BSB014N04LX3 G Search Results
BSB014N04LX3 G Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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BSB014N04LX3G |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 180A 2WDSON | Original | 13 | |||
BSB014N04LX3 G |
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N-Channel MOSFETs (20V - 250V); Package: MG-WDSON-2; Package: CanPAK; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V): 2.0 mOhm; ID (max): 180.0 A; | Original | 288.12KB | 11 | ||
BSB014N04LX3GXUMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 180A 2WDSON | Original | 1.49MB |
BSB014N04LX3 G Price and Stock
Infineon Technologies AG BSB014N04LX3GXUMA1MOSFET N-CH 40V 36A/180A 2WDSON |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSB014N04LX3GXUMA1 | Digi-Reel | 1 |
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BSB014N04LX3GXUMA1 | 40 |
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Infineon Technologies AG BSB014N04LX3GXUMA1 (OPTIMOS)Mosfet, N-Ch, 40V, 180A, Mg-Wdson-2-2; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSB014N04LX3GXUMA1 |
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BSB014N04LX3GXUMA1 (OPTIMOS) | Cut Tape | 1 |
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Infineon Technologies AG BSB014N04LX3GXTTransistors |
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BSB014N04LX3GXT | 619 |
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BSB014N04LX3 G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: n-Channel Power MOSFET OptiMOS BSB014N04LX3 G Data Sheet 2.2, 2011-05-24 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB014N04LX3 G 1 Description OptiMOS™40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together |
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BSB014N04LX3 OptiMOSTM40V | |
Contextual Info: n-Channel Power MOSFET OptiMOS BSB014N04LX3 G Data Sheet 2.3, 2011-05-24 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB014N04LX3 G 1 Description OptiMOS™40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together |
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BSB014N04LX3 | |
Contextual Info: n-Channel Power MOSFET OptiMOS BSB014N04LX3 G Data Sheet 2.3, 2011-05-24 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB014N04LX3 G 1 Description OptiMOS™40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together |
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BSB014N04LX3 OptiMOSTM40V | |
BSB014N04LX3 G
Abstract: JESD22
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BSB014N04LX3 BSB014N04LX3 G JESD22 | |
PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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