BROADBAND Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 7.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA TIM0910-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 6.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TL3M Device Triple Level 3 Mapper TXC-03453 TECHNICAL OVERVIEW SDH/SONET SIDE TELECOM BUS O-Bit Interfaces • Add/drop multiplexers • Digital cross connect systems • Broadband switching systems • Transmission equipment External Alarm Interfaces Drop Bus

Contextual Info: Sertopia Device UTOPIA Serializer TXC-05860 DATA SHEET PRODUCT PREVIEW The Sertopia™ TXC-05860 UTOPIA serializer is a single-chip solution for broadband communication systems. A pair of Sertopia devices interface two remote UTOPIA ports transparently across a serial link. The Sertopia emulates a

N4000-13

Abstract: Nelco 4000-13
Contextual Info: TQM8M9076 0.05-4 GHz Digital Variable Gain Amplifier Applications 32-pin 5x5mm leadless SMT package The TQM8M9076 integrates a high performance digital step attenuator followed by a high linearity, broadband gain block. The input and output of the individual stages are

MPS-082508-85

Abstract: 082508-85
Contextual Info: [MkzÏÏ MPS-082508-85/-86 800 to 2500 M H z High Linearity Amplifier F eature • +38 dBm Typical IP3 • +27 dBm Typical P1dB • 1 3 dB Typical Gain • 12 Volt Bias • Available in Surface M ount or Half Flange Package Description The MPS-082508-85 is broadband, self-biased GaAs FET amplifier. It is ideal for digital communications applica­

Motorola MRF183

Abstract: GS -L Capacitor
Contextual Info: MOTOROLA O rder this docum ent by M RF183/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF183 MRF183S, R1 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen­

SKY13415-485LF

Abstract: sky13415 SKY13416-485LF
Contextual Info: DATA SHEET SKY13415-485LF: 0.1-3.0 GHz SP5T Antenna Switch Applications • Any 2G/3G/4G antenna diversity or LTE TDD/FDD transmit/receive system for which GSM transmit is not required Features • Broadband frequency range: 0.1 to 3.0 GHz • Low insertion loss: 0.45 dB typical @ 2.7 GHz

GR-1221

Abstract: Water Meter ffc jdsu JDSU coupler
Contextual Info: COMMUNICATIONS COMPONENTS Fused Coupler, Two Window Key Features • Provides 1310 nm and 1550 nm wavelength coverage • Broadband operation ±40 nm • High power handling • Wide range of regular parts available "to go" • Proven reliability Applications

time-domain reflectometer

Abstract: optical circulator fiber optic circulator smf diode marking transistor marking code 1325 UPC 1008
Contextual Info: COMMUNICATIONS COMPONENTS Polarization-insensitive Circulator Key Features • Very low insertion loss • Broadband • Low wavelength dependent loss • Low temperature dependent loss • High-power handling capability and reliability • High isolation

Contextual Info: HE882/HEM882 BOWEI Broadband VCO BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Performance Frequency vs Tuning Voltage Frequency MHz 230 Features ●Low phase noise ●Perfect tuning linearity 2:1 ●Reliable thin film hybrid construction ●Custom frequency range 20～400MHz available

Contextual Info: HE365/HEM365/HES365 Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain dB 20 Features Frequency Range: 20～200MHz l 18dBm Typical 1dB Compression l Active Bias Design Supply Temperature Compensation

Contextual Info: RF2338 4 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description 4 Optimum Technology Matching Applied

Contextual Info: HE404B/HEM404B BOWEI Broadband VCO BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Performance Frequency vs Tuning Voltage Frequency MHz 2200 Features ●Low phase noise ●Hyperabrupt varactor 1980 1760 1540 1320 broad tuning bandwith ●Perfect tuning linearity

Contextual Info: HE395B/HEM395B Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain dB 14 Features 12 10 Frequency Range: 10～1500MHz l Active Bias Design Supply Temperature Compensation l Standard Hermetic Package

Contextual Info: NBB-302 4 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers

Rogers RO4350B microstrip

Contextual Info: GX03 Ultra Broadband Capacitor ADVANTAGES APPLICATIONS • Ultra Broadband performance • Ultra Low Insertion Loss • Semi Conductor Data Communications Customers • X7R Characteristics • Receiver Optical Sub-Assemblies • Excellent Return Loss • Transimpedance Amplifier

Contextual Info: HE385A/HEM385A/HES385A Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves Gain dB GAIN Features Frequency Range: 10～400MHz l Low Noise: 1.6dB(Typ) l 10dBm Typical 1dB Compression l Active Bias Design Supply Temperature Compensation l

Contextual Info: HE385C/HEM385C/HES385C Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves Gain dB GAIN Features Frequency Range: 20～250MHz l Low Noise: 1.8dB(Typical) l 23dBm Typical 1dB Compression l Active Bias Design Supply Temperature Compensation

Contextual Info: HE383B-3L/HEM383B-3L Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain dB 17 Features 15 13 Frequency Range: 20～600MHz l Low Noise: 1.0dB(Typ) l Active Bias Design Supply Temperature Compensation

IN6005

Contextual Info: HE381B/HEM381B/HES381B Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain dB 13 Features 12 Frequency Range: 20～500MHz l Active Bias Design Supply Temperature Compensation l Standard l Hermetic Package

Contextual Info: SBA-5089 Z SBA-5089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBA-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal