BSM 151 Search Results

bsm 50 Gb 120 IGBT

Abstract: igbt BSM 300 GA 120 GAL 200 gb BSM 15 GB BSM254F C67076-A2101-A2 C67076-A2007-A2 C67076-A2507-A52 100/D
Contextual Info: Ordering Codes SIEM ENS SIMOPAC Modules Ordering Code Page BSM 101 AR C67076-S1018-A2 17 BSM 111 AR C67076-S1013-A2 24 BSM 121 AR C67076-S1014-A2 31 BSM 141 C67076-A1010-A2 38 BSM 151 C67076-A1004-A2 44 Type Single Switches BSM 151 F C67076-A1050-A2 50 BSM 181

bsm 50 Gb 120 IGBT

Abstract: BSM181
Contextual Info: Selection Guide SIEM ENS SIMOPAC Modules Type ^D S V I 1A ¡0 ^ th J C K/W 1 ^ * to t |w m il Package Page Figure 1 17 ^ D S o n Single Switches BSM 101 AR 50 200 <0.18 700 3 BSM 111 AR 100 200 <0.18 700 8.5 1 24 BSM 121 AR 200 130 <0.18 700 20 1 31 BSM 141

bsm10gd100dn1

Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
Contextual Info: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2

Contextual Info: SIEMENS SIMOPAC Module BSM 151 VDS = 500 V I D =48 A R DS on = 0.12 Q • • • • • • Power module Single switch N channel Enhancem ent mode Package with insulated metal base plate Package outline/C ircuit diagram : 11) Type O rdering Code BSM 151

BSM 204-A

Contextual Info: SIEM ENS SIMOPAC MOSFET Modules BSM 151 C BSM 151 R Vas = 500 V l0 = 48 A ^DS(on) = 0.12 Ö • • • • • • Power module Single switch N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1a ') Type Ordering code

SIMOPAC Module BSM 151 F

Abstract: C67076-A1004-A2
Contextual Info: SIMOPAC Module BSM 151 VDS = 500 V ID = 48 A R DS on = 0.12 Ω ● ● ● ● ● ● Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type Ordering Code BSM 151 C67076-A1004-A2

FR 151 diode

Abstract: HJC.1 siemens mosfet BSM 50 diode fr 207
Contextual Info: SIEMENS SIMOPAC MOSFET Modules VDS lD BSM 151 F C BSM 151 FR = 500 V = 56 A ^DS(on) = 0.11 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a 1)

FR 151 diode

Abstract: SiEMENS PM 350 98 SIMOPAC Module BSM 151 F C67076-A1050-A2 siemens 350 98 BSM151F siemens 350 BSM151 V103 SiEMENS EC 350 98 0
Contextual Info: 47E » SIEMENS • ÔEBSbDS SIEMENS DOEbMMI 3 ■ SIE6 AKTI ENGESELLSCHAF - r - 3 cM 5 SIMOPAC Modules Vas I = 500 V 56 A = d Ä D S o n • • • • • • • BSM 151 F BSM 151 FR = 0 .1 1 fl Power module Single switch FREDFET N channel Enhancement mode

Contextual Info: ê235bOS 0Û20c]a4 M El SIEG SlEIVli SIEMENS AKTIENGESELLSCHAF M7E D ; T - - 3 7 -3 Ì BSM 151 F C BSM 151 FR SIMOPAC MOSFET Modules Vos Id = 500 V = 56 A ^ D S (o n ) = 1 Q • Pow er m odule • Sin gle switch • FREDFET • N channel • Enhancem ent m ode

siemens bsm 284 f

Abstract: siemens bsm 181 AR C67076-A1152-A2 C67076-S018-A2 siemens bsm 101 AR siemens bsm 181 BSM181
Contextual Info: SIEMENS SIMOPAC*Leistungsmodule Typ Type SIMOPAC Power Modules ^DS max ^D(max) fithJC P lot ^DS(on)max V A K/W W m ii Bestellnummer Ordering code Bild Figure Single switches Einzelschalter BSM 101 AR 50 200 0.18 700 3.0 C67076-S018-A2 26 BSM 111 AR 100 200

T39 diode

Contextual Info: flSBSbOS ODSDÔTÔ 2 HI SIE6 SIEMENS AK TIE NGESELLSC HAF S IE iV 1 E i\S S 4?E D "T -3 9 -3 Î SIMOPAC MOSFET Modules A = 500 V à 48 A ^ D S o n ) a 0.12 Q VM • • • • • • BSM 151 (C) BSM 151 R Power module Single switch N channel Enhancement mode

BSM 225

Abstract: FR340 BSM 214 A F-1000-4-8 siemens bsm 181 FR560 BSM224A siemens bsm 284 f bsm681f BSM181C
Contextual Info: SIEMENS AKTIENGESELLSCHAF M7E J> • flE3SbDS G 0 e b 3 1 b b «SIEG Leistungsmodule / Power Modules SIMOPAC Type ^DS max fo(max) ^ th J C P,o, ^DS(on)m ax V A K/W w mi2 Fig. Einzelschalter Single switches □ BSM 111 AR (C) 100 200 0.18 700 8.5 19 BSM 121 AR (C)

