BS 88.4 Search Results

mt 1389 de

Abstract: samwha ferrite EE-4242 EER3530 EER2834 PQ3225 samwha ferrite tile samwha .FERRITE TILE eer3435 str 52100
Contextual Info: www.samwha.com/electronics SAMWHA ELECTRONICS SEOUL HQ SAMWHA USA Inc. SAN DIEGO HQ SAMWHA HUNGARY KFT. HUNGARY Samyoung Bldg 587-8, Sinsa-Dong, Gangnam-Gu, Seoul, 135-892, Korea Tel. +82-2-546-0999 Fax. +82-2-546-7354 2555 Melksee Street, San Diego, California, 92154, USA

br 8764

Abstract: 13-AMPLIFIER BF1210
Contextual Info: BF1210 Dual N-channel dual gate MOSFET Rev. 01 — 25 October 2006 Product data sheet 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable

C41SWS

Abstract: 41aewt C41ASW-RA
Contextual Info: Attenuation and Average Power Cable Ordering Information Description Type No. High Power, High Tem perature Cable HST1-50 1/4" Cable Characteristics Electrical Im pedance, ohms M aximum Frequency, GHz Velocity, percent Peak Power Rating, kW dc Resistance, ohm s/1000 ft 1000 m

BF1109

Abstract: BF1109R BF1109WR dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs

BF1109

Abstract: marking code NB BF1109R BF1109WR dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 1997 Dec 08 NXP Semiconductors Product specification BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs FEATURES

BF1109

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 1997 Dec 08 NXP Semiconductors Product specification BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs FEATURES PINNING

transistor smd code marking 404

Abstract: transistor smd code marking .404 transistor SMD MARKING CODE 882 transistor SMD MARKING CODE NB marking code NB TRANSISTOR SMD MARKING CODE BS t TRANSISTOR SMD MARKING CODE BS s NXP SOT143R MSL TRANSISTOR SMD MARKING CODE 1v marking code ff SMD Transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs

Sprecher Schuh LE 2-20

Abstract: Sprecher Schuh LE 2-12 Sprecher Schuh le2-12 LE2-20 Sprecher Schuh LE2-20 Sprecher Schuh LE2-16 Sprecher Schuh CT 3-23 LA2-G2853 T3168 Sprecher Schuh L2-16
Contextual Info: Rotary Cam Switches Series L2 Rotary Cam Switches Technical Information K2 K27 Series R-Line Rotary Cam Switches Technical Information K35 K44 Custom Switches K51 K Rotary Cam Switches K1 Series L2 Rotary Cam Switches Sprecher + Schuh’s comprehensive line

Sprecher Schuh LE 2-20

Abstract: Sprecher Schuh LE 2-12 Sprecher Schuh LE 2-25 sprecher schuh le2-16 cam switch Sprecher Schuh L2-16 Sprecher Schuh LE2-20 Sprecher Schuh LE2-16 LE2-20 Sprecher Schuh le2-12 Sprecher Schuh LE 2
Contextual Info: Series L2 Rotary Cam Switches Sprecher + Schuh’s comprehensive line of L2 rotary cam switches are available for all control and load applications up to 25 amps. The line is modular and has many convenience and safety features. A well thought out ordering

UHF Class-E Power Amplifier Based Upon Multi-harmonic Approximation

Abstract: single tuned amplifier theory
Contextual Info: UHF Class-E Power Amplifier Based Upon Multi-harmonic Approximation Ramon A. Beltran Skyworks Solutions Inc., 2427 W. Hillcrest Dr., Newbury Park, CA, 91320, USA. E-mail: ramon.beltran@skyworksinc.com Abstract— At high frequencies class-E power amplifiers

170M8554

Abstract: bussmann Fuse 450 amps 250 volts max zs FM09 PS Jet 20A 300v fuse
Contextual Info: Circuit Protection Products for the Electrical Industry New Products for All Markets For product data sheets, visit www.cooper.bussmann.com/products/datasheet.asp Circuit Protection Products for the Electrical Industry Table of Contents RED indicates NEW information

220v AC voltage stabilizer schematic diagram

Abstract: FUSE M2 250e 11kV breaker control circuit diagram bussmann Fuse 170L series bussmann semiconductor fuse catalogue arc welder schematic HRC fuse gg GEC relay applications for 6.6kV switchgear ups circuits 170E bussmann
Contextual Info: Circuit Protection Products for the Electrical Industry New Products for All Markets For product data sheets, visit www.cooper.bussmann.com/products/datasheet.asp Circuit Protection Products for the Electrical Industry Table of Contents RED indicates NEW information

