BS7 MARKING Search Results

Contextual Info: MICRON S E M I C O N D U C T O R INC i h3E D • blllSMT G G Q ñ 2 n BS7 H M R N MT16D88C51232 512K x 32,1 MEG x 16 IC DRAM CARD I 2 MEGABYTES IC DRAM CARD 512K x 32, 1 MEG x 16 FEATURES PIN ASSIGNMENT End View 88-Pin Card (DF-1) OPTIONS MARKING • Timing

Contextual Info: • fi cl 3 5 1.OS GlG3mO bS7 SIEM ENS TrilithIC BTS 775 P relim in ary Data Overview Features • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low R ds on @ 25 °C: High-side switch: typ.85 m il,

smd code book 13t

Abstract: transistor SMD 13t 13t smd transistor SIPMOS application note SMD marking DHS 2128x
Contextual Info: • fl El 3 5 1. GS G 1 0 3 4 1 0 bS7 . SIE M E N S T rilith lC BTS 775 P re lim in a ry D ata Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications

Contextual Info: SIEM EN S BAR 65-07 Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-Diode • Band switch for TV-tuners • Series diode for mobile communications transmit-receive switch • Unconnected pair Type Marking Ordering Code BAR 65-07

Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTORS P-KJ-P transistors Marking BCW89 = H3 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm O .U Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)

BCW89

Abstract: BS7 marking
Contextual Info: L BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 0.60 0.40 _t.02_ 0.89 2.00 1.80 ABSOLUTE MAXIMUM RATINGS

Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors BFN 24 BFN 26 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 25, BFN 27 PNP Type

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02LT1 Motorola Preferred Device Low rDS on Sm all-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Part of the GreenLine Portfolio of devices with energyconserving traits.

d2 SMD TRANSISTORs pnp npn

Abstract: BCW600 2n2222a smd smd transistors B5R17 hS7 marking darlington bc smd smd marking BJ
Contextual Info: SMD Transistors SOT-23 Case 350mW Proelectron Series— Confd Q <' H MARKING CODE SIMILAR LEADED DEVICE — 3K BC5586 — 3L Cofc PF MAX (MHz) TYP NF (dB) MAX tofF (mA) 0.65 100 4.5 150 10 0.65 100 4.5 150 10 2.0 0.65 100 4.5 150 4.0 — 50 2.0 0.65 100

Contextual Info: SONY CXP82200 CMOS 8-bit Single Chip Microcomputer EPROM equipped Description The CXP82200 is a C M O S 8-bit single chip microcomputer of piggyback/evaluator combined type, which is developed for evaluating the function of the CXP82220/82224. Features • Wide-range instruction system 213 instructions to

ICOTRON

Contextual Info: Metallized Polyester Film Capacitors MKT Axial Leads B 32 237 High-voltage capacitors Cylindrical winding Construction • Dielectric: polyethylene terephthalate (polyester) • Cylindrical winding • In tubular plastic case • Face ends sealed with epoxy resin

rde 090

Abstract: BFJ309LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifier Transistor N-Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE GATE 1 DR AIN MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc ta 10 mAdc Symbol Max Unit

smd 42t

Contextual Info: PD-9.1003 International k R ectifier IRF614S HEXFET® Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 250V

Contextual Info: PD - 9.543C International I R Rectifier IRFPG50 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1000V ^DS on “ 2 -0 ^ lD = 6.1 A Description

BCB60

Abstract: transistor smd npn ag smd npn darlington "low noise" npn bcf70 d2 SMD TRANSISTORs pnp npn darlington bc smd H7 marking code smd marking code transistors BSV52 SMD MARKING CODE vk
Contextual Info: SMDTransistors SOT-23 Case 350mW Proelectron Series—Confd « TYPE NO. DESCRIPTION BC858B BC858C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE

KAF-10500

Abstract: PS-0982
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0962 December 1, 2006 KODAK KAF-10500 IMAGE SENSOR 3970 H X 2646 (V) FULL-FRAME CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

BLF177

Abstract: philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244
Contextual Info: bbS3^31 GOSTfi?1! Philips Semiconductors H3B [A P X Product specification BLF177 HF/VHF power MOS transistor N AMER P H I L I P S / D I S C R E T E b'iE D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control

KAF-10500

Abstract: KE-25 1000X kodak kaf 10500 KEK-4H0846-KAF-10500-12-24
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 5.0 MTD/PS-0962 July 26, 2007 KODAK KAF-10500 IMAGE SENSOR 3970 H X 2646 (V) FULL-FRAME CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

Contextual Info: LTC1481 / T L i nTECHNOLOGY Ç A B Ultra-Low Power RS485 Transceiver with Shutdown F€RTURCS DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ The LTC1481 is an ultra-low power differential line trans­ ceiver designed for data transmission standard RS485 applications. It will also meet the requirements of RS422.

S2919AIF10

Abstract: S-2919aif10 seiko 64 s chip
Contextual Info: S-2919AR/I C M O S 1 K -b it s e r ia l E P R O M E a s y in terfa ce with se ria l port T h e S -2919A R /I is a high sp e e d , low pow er 1 K-bit E2 P R O M that u s e s the C M O S floating-gate p ro c e s s. T h e organization is 64-word x 16-bit, and it is read or

Contextual Info: r r u v m TECHNOLOGY Dual/Quad Micropower, 260jiW C-Load Picoampere Bias Current JFET Input Op Amps FCRTURCS D C S C R IP T IO H • Input Bias Current: 2pA M ax LT146 2A 20pA M a x (L T 1 4 6 2 , LT146 3 ) ■ Supply Current per Am plifier: 45|j A M ax

SIEMENS WF 470

Contextual Info: SIEMENS Single Wire CAN-Transceiver TLE 6255 G Target Data Sheet Features • • • • • • • • • • • • • Single wire Transceiver Ambient operation range - 40 °C to 125 °C Supply voltage operation range 5.5 V to 28 V Very low current consumption in sleep mode

Transistor TT 2246

Contextual Info: W hp% m LUM H E W L E TT PA CKA RD 1 .5 -1 8 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low M inim um N oise Figure: I dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • A sso ciated Gain: 9.4 dB Typical at 12 GHz

1N5415

Abstract: 1N5415US 1N5416US 1N5417US 1N5420 1N5420US
Contextual Info: MME D MIL SPECS MILS □□□□IBS 0Q3MSbS 2TT i- 1 I INCH-POUND | I_ l | The documentation and process conversion | j measures necessary to comply with this | | revision shall be completed by 1 August 19941