BSL 100 Search Results

MSM51V16800BSL

Contextual Info: ¡ Semiconductor MSM51V16800B/BSL ¡ Semiconductor MSM51V16800B/BSL E2G0074-17-41 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800B/BSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16800B/BSL achieves high integration, high-speed operation, and

MSM51V17805BSL

Contextual Info: ¡ Semiconductor MSM51V17805B/BSL ¡ Semiconductor MSM51V17805B/BSL E2G0079-17-41 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17805B/BSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate

MSM51V18165BSL

Abstract: SOJ42-P-400-1
Contextual Info: ¡ Semiconductor MSM51V18165B/BSL ¡ Semiconductor MSM51V18165B/BSL E2G0087-17-41 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165B/BSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate

MSM51V16805BSL

Contextual Info: ¡ Semiconductor MSM51V16805B/BSL ¡ Semiconductor MSM51V16805B/BSL E2G0077-17-41 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16805B/BSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate

MSM514260

Abstract: SM5142
Contextual Info: • O K I S em iconductor MSM5 14 2 6 0 B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM514260B/BSL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514260B /BSL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. ITie MSM514260B/BSL is

MSM54

Abstract: MSM54V16258 N1130
Contextual Info: O K I Semiconductor MSM54V16258B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V16258B/BSL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM54V16258B/BSL achieves high integration,high-speed operation,and low-power

Contextual Info: O K I Semiconductor MSM54V16258B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V16258B/BSL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM54V16258B/BSL achieves high integration,high-speed operation,and low-power

SS-L70

Contextual Info: O K I Semiconductor MSM51 4 2 6 5 B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE MODE TYPE DESCRIPTION The M SM 514265B/BSL is a new generation Dynamic RAM organized as 262,144-w ord x 16-bit configuration. The technology used to fabricate the M SM 514265B/BSL is OKI’s CMOS silicon gate process

MSM514265

Abstract: MSM514265BSL
Contextual Info: O K I Semiconductor_ MSM514265B/BSL_ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The M SM 514265B/BSL is a 262,144-w ord x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The M SM 514265B/BSL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The M SM 514265B/BSL is

sanyo OS-CON SH

Abstract: nippon capacitors 33S3 5.0s3f F20WV
Contextual Info: Output Voltage 1.8V-3.3V, 3V-5V Ultra High Efficiency 95% Ultra Small Size, Step-Down Non-lsolated Type DC-DC Converter l5Watt BSl Series BSl Series is an ultra small size, light weight, and non-isolated type step-down DC-DC converters, which has achieved ultra high efficiency 91 % - 95%

Contextual Info: O K I Semiconductor MSM514265B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE MODE TYPE D ESC R IP T IO N T h e M SM 5 1 4 2 6 5 B/BSL is a n e w generation D yn am ic R A M org an ized as 262,144-word x 16-bit configuration. T h e technology used to fabricate the M SM 5 1 4 2 6 5 B/BSL is O K I's C M O S silico n gate process

MSM51V18165BSL

Abstract: S0j42-P-400-127 msm51v18165b
Contextual Info: O K I Semiconductor MSM5 1V18 1 65B/BSL_ E2G 0087-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V18165B/BSL is a 1,048,576-word x 16-bit dynamic RAMfabricated in Oki's silicon-gate CMOS technology. The MSM51V18165B/BSL achieves high integration, high-speed operation, and

SOJ28-P-300-1

Abstract: MSM51V16800B MSM51V16800BSL
Contextual Info: O K I Semiconductor MSM5 1V16800B/BSL E2G0074-17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V16800B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16800B /B SL achieves high integration, high-speed operation, and

514260b

Abstract: 514260 M5M51426 msm514260b
Contextual Info: O K I Sem iconductor MSM514 2 6 0 B /B S L 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M 5M 514260B/BSL is a new generation Dynamic RAM organized as 262,144-w ord x 16-bit configuration. The technology used to fabricate the M SM 514260B/BSL is OKI's CMOS silicon gate process

