BSM100GAL120D Search Results

transistor k30

Abstract: 600v 100a BSM100GAL120DLC
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GAL120DLC K Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

transistor 600v 25 a

Abstract: BSM100GAL120DLC
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GAL120DLC K vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

transistor k30

Abstract: BSM100GAL120DLC
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GAL120DLC K Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

Contextual Info: Technische Information / technical information BSM100GAL120DLCK IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values " # $ % % " 1 % 1, 9 " $ : " > ? > % % # $ : " &' *+, -./0 &. ) 2 +,3 &'( ) * +,

m542h

Abstract: BSM100GAL120DLCK
Contextual Info: Technische Information / technical information BSM100GAL120DLCK IGBT-Module IGBT-modules IGBT-Brems-Chopper / IGBT-brake-chopper Höchstzulässige Werte / maximum rated values "# # $ 1 # 1+ $ < # , = < "# # 8 # %&' *+ ,-./ %- ( *+2 %&' ( 0) *+ %- ( )*+2 %&' ( 0) *+

Contextual Info: BSM100GAL120D Transistors Chopper Transistor Military/High-RelN No. of Units Per Package V BR CEO (V)1.2k V(BR)CBO (V) I(C) Max. (A)100 Absolute Max. Power Diss. (W)1.0k I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

transistor k30

Abstract: BSM100GAL120DLC diode bzw 06
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GAL120DLC K Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

BSM100GAL120DLC

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GAL120DLC K Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

600v 100a

Abstract: BSM100GAL120DLC
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GAL120DLC K Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

BSM100GAL120DN2

Abstract: C67076-A2012-A70
Contextual Info: BSM 100 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 100 GAL 120 DN2 1200V 150A IC Package Ordering Code HALF BRIDGE GAL 2 C67076-A2012-A70

POWER SUPPLY BOARD 94V0

Abstract: IGBT moduls 600A FS450R17KE3 eupec igbt FF300R12KE3 EUPEC DD 76 N 16 L 12K eupec igbt FF300R12KE3 FZ800R12KF4 eupec dd 76 n 12 l eupec fz600r12ke3
Contextual Info: EiceDRIVER 2ED300C17-S 2ED300C17-ST Dual IGBT Treiber für Medium und High Power IGBTs Datenblatt und Applikation prepared by : M.Hornkamp date of publication: 16.05.2003 approved by :Reg.-Nr. 064-02 revision: 3.0 SN: 23925 Status: SN:24816 preliminary

IGBT cross reference semikron eupec

Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

BSM100GAL120DN2

Abstract: C67076-A2012-A70
Contextual Info: BSM 100 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 100 GAL 120 DN2 1200V 150A IC Package Ordering Code HALF BRIDGE GAL 2 C67076-A2012-A70

Contextual Info: BSM 100 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 100 GAL 120 DN2 1200V 150A IC Package Ordering Code HALF BRIDGE GAL 2 C67076-A2012-A70

IGBT cross reference semikron eupec

Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

10k resistor-datasheet

Abstract: eupec fz600r12ke3 2ED300C17-S FS450R17KE3 FF300R12KE3 bsm150gt120dn2 AC to DC smps circuit diagram eupec fz600r12 FF1200R12KE3 eupec igbt FF300R12KE3
Contextual Info: EiceDRIVER 2ED300C17-S 2ED300C17-ST Dual IGBT Driver for Medium and High Power IGBTs Datasheet and Application Note Prepared by : M.Hornkamp Date of publication: 16.05.2003 Approved by: Reg.Nr.064-02 Revision: 3.0 SN: 23925 Status: SN:24816 preliminary

eupec module igbt

Contextual Info: euoec F BSM100 G AL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 100 GAL 120 DN2 1200V 150A h Package Ordering Code HALF BRIDGE GAL 2

bsm25gp120 b2

Abstract: FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3
Contextual Info: IGBT High Power Modules 1200 VCES 1200 VCES Type * Dual modules IH1/4 IH7 Single modules Standard 2. Generation FF400R12KF4 FF600R12KF4 FF800R12KF4 Low Loss 2. Generation FF400R12KL4C FF600R12KL4C FF800R12KL4C IGBT3 ◆ FF600R12KE3 ◆ FF800R12KE3 ◆ FF1200R12KE3

FS450R12KE3 S1

Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
Contextual Info: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.

BSM25GP120 b2

Abstract: BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 10:33 Uhr Seite 7 EasyPIM 600 V-1200 V Type VCES V Low Loss 2. Generation ◆ FB6R06VL4 ◆ FB10R06VL4 FB10R06KL4 FB10R06KL4G FB10R06KL4G_B1 FP10R06KL4 FP10R06KL4_B3 FB15R06KL4 FB15R06KL4_B1 FP15R06KL4 FB20R06KL4 FB20R06KL4_B1