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    BS107 APPLICATION Search Results

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    BS107 APPLICATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    OMAP5910JGVL2
    Texas Instruments Applications processor Visit Texas Instruments Buy
    OMAP5910JZVL2
    Texas Instruments Applications processor Visit Texas Instruments Buy
    143-4142-11H
    Amphenol Communications Solutions Paladin RPO, DC, 4-Pair, 4 Column, APP PDF
    143-6262-11H
    Amphenol Communications Solutions Paladin RPO, DC, 6-Pair, 6 Column, APP PDF
    144-411D-11H
    Amphenol Communications Solutions Paladin RPO, DO, 4-Pair, 10 Column, 1.5mm Wipe, APP PDF

    BS107 APPLICATION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BS107A

    Abstract: BS107 MOTOROLA
    Contextual Info: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TM OS Switching N-Channel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 us Symbol


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    BS107/D BS107 BS107A BS107A BS107 MOTOROLA PDF

    TO-92-18RM

    Abstract: BS107 VN2010L TO-92-18R
    Contextual Info: VN2010L/BS107 Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications


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    VN2010L/BS107 VN2010L BS107 O226AA) P-38283--Rev. TO-92-18RM BS107 VN2010L TO-92-18R PDF

    BS107

    Abstract: VN2010L
    Contextual Info: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D


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    VN2010L/BS107 BS107 VN2010L O-226AA) P-38283--Rev. 15-Aug-94 BS107 VN2010L PDF

    equivalent of BS107

    Abstract: BS107 application BS107 vn2010l
    Contextual Info: VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D D


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    VN2010L/BS107 BS107 VN2010L O-226AA) P-38283--Rev. 15-Aug-94 equivalent of BS107 BS107 application BS107 vn2010l PDF

    BS107

    Abstract: BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA
    Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage


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    BS107, BS107A BS107) BS107A) BS107/D BS107 BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA PDF

    BC107 characteristic

    Abstract: BC107 to92 BS107 BC107 to-92
    Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage


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    BS107, BS107A BS107) BS107A) BS107/D BC107 characteristic BC107 to92 BS107 BC107 to-92 PDF

    VN2010L

    Abstract: BS107
    Contextual Info: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D


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    VN2010L/BS107 BS107 VN2010L O-226AA) P-38283--Rev. 15-Aug-94 VN2010L BS107 PDF

    BS-107C

    Contextual Info: Tem ic VN2010L/BS107 Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Ö) V(BR,)DSS Min (V) VN2010L BS107 200 Features v G S (th ) I d (A) (V) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ V GS = 2.8 V 0.8 to 3 0.12 Benefits


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    VN2010L/BS107 VN2010L BS107 P-38283--Rev. O-226AA) BS-107C PDF

    equivalent of BS107

    Abstract: BS107 VN2010L BS107 application
    Contextual Info: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W


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    VN2010L/BS107 VN2010L BS107 O-226AA O-92-18RM 18-Jul-08 equivalent of BS107 BS107 VN2010L BS107 application PDF

    BS107 MOTOROLA

    Abstract: BS107A BS107
    Contextual Info: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs


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    BS107/D BS107 BS107A 226AA) BS107 MOTOROLA BS107A BS107 PDF

    BS107

    Abstract: PPAP MANUAL BS107AG BS107A BS107ARL1 BS107ARL1G BS107G
    Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 http://onsemi.com Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Package is Available* 250 mAMPS, 200 VOLTS RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A)


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    BS107, BS107A BS107) BS107A) BS107/D BS107 PPAP MANUAL BS107AG BS107A BS107ARL1 BS107ARL1G BS107G PDF

    Contextual Info: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W


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    VN2010L/BS107 VN2010L BS107 O-226AA 08-Apr-05 PDF

    Contextual Info: Temic siiiconix_VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS VN2010L Mín (V) r DS(on) 200 BS107 Max (Q) Id (A) (V) VGS(th) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12


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    VN2010L/BS107 VN2010L BS107 Su5/94) O-226AA) P-38283-- PDF

    ha1100

    Abstract: UG-94 bs107
    Contextual Info: Temic VN2010L/BS107 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max <Q) VGS(th)(V) Id (A) 10 @ V o s = 4.5 V 0.8 to 1.8 0.19 28 @ V o s = 2.8 V 0.8 to 3 0.12 V N2010L 200 BS107


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    VN2010L/BS107 N2010L BS107 O-226AA) ug-94 ha1100 UG-94 PDF

    Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc • High-speed switching • No secondary breakdown. DESCRIPTION SYMBOL PARAMETER


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    BS107 CB700 PDF

    Contextual Info: Philips Semiconductors BS107 Data sheet status Prelim inary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PIN CONFIGURATION FEATURES


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    BS107 -TO-92 MBB073 PDF

    MAM146

    Abstract: BP317 BS107 bs107 philips
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    BS107 SC13b SCA54 137107/00/01/pp12 MAM146 BP317 BS107 bs107 philips PDF

    BS107

    Abstract: BS107 application BS107A BS107ARL1 BS107ARLRM BS107ARLRP BS107RL1 BS107RLRA
    Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N–Channel TO–92 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs Drain Current Continuous (Note 1.) Pulsed (Note 2.)


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    BS107, BS107A BS107) BS107A) r14525 BS107/D BS107 BS107 application BS107A BS107ARL1 BS107ARLRM BS107ARLRP BS107RL1 BS107RLRA PDF

    Philips DATA Handbook sc07

    Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc • High-speed switching • No secondary breakdown. DESCRIPTION SYMBOL PARAMETER


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    BS107 Philips DATA Handbook sc07 PDF

    bs107 transistor

    Abstract: cr 406 transistor BS107 UCB700 transistor 406 specification
    Contextual Info: Philips Com ponents BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATU RES • Direct interface to C-M OS, T T L , etc. • High speed switching


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    BS107 MBB073 UCB700 bs107 transistor cr 406 transistor BS107 UCB700 transistor 406 specification PDF

    motorola l6 lcd

    Abstract: BS107 MOTOROLA AY0438 AY0438/P001
    Contextual Info: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N-Channel — Enhancement 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Vd S 200 Vdc vgs ±20 +30 Vdc Vpk Gate-Source Voltage — Continuous


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    BS107/D 100jiA DS700101-page A0cn0NH03± motorola l6 lcd BS107 MOTOROLA AY0438 AY0438/P001 PDF

    TRANSISTOR D 471

    Abstract: interruptor bs107 TO92
    Contextual Info: Philips • Semiconductors bbS3^4 0070013 471 ■ S I C3 BS107 Data sheet status Preliminary specification date of Issue February 19^.1 N-channel enhancement mode vertical D-MOSthansistor FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET


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    BS107 MBB073 TRANSISTOR D 471 interruptor bs107 TO92 PDF

    Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PINNING - TO -92 variant PIN CONFIGURATIO N FEATURES PIN • Direct interface to C-M O S, TTL,


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    BS107 MBB073 PDF

    s3331

    Contextual Info: Philips Components BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATURES PIN • Direct interface to C-M O S, TTL, etc. • High speed switching


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    BS107 yP1031 s3331 PDF