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    BSC600N25NS3 G Search Results

    BSC600N25NS3 G Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BSC600N25NS3 G
    		Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 250.0 V; RDS (on) (max) (@10V): 60.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 25.0 A; Original PDF 308.39KB 9
    BSC600N25NS3GATMA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 250V 25A TDSON-8 Original PDF 434.31KB
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    BSC600N25NS3 G Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC600N25NS3GATMA1

    MOSFET N-CH 250V 25A TDSON-8-1
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    Infineon Technologies AG BSC600N25NS3 G

    MOSFETs N-Ch 250V 25A TDSON-8 OptiMOS 3
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    Mouser Electronics BSC600N25NS3 G 4,367
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    Infineon Technologies AG BSC600N25NS3G

    Trans MOSFET N-CH 250V 25A 8-Pin TDSON EP T/R
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    BSC600N25NS3 G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    600N25NS

    Contextual Info: BSC600N25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant


    Original     		BSC600N25NS3 IEC61249-2-21 600N25NS 600N25NS PDF

    Contextual Info: BSC600N25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • Pb-free lead plating; RoHS compliant


    Original     		BSC600N25NS3 IEC61249-2-21 600N25NS PDF