BS10 Search Results

Contextual Info: MOTOROLA Order this document by BS108/D SEMICONDUCTOR TECHNICAL DATA Logic Level TMOS N-Channel Enhancement Mode T his T M O S FET is d e s ig n e d fo r high v o lta g e , high sp e e d switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high

Contextual Info: My-Com precision switches MY-COM BS100 My-Com precision switches dimension drawing M8 x 0,5 1,5 ø 1 ø 7,4 2 30 18 SW 10 ø 8 general data photo repeatability < 0,001 mm activating force 100 cN mech. pre-run / overrun - / 1,5 mm approx. electrical data

BS107

Abstract: BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA
Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage

vishay siliconix code marking

Abstract: TN2404KL-TR1-E3 TO-92-18RM BS107KL TN2404K BS107KL-TR1 TN2404KL TN2404KL-TR1 TN2404K-T1 TN2404K-T1-E3
Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V D-S MOSFET PRODUCT SUMMARY Part Number VDS Min (V) TN2404K 240 TN2404KL/BS107KL FEATURES D D D D D rDS(on) (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2.0 0.2 4 @ VGS = 10 V 0.8 to 2.0 0.3 BENEFITS

Contextual Info: My-Com precision switches MY-COM BS100 My-Com precision switches dimension drawing M8 x 0,5 1,5 ø 1 ø 7,4 2 30 18 SW 10 ø 8 general data photo repeat accuracy < 0,001 mm activating force 100 cN mech. pre-run / overrun - / 1,5 mm approx. electrical data

Contextual Info: My-Com precision switches MY-COM BS100 My-Com precision switches dimension drawing M8 x 0,5 1,5 ø 1 ø 7,4 2 30 18 SW 10 ø 8 general data photo repeat accuracy < 0,001 mm activating force 100 cN mech. pre-run / overrun - / 1,5 mm approx. electrical data

bs100

Contextual Info: My-Com precision switches MY-COM BS100 My-Com precision switches dimension drawing M8 x 0,5 1,5 ø 1 ø 7,4 2 30 18 SW 10 ø 8 general data photo repeat accuracy < 0,001 mm activating force 100 cN mech. pre-run / overrun - / 1,5 mm approx. electrical data

BS108 relay driver

Abstract: BS108ZL1G BS108 BS108G BS108ZL1 2ID-250 BS108D
Contextual Info: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage

equivalent of BS107

Abstract: BS107 VN2010L BS107 application
Contextual Info: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W

bs107 transistor

Abstract: cr 406 transistor BS107 UCB700 transistor 406 specification
Contextual Info: Philips Com ponents BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATU RES • Direct interface to C-M OS, T T L , etc. • High speed switching

MBB691

Abstract: BS108 UBB073
Contextual Info: • PhilipsSemiconductor« ^ hb53=l31 0DS3?at 27t m APX PHILIPS/DISCRETE b ? E D P " *» "* .p ~ m c Mlon N-channel enhancement mode vertical D-MOS transistor FEATURES c BS108 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching

BS100D

Abstract: bs100
Contextual Info: SHARP E L E K / MELEC DIV 1SE D I Blue Sensitive Photodiode BS100D • 01 0 07 ^ 0 E I • ■ B S 100D Wide Wavelength Band Type Photodloîe^ Featu res Outline Dim ensions Unit : mm 1. Wide dynamic range (Capable of Ev = 10-3 ~ 104#x range measurament)

pc123y22

Abstract: gp2d04 GP2D021 GP1A040R GP2D12 IS471FsE GP2Y0A02YK S2S4A00F GP2S24BC GP2Y0A21YK
Contextual Info: ES: Eric Sunderhaus, JD: Jeremy Dietz, RS: Robert Stuart PART NUMBER BS100C BS500B BS520 MKT INT JD JD JD PART DESCRIPTION / REPLACEMENT Blue Sens. PD Blue Sens. PD Blue Sens. PD Lead Free Part Number Lead Free Version of Replacement BS100C0F BS500B0F

BS107

Contextual Info: BS107 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR /Li T E M I ri I POWER SEMICONDUCTOR / Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets TO-92 Mechanical Data_ • • • • Case: TO-92 Plastic

Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS (V) RDS(on) () VGS(th) (A) 240 4 at VGS = 10 V 0.8 to 2 ID (A) 0.2 TN2404K TN2404K, BS107KL • • • • • Qg (Typ.) 0.3 4.87 nC Low On-Resistance: 4 

BS107A equivalent

Abstract: BS107 "direct replacement" BC237 BS107 BC108 characteristic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit VDS 200 Vdc VGS VGSM ± 20 ± 30 ID IDM 250 500 PD 350 mW TJ, Tstg – 55 to 150 °C Drain – Source Voltage

Contextual Info: BS109 N-Channel Enhancement Mode DMOS Transistor <-6 . 3.6 I- ' I ; Ì Features - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway

ITT DIODE 129

Abstract: diode ITT 129 bs108 ITT DIODE ITT Intermetall bs108 transistor ITT
Contextual Info: BS108 N-Channel Enhancement Mode DMOS Transistor Features - high breakdown voltage - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input

Contextual Info: My-Com precision switches MY-COM BS100 My-Com precision switches dimension drawing M8 x 0,5 1,5 ø 1 ø 7,4 2 30 18 SW 10 ø 8 general data photo repeat accuracy < 0,001 mm activating force 100 cN mech. pre-run / overrun - / 1,5 mm approx. electrical data

Contextual Info: BS107 VISHAY N -C H A N N E L E N H A N C E M E N T M O D E T R A N S IS T O R F e a t u r e s _ • • • • High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets

Contextual Info: BS108 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A TO-92 B Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7

Contextual Info: Philips Semiconductors BS107 Data sheet status Prelim inary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PIN CONFIGURATION FEATURES

TRANSISTOR SL 100

Abstract: bs107a
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BS107A QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. Gate-source voltage open drain • High-speed switching Drain current (DC) • No second breakdown

Contextual Info: My-Com precision switches MY-COM BS100 My-Com precision switches dimension drawing M8 x 0,5 1,5 ø 1 ø 7,4 2 30 18 SW 10 ø 8 general data photo repeat accuracy < 0,001 mm activating force 100 cN mech. pre-run / overrun - / 1,5 mm approx. measurement type