BRIDGE RECTIFIER, 50A, 600V Search Results

DBA500G

Abstract: diode 50A
Contextual Info: DBA500G Ordering number : ENA0699 SANYO Semiconductors DATA SHEET DBA500G Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Features • • • Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=50A. Specifications

DBA500G

Contextual Info: DBA500G Ordering number : ENA0699A SANYO Semiconductors DATA SHEET DBA500G Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Features • • • Plastic molded structure Peak reverse voltage : VRM=600V Average output current : IO=50A Specifications

Contextual Info: APTGT50H60RT3G Full bridge + rectifier bridge Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 50A @ Tc = 80°C Application • Solar converter Features  Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz

Contextual Info: APTGT50H60RT3G Full bridge + rectifier bridge Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 50A @ Tc = 80°C Application • Solar converter Features • Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz

APTGT50H60RT3G

Contextual Info: APTGT50H60RT3G Full bridge + rectifier bridge Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 50A @ Tc = 80°C Application • Solar converter Features • Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz

Contextual Info: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45m max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45m max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70m max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter

APTGT50X120BTP3

Abstract: APTGT50X120RTP3 dt99
Contextual Info: APTGT50X120RTP3 APTGT50X120BTP3 Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module VCES = 1200V IC = 50A @ Tc = 80°C Application • AC Motor control Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current

tyco igbt

Abstract: D8135 igbt tyco
Contextual Info: V23990-P185-A10 flow PIM 2, 600V, 50A Version 0601 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Input Rectifier Bridge Gleichrichterbrücke Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung

Contextual Info: APT50DL60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IF = 50A @ Tc = 80°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~        

Contextual Info: 10-FY06BIA050SG-M523E18 preliminary datasheet flowSOL 1 BI 600V/50A Features flow1 12mm housing ● Low inductive 12mm flow1 package ● Booster: ○ Dual boost topology ○ High-speed IGBT + ultrafast FWD ○ Bypass rectifier ● Inverter: ○ H-bridge topology

Contextual Info: APT50DL60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IF = 50A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • • +

igbt 500V 50A

Abstract: mosfet 500V 50A mosfet 600V 50A
Contextual Info: International ^Rectifier Provisional Data Sheet PD-9.1191 IRGTIN050K06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 50A V ce ON < 2.7V • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses •Short circuit rated

tyco igbt

Abstract: tyco igbt 1200V V23990-K249-A-PM miniskiip 2 miniskiip igbt tyco pim miniskiip 29 igbt tyco
Contextual Info: V23990-K249-A-PM preliminary datasheet V23990-K249-A-01-14 MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Symbol Values max. Unit

Contextual Info: International k*r]Rectifier Provisional Data Sheet PD-9.1155 IRGTIN050M06 Low conduction loss IGBT "HALF-BRIDGE" IGBT INT-A-PAK VŒ = 600V lc = 50A Vce ON < 2.0V .Rugged Design • Simple gate-drive .Switching-Loss Rating includes all "tail" losses • Short circuit rated

Contextual Info: APT50DL120HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 1200V IF = 50A @ Tc = 80°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~       

NTE53016

Abstract: NTE53020 bridge rectifier 50A NTE53018 RECTIFIER BRIDGE 25A 600V
Contextual Info: NTE53016 thru NTE53020 Silicon Bridge Rectifier, 50A Features: D Diffused Junction D Low Reverse Leakage Current D Low Power Loss, High Efficiency D Electrically Isolated, Low Profile Epoxy Case for Maximum Heat Dissipation D Mounting: Through Hole with #10 Screw