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    BR8045 Search Results

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    SMC Diode Solutions MBR8045WT

    Diode: Schottky rectifying; THT; 45V; 40Ax2; TO247AD; Ufmax: 0.6V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME MBR8045WT 1
    • 1 $4.44
    • 10 $3.48
    • 100 $2.01
    • 1000 $1.71
    • 10000 $1.71
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    Microchip Technology Inc SBR8045

    - Bulk (Alt: SBR8045)
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    Avnet Americas SBR8045 Bulk 40 Weeks 100
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    • 100 $116.83
    • 1000 $112.33
    • 10000 $109.53
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    Mouser Electronics SBR8045
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    • 100 $134.93
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    Newark SBR8045 Bulk 500
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    Master Electronics SBR8045
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    • 100 $112.20
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    Vyrian SBR8045 6,437
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    Navitas Semiconductor MBR8045

    - Bulk (Alt: MBR8045)
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    Avnet Americas MBR8045 Bulk 10 Weeks 100
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    • 100 $26.23
    • 1000 $23.67
    • 10000 $22.93
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    Mouser Electronics MBR8045
    • 1 $38.60
    • 10 $28.58
    • 100 $22.94
    • 1000 $22.94
    • 10000 $22.94
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    ITT Interconnect Solutions PLBR80450

    - Bulk (Alt: PLBR80450)
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    Avnet Americas PLBR80450 Bulk 6 Weeks 200
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    • 10000 $5.42
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    Mouser Electronics PLBR80450
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    Master Electronics PLBR80450
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    • 100 $6.66
    • 1000 $6.09
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    Navitas Semiconductor MBR8045R

    - Bulk (Alt: MBR8045R)
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    Avnet Americas MBR8045R Bulk 10 Weeks 100
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    • 100 $27.51
    • 1000 $24.82
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    Mouser Electronics MBR8045R
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    BR8045 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    B8035

    Abstract: mbr8035
    Contextual Info: MBR8035 BR8045 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MBRB045 is a Motorola Preferred Device Sw itch m o d e Pow er R ectifiers . . . using a platinum barrier metal in a large area metai-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.


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    mbr8035mbr8045mbrb045b8035 PDF

    IN1694

    Abstract: 1694 eo usd535 sd71 diode trw SD71 VAro 0249
    Contextual Info: MBR8035 BR8045 MOTOROLA SW ITCHM O DE POWER RECTIFIERS S C H O T T K Y R E C T IF IE R S . using a p la tin u m b arrie r m etal in a large area m e ta l-to -silico n pow er diode S ta te -o f-th e -a rt geom etry fea tu re s epitaxial construction w ith oxide passivation and m etal overlap contact. Ideally suited


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    mbr8035mbr8045br8035br8045+6in16941694 eousd535sd71 diodetrw sd71varo 0249 PDF