PDCR 900

Abstract: pdcr 900 druck sensor druck pdcr 250 druck pdcr 900 pdcr 900 pressure transducer MS33656-4 PDCR 1000 pdcr pressure transducer PDCR 900 pressure PDCR 900 series
Contextual Info: cd PDCR 2100 SERIES Wet/Wet Differential Pressure Transducers Ÿ High accuracy ±0.1% BSL for ranges to 900 psid Ÿ Excellent stability ±0.1% FS per 12 months Ÿ Compatible with corrosive fluids Stainless steel and Hastelloy wetted parts Ÿ All welded construction

Contextual Info: International k Rectifier HEXFET® Power MOSFET • • • • • • Il U6SS4S2 0014b3£ bSl IINR PD-9.325Q IRF510 INTERNATIONAL b5E D rectifier Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling

AT-108

Abstract: AT-108TR M513 AT108
Contextual Info: Voltage Variable Absorptive Attenuator 40 dB, 0.5-3.0 GHz Functional Schematic 1,2,3,4 Features • • • • • • AT-108 V6 Single Positive Voltage Control: 0 to +5 Volts 40 dB Attenuation Range at 900 MHz ± 2 dB Linearity from BSL Low DC Power Consumption

Contextual Info: AT-108 Voltage Variable Absorptive Attenuator 40 dB, 0.5 - 3.0 GHz Rev. V7 Functional Schematic 3,4,5,6 Features • • • • • • M/A-COM Products Single Positive Voltage Control: 0 to +5 Volts 40 dB Attenuation Range at 900 MHz ± 2 dB Linearity from BSL

MAAVSS0007

Abstract: MAAVSS0007TR AT-108 M513
Contextual Info: RoHS Compliant Voltage Variable Absorptive Attenuator 40 dB, 0.5-3.0 GHz Functional Schematic 1,2,3,4 Features • • • • • • • • • • MAAVSS0007 V1 Single Positive Voltage Control: 0 to +5 Volts 40 dB Attenuation Range at 900 MHz ± 2 dB Linearity from BSL

2232 R 012 S

Abstract: hallsensor 2232U BLD 4803 SL2p 4803 Faulhaber 2232 K 2232 4803-SH4P 2232 Faulhaber NE- C 912
Contextual Info: Bürstenlose DC-Servomotoren 6,5 mNm sensorlos, optional mit Hall Sensoren SMARTSHELL Technologie Kombinierbar mit Getriebe: 20/1, 22/2, 22/5, 22/6, 22/7, 23/1, 26/1, 30/1, 38/3 Steuerungen: BLD 4803-SL2P, SC 2804 Serie 2232 . BSL 1 2 3 4 Nennspannung

faulhaber BLD 5604

Abstract: 4803-SH4P 4803 BLD 4803 SL2p
Contextual Info: Brushless DC-Servomotors 5,7 mNm sensorless, with optional Hall Sensors SMARTSHELL Technology For combination with Gearheads: 15/3, 15/4, 15/5, 15/8, 16/7 Drive Electronics: BLD 4803-SL2P, SC 1801 Series 1536 . BSL 1 2 3 4 Nominal voltage Terminal resistance, phase-phase

AT-110-2

Abstract: M513 MAAVSS0008 MAAVSS0008TR
Contextual Info: RoHS Compliant Voltage Variable Absorptive Attenuator 30 dB, 0.5-2.0 GHz Functional Schematic 1,2,3 Features • • • • • • • • • • • MAAVSS0008 V2 Single Positive Voltage Control: 0 to +5 Volts 30 dB Voltage Variable Attenuation ± 2 dB Linearity from BSL

AT-113

Abstract: M513 MAAV-008022 MAAV-008022-000000 MAAV-008022-TR3000 at1138
Contextual Info: RoHS Compliant 3 Volt Voltage Variable Absorptive Attenuator 40 dB, 0.5-2.0 GHz Features • • • • • • • • • MAAV-008022 V1 Functional Schematic 2,3,4,5 Single Positive Voltage Control: 0 to +3 Volts 40 dB Attenuation Range at 0.9 GHz ± 2 dB Linearity from BSL

Contextual Info: TMBaTST G0G2M2M bSl AND Ultra Bright LED Lamps: Type 1 Weight: 0.67 g Unit: mm AND188RAG Dual Color High Brightness LED T-2 1/4 Package (7.5 mm) Features • 7.5 mm diameter package • Bright dual color: Red (GaAIAs), Green (GaP) • Common anode • All plastic mold type, clear colorless lens