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    BSC600N25NS3 Search Results

    BSC600N25NS3 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BSC600N25NS3 G
    		Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 250.0 V; RDS (on) (max) (@10V): 60.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 25.0 A; Original PDF 308.39KB 9
    BSC600N25NS3GATMA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 250V 25A TDSON-8 Original PDF 434.31KB
    SF Impression Pixel

    BSC600N25NS3 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC600N25NS3GATMA1

    MOSFET N-CH 250V 25A TDSON-8-1
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    BSC600N25NS3GATMA1 Cut Tape 5
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    Infineon Technologies AG BSC600N25NS3 G

    MOSFETs N-Ch 250V 25A TDSON-8 OptiMOS 3
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    Mouser Electronics BSC600N25NS3 G
    • 1 $4.40
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    Chip 1 Exchange BSC600N25NS3 G 90
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    Win Source Electronics BSC600N25NS3 G 20,000
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    Infineon Technologies AG BSC600N25NS3G

    Trans MOSFET N-CH 250V 25A 8-Pin TDSON EP T/R
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    Verical BSC600N25NS3G 4,990 21
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    BSC600N25NS3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BSC600N25NS3 G

    Abstract: 600N25NS IEC61249-2-21 JESD22 FS25
    Contextual Info: BSC600N25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 60 mΩ ID 25 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant


    Original     		BSC600N25NS3 IEC61249-2-21 600N25NS BSC600N25NS3 G 600N25NS IEC61249-2-21 JESD22 FS25 PDF

    600N25NS

    Contextual Info: BSC600N25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant


    Original     		BSC600N25NS3 IEC61249-2-21 600N25NS 600N25NS PDF

    Contextual Info: BSC600N25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • Pb-free lead plating; RoHS compliant


    Original     		BSC600N25NS3 IEC61249-2-21 600N25NS PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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    Original     		PDF