Contextual Info: Connectors Section Contents Page Feed through blocks DS series . . . . . . . . . . . . . . . . . . 334 Feed through blocks (DP series) . . . . . . . . . . . . . . 335-336 Mini feed through blocks (DM series) . . . . . . . . . . . . . . 337 Double level blocks (DDP series). . . . . . . . . . . . . . . . . . 338

nbc 3101

Abstract: ha 1758 PACKAGE OUTLINE 83B bs 246 fet
Contextual Info: ULTRA LOW NOISE NE24283B PSEUDOMORPHIC HJ FET FEATURES_ NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz • HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz • GATE LENGTH: 0.25 Jim

7505C

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. 5 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. D C f i r If I f f 3.81 ± 0 . 0 5 [.1 5 0 + . 0 0 2 ] 0 1 .1 4 + 0 .0 2 TYP. 0.76 + 0.05 [.0 3 0 + .002] [.0 4 5 + .001] BEFORE PLATING

TRANSISTOR BD 137-10

Contextual Info: CFS0303-SB Advanced Product Information February 2004 V1.2 1 of 16 Features ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) ❏ High Dynamic Range ❏ Low Current and Voltage. ❏ Bias Point 3V and 60 mA ❏ 0.3 dB noise figure at 2 GHz

TRANSISTOR BD 137-10

Abstract: 2304 sot 353 celeritek V1.8K 9817
Contextual Info: CFS0303-SB PNQ@š•@QPNP@gh¡ l•ž@n•Œ ˆL@mˆ‡Œ›“@p•žˆ˜@–hemt Œ”@„@s›˜‰„†ˆ@m•›”š@p’„™šŒ†@p„†‘„Šˆ mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY

104 c1k capacitor

Abstract: 103 c1k capacitor UPC2712T marking code C1H mmic marking code C1G mmic uPC2749 equivalent 104 c1k marking code C1L UPC2713T transistor marking C2s
Contextual Info: Application Note USAGE AND APPLICATIONS OF 6-PIN MINI-MOLD, 6-PIN SUPER MINI-MOLD SILICON HIGH-FREQUENCY WIDEBAND AMPLIFIER MMIC µPC2711-15 µPC2745-49 µPC2791/92 µPC3210 Document No. P11976EJ2V0AN00 2nd edition Date Published May 1999 N CP(K) 1997

TRANSISTOR BD 137-10

Contextual Info: CFS0303-SB Advanced Product Information March 2004 V1.3 1 of 16 Features ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) ❏ High Dynamic Range ❏ Low Current and Voltage. ❏ Bias Point 3V and 60 mA ❏ 0.3 dB noise figure at 2 GHz

marking code C1G mmic

Abstract: 103 c1k marking code C1H mmic 104 c1k marking code C1L PC2711 UPC2712T UPC1688 POWER MINIMOLD marking code renesas
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

ic HS 2272

Abstract: tg 56700 SR 13009 transistor sr 13009 transistor d 13009 IC tt 3034 0732 8m80 D 13009 K gi 9405
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES . LOW VOLTAGE/LOW CURRENT OPERATION . HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ 18 SOT 343 STYLE

celeritek LNA

Abstract: CFS0303-SB-0G00 TRANSISTOR BD 137-10 PB-CFS0303-SB-00C0 CF003-03 CFS0303-SB CFS0303-SB-0G0T PB-CFS0303-SB-00A0 PB-CFS0303-SB-00B0 TRANSISTOR BD 168
Contextual Info: 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package May 2006 - Rev 23-May-06 CFS0303-SB Features AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA

CFS0303-SB-0G00

Abstract: celeritek LNA CFS0303-SB-0G0T 22 GA TIN COPPER WIRE CF003-03 CFS0303-SB PB-CFS0303-SB-00A0 PB-CFS0303-SB-00B0 PB-CFS0303-SB-00C0
Contextual Info: 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package May 2008 - Rev 02-May-08 CFS0303-SB Features AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA

CFS0303-SB-0G0T

Abstract: TRANSISTOR BD 137-10 PB-CFS0303-SB-00B0 transistor 2440 bd 9473
Contextual Info: 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package May 2006 - Rev 23-May-06 CFS0303-SB Features AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA