800M

Abstract: SMA6820 sma6800 SMA6820MP SMA6823MP sanken
Contextual Info: Product Information High Voltage SMA6800M Series Driver IC for Small Brushless DC Motor Applications By Seiichi Funakura, Yasuhiro Iwasa, and Hitoshi Ohdachi Sanken Electric Co., Ltd. Abstract Conventional single-chip IGBT-based driver ICs for lowcapacity motors have drawbacks such as large switching

Contextual Info: HB526R864ESN-10H/10/12 4,194,304-word x 64-bit Non Parity x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-671A (Z) Rev. 1.1 Feb. 20, 1997 Description The HB526R864ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R864ESN is

Contextual Info: 3 4 DRAWI NG THIS MA D E DRAWING IN 15 THIRD ANGLE UNPUBLISHED COPYRIGHT PROJECTION RELEASED 19 BY ANP FOR PUBLICATION INCORPORATED. ALL I NTERNATI ONAL 19 RIGHTS RESERVED. D C 092 A-A SECTION SCALE 080 A 070 MAX 20:1 S E C T I ON SCALE B - B 20:1 MA X

Contextual Info: MAAP-011106 Power Amplifier, 71 - 86 GHz Rev. V1 Features •           Chip Device Layout 4 Stage Power Amplifier for E Band 20 dB Gain 15 dB input and output match 25 dBm saturated output power 30 dBm OIP3 Variable gain with adjustable bias

Contextual Info: HM51W18165I Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-755A Z Rev. 1.0 Mar. 10,1997 Description The Hitachi HM51W18165I is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W18165I offers

Contextual Info: HITACHI/ LINEAR DEVICES 2bE D • H A 1 3 1 1 7 - T-74-05-0/ 14 W BTL Audio Power Amplifier At 13.2 V to 4 12 load, the HA13117 provides an output power of 14 W with 10 % distortion. It is easy to design as this IC employs internal each protection circuit and the new small package.

burglar alarm system pdf abstract

Abstract: SMA6820 SMA6800M sma6800 SLA6800 BSOB SANKEN brushless motor samsung AIR CONDITIONER Brushless DC (BLDC) Single-Chip Motor Drive IC fire alarm abstract
Contextual Info: Product Information High Voltage SMA6800M Series Driver IC for Small Brushless DC Motor Applications By Seiichi Funakura, Yasuhiro Iwasa, and Hitoshi Ohdachi Sanken Electric Co., Ltd. Abstract Conventional single-chip IGBT-based driver ICs for lowcapacity motors have drawbacks such as large switching

Contextual Info: H M 5 1 W 4 8 0 0 A /A L Preliminary S e r ie s 52 4,28 8-w o rd X 8-b it D y n a m ic R and o m A c ce ss M em ory T he H ita c h i H M 5 1 W 4 8 0 0 A /A L a re C M O S dynamic RAM organized as 524,288-word x 8-bit. HM 51W 4800A/AL have realized higher density,