BS107 APPLICATION Search Results

BS107A

Abstract: BS107 MOTOROLA
Contextual Info: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TM OS Switching N-Channel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 us Symbol

TO-92-18RM

Abstract: BS107 VN2010L TO-92-18R
Contextual Info: VN2010L/BS107 Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications

BS107

Abstract: VN2010L
Contextual Info: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D

equivalent of BS107

Abstract: BS107 application BS107 vn2010l
Contextual Info: VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D D

BS107

Abstract: BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA
Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage

BC107 characteristic

Abstract: BC107 to92 BS107 BC107 to-92
Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage

VN2010L

Abstract: BS107
Contextual Info: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D

BS-107C

Contextual Info: Tem ic VN2010L/BS107 Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Ö) V(BR,)DSS Min (V) VN2010L BS107 200 Features v G S (th ) I d (A) (V) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ V GS = 2.8 V 0.8 to 3 0.12 Benefits

equivalent of BS107

Abstract: BS107 VN2010L BS107 application
Contextual Info: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W

BS107 MOTOROLA

Abstract: BS107A BS107
Contextual Info: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs

BS107

Abstract: PPAP MANUAL BS107AG BS107A BS107ARL1 BS107ARL1G BS107G
Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 http://onsemi.com Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Package is Available* 250 mAMPS, 200 VOLTS RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A)

Contextual Info: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W

Contextual Info: Temic siiiconix_VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS VN2010L Mín (V) r DS(on) 200 BS107 Max (Q) Id (A) (V) VGS(th) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12

ha1100

Abstract: UG-94 bs107
Contextual Info: Temic VN2010L/BS107 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max <Q) VGS(th)(V) Id (A) 10 @ V o s = 4.5 V 0.8 to 1.8 0.19 28 @ V o s = 2.8 V 0.8 to 3 0.12 V N2010L 200 BS107

Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc • High-speed switching • No secondary breakdown. DESCRIPTION SYMBOL PARAMETER

Contextual Info: Philips Semiconductors BS107 Data sheet status Prelim inary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PIN CONFIGURATION FEATURES

MAM146

Abstract: BP317 BS107 bs107 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

BS107

Abstract: BS107 application BS107A BS107ARL1 BS107ARLRM BS107ARLRP BS107RL1 BS107RLRA
Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N–Channel TO–92 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs Drain Current Continuous (Note 1.) Pulsed (Note 2.)

Philips DATA Handbook sc07

Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc • High-speed switching • No secondary breakdown. DESCRIPTION SYMBOL PARAMETER

bs107 transistor

Abstract: cr 406 transistor BS107 UCB700 transistor 406 specification
Contextual Info: Philips Com ponents BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATU RES • Direct interface to C-M OS, T T L , etc. • High speed switching

motorola l6 lcd

Abstract: BS107 MOTOROLA AY0438 AY0438/P001
Contextual Info: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N-Channel — Enhancement 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Vd S 200 Vdc vgs ±20 +30 Vdc Vpk Gate-Source Voltage — Continuous

TRANSISTOR D 471

Abstract: interruptor bs107 TO92
Contextual Info: Philips • Semiconductors bbS3^4 0070013 471 ■ S I C3 BS107 Data sheet status Preliminary specification date of Issue February 19^.1 N-channel enhancement mode vertical D-MOSthansistor FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET

Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PINNING - TO -92 variant PIN CONFIGURATIO N FEATURES PIN • Direct interface to C-M O S, TTL,

s3331

Contextual Info: Philips Components BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATURES PIN • Direct interface to C-M O S, TTL, etc. • High speed switching