BSM50GB100D

Abstract: BSM50GB100 50GB100D 50GB 100D
Contextual Info: SIEMENS BSM 50 GB 100 D IGBT Module Preliminary Data VCE = 1000 V /c =2x50 A • • • • • Power m odule H alf-bridge Including fast free-w heel diod es Package with insulated m etal base plate C ircuit diagram : Fig . 2 b 1 Type Ordering code BSM 5 0 G B 100D

Contextual Info: SIEMENS BSM 151 F SIMOPAC Module V DS / □ Ä • • • • • • • = 500 V = 56 A DS on = 0 . 1 1 Power module Single switch FREDFET N channel Enhancem ent mode Package with insulated metal base plate Package outline/C ircuit diagram : 11) Type

transistor fp 1016

Abstract: 32P4B M51647SP 001B Mitsubishi
Contextual Info: • MITSUBISHI LINEAR ICs bSM'íñSb 001bô33 Ô7Û ■ H I T S M51647SP, FP MITSUBISHI ELEK LINEAR VIDEO SW ITC H DESCRIPTION The M 51 6 4 7 S P , FP is a semiconductor integrated circuit that PIN CONFIGURATION (TOP VIEW) performs video signal procesing fo r VCR s using the V H S system.

BSM10GD100

Abstract: BSM10GD100D
Contextual Info: SIEMENS IGBT Module BSM 10 GD 100 D Preliminary Data VCE = 1000 V / c = 6 x 1 1 A at Tc = 25 "C / c = 6 x 1 0 A at r c = 40 C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate • Package outlines/Circuit diagram: 6a1

Contextual Info: « M F M E N S SI MO PAC MOSFET Module VDS lD ^D S o n • • • • • • • BSM 294 F = 1000 V =2x18 A = 0.63 Q Power m odule H alf-bridge FREDFET N channel E nhancem ent mode Package with insulated metal base plate C ircuit diagram : Fig. 2 a 1)

BSM10GD100D

Abstract: BSM10GD100 siemens igbt btb 148 600 GGM5 transient Diode bge
Contextual Info: bO E D • ÔE3SLiQS G G M 5 7 Ö 4 SIEMENS ^ 7 SIEMENS «SIEG AKTIENGESELLSCHAF BSM 10 GD 100 D IGBT Module Preliminary Data V CE = 1000 V I c = 6 x 11 A at T c = 25 C / c = 6 x 1 0 A a t 7'c = 40 C • • • • • Power m odule 3-phase full bridge Including fast free-wheel diodes

A1015

Abstract: BSM151 C67076-A1004-A2 FR 151 diode
Contextual Info: 4 7 E T> SIEMENS ñ S I E M E 2 3 S N S b ü A S K T I D G 2 b 4 4 3 E N 6 E S E L 5 L S I S C H A I F ' T ' - 3 C \ - \£ > SIMOPAC Modules V I R • • • • • • ds d OS<on BSM151 BSM 151 R =5 0 0 V =48 A = 0 .1 2 Q Pow er module Single switch

Contextual Info: MITSUBISHI R F PO W ER M ODULE bSM^fiZT 0 0 1 7 1 LjS bMG • M57727 14 4-1 4 8 M H Z, O U TLIN E DRAW ING Dimensions in mm 12.5V, 37W, SSB MOBILE RADIO B L O C K D IAGRAM PIN : Pin : RF INPUT ©VCC1 : 1st. DC SU PPLY ®VBB : BASE BIAS S U PPLY ® VCC 2 : 2nd. DC S U PPLY

Contextual Info: bSM'ìflZt □ D lb c104 ^5fl • M I T E M ITSU B ISH I INTEGRATED CIRCUIT M64080GP I MITSUBISHI ELEK LINEAR 4 1 0 M H z 2 S Y S T E M 1CHIP P L L FREQUENCY S Y N T H E S IZ E R DESCRIPTION The M 6 4080 G P is a 4 1 0 M H z band 2 system 1 chip PLL fre­

Contextual Info: 47E D SIEM ENS • fl£?35bG5 G Ü 5 b S 4 7 3 « S I E G SIEM EN S A K T I E N 6 E S E L L S C H A F T~25^n SIMOPAC Module V ds BSM 681 F = 800 V 5.3 A R DS on = 1 .9 £2 I d • • • • • • • = 6 x Power module 3-phase full-bridge FREDFET N channel

siemens igbt BSM 25GD 100D

Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
Contextual Info: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11

BUP101

Abstract: BTS412A buz 607 BTS 304 BUZ 324 BSM181C BTS 413 bsm681f Q62702-S616 62702-S393
Contextual Info: Bestellnummern/Ordering Codes Type Ordering code BRT 11 H BRT 11 M B R T 12H BRT 12 H Option 1 BRT 12 H (Option 6) BRT 12 H (Option 7) BRT 12 H (Option 1+6) BRT 12 H (Option 1+7) BRT 12M BRT 1 3 H BRT 1 3 M BRT 21 H BRT 21 M BRT 22 H BRT 22 H (Option 1)