BR MARKING CODE Search Results

SMBJ20A

Abstract: SMBJ8.5 A 15 SMBJ15A SMBJ130A SMBJ170A SMBJ17A SMBJ58A SMBJ100A SMBJ64A SMBJ6.5A
Contextual Info: ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted Device Device Marking Code Breakdown Voltage V(BR) (Volts) at It Min. Test Current @lT(mA) Stand-Off Voltage VWM(Volts) Maximun Reverse Leakage at Vwm Id ( u A ) Max. SMBJ5.0 6.40 10 KD 7.30 KE SMBJ5.0A

250KL

Abstract: 40244 BS250KL TP0610KL TO-92-18RM S402 0610K
Contextual Info: TP0610KL/BS250KL Vishay Siliconix New Product P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) 6 @ VGS = −10 V −60 60 10 @ VGS = −4.5 V ID (A) 1 2 D 3 “S” TP 0610KL xxyy Device Marking Front View G 2

TVS SMA CM

Abstract: BM TVS TVS BM TVS AE SMA sd marking bh SMAJ10 SMAJ10A SMAJ11 SMAJ11A SMAJ12
Contextual Info: LESHAN RADIO COMPANY, LTD. SMA TVS Transient Voltage Suppressor TVS 400W SMAJ5.0-SMAJ170A TYPE Device Working Peak Reverse Marking Voltage Code Vwm Breakdown Voltage VBR (V) SMAJ5.0 SMAJ5.0A SMAJ6.0 SMAJ6.0A SMAJ6.5 SMAJ6.5A SMAJ7.0 SMAJ7.0A SMAJ7.5 SMAJ7.5A

2SA1179

Abstract: transistor marking 3k
Contextual Info: 2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High breakdown voltage A L 3 3 C B Top View 1 MARKING 1 K Product Marking Code

transistor marking 4D

Abstract: PNP 400V MMBTA44 MMBTA94
Contextual Info: MMBTA94 PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code

M8050

Abstract: m8050 NPN equivalent M8050 equivalent
Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 MARKING C B Top View 1 Product Marking Code M8050 Y11

M8050

Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 C B Top View MARKING 1 Product Marking Code M8050 Y11

npn transistor 0.1A 400V sot-23

Abstract: npn high voltage transistor 500v sot23 vbe 10v, vce 500v NPN Transistor top marking 3d npn NPN VCEO 500V sot23 MMBTA44 3D NPN 400V TRANSISTOR MARKING 3D sot-23 Marking 3D
Contextual Info: MMBTA44 NPN Silicon 500V, 0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code MMBTA44

MSD1328

Abstract: NPN low voltage marking br
Contextual Info: LESHAN RADIO COMPANY, LTD. NPN Low Voltage Output Amplifiers - Surface Mount MSD1328–RT1 MSD1328–ST1 COLLECTOR 3 MARKING DIAGRAM 3 1MX M 2 1 2 BASE x = R for RT1 S for ST1 M = Date Code SC–59 SUFFIX CASE 318D 1 EMITTER MAXIMUM RATINGS T A = 25 °C

Contextual Info: TWL6040 SWCS052A – AUGUST 2010 – REVISED DECEMBER 2011 www.ti.com 8-CHANNEL HIGH_QUALITY LOW-POWER AUDIO CODEC FOR PORTABLE APPLICATIONS FEATURES 1 • • 2 • • • • • • • • • • Four audio digital-to-analog DAC channels Stereo capless headphone drivers:

Contextual Info: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon * “G” Lead Pb -Free COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code (See 2 Table Below) 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating

BC857

Contextual Info: BC856A/B-BC857A/B BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code See 2 Table Below 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage

BC pnp 200mA

Abstract: BC856 BC856A BC857 BC857A BC858 BC858A BC859 PNP -50V -200mA sot23 transistor BC SERIES
Contextual Info: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code See 2 Table Below 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage

C8050

Contextual Info: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V COLLECTOR 3 3 MARKING DIAGRAM 3 XX = Device Code See Table Below 1 1 BASE 2

Contextual Info: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon COLLECTOR 3 * “G” Lead Pb -Free *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V 3 MARKING DIAGRAM 3 XX = Device Code (See

transistor BF 414

Abstract: 414 rf transistor 414 transistor K 414 transistor BF 414 BF414 BF transistor datasheet VCE0-30V marking 414
Contextual Info: BF 414 NPN Silicon RF Transistor ● BF 414 For low-noise, common base VHF and FM stages 2 3 1 Type Marking Ordering Code BF 414 – Q62702-F517 Pin Configuration 1 2 3 C B Package1 TO-92 E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage

BC10 npn transistor

Abstract: BC849C-2C BC850B/C C8050 transistor bc 556 BC847A BC848C BC850B BC848A bc848 NPN transistor
Contextual Info: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V COLLECTOR 3 3 MARKING DIAGRAM 3 XX = Device Code See Table Below 1 1 BASE 2

BF422

Abstract: BF 422 F495 bf420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531
Contextual Info: NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 421, BF 423 PNP ● 2 3 1 Type Marking Ordering Code BF 420 BF 422 – Q62702-F531

ic 421

Abstract: F496 BF421 BF423 Q62702-F496 Q62702-F532
Contextual Info: PNP Silicon Transistors With High Reverse Voltage BF 421 BF 423 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 420, BF 422 NPN ● 2 3 1 Type Marking Ordering Code BF 421 BF 423 – Q62702-F532

F495

Abstract: BF420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531 422 TO92 BF422
Contextual Info: NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 421, BF 423 PNP ● 2 3 1 Type Marking Ordering Code BF 420 BF 422 – Q62702-F531

transistor Bf 606

Abstract: BF606 BF606A transistor bf Q62702-F535 bf 239 BF 606 transistor 717 marking 606
Contextual Info: SIEMENS BF 606 A PNP Silicon RF Transistor • For VHF oscillator stages Type Marking Ordering Code BF 606 A - Q62702-F535 Pin Configuration 2 1 3 E C Package1 B TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 30 V Collector-base voltage

bf506

Contextual Info: SIEMENS PNP Silicon RF Transistor • BF 506 For VHF mixer and oscillator stages Type Marking Ordering Code BF 506 - Q62702-F534 Pin Co nfiguraltion 1 2 3 B C Package1 E TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-em itter voltage VCEO 35

BF transistor datasheet

Abstract: BF660
Contextual Info: PNP Silicon RF Transistor ● BF 660 For VHF oscillator applications Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 660 LEs Q62702-F982 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0

CD4511BE BCD to 7 SEGMENT DECODER

Abstract: code marking ti map CMOS BCD-to-7-Segment LED Latch Decoder Drivers cd4511b
Contextual Info: Data sheet acquired from Harris Semiconductor SCHS072B – Revised July 2003 Lamp Test LT , Blanking (BL), and Latch Enable or Strobe inputs are provided to test the display, shut off or intensity-modulate it, and store or strobe a BCD code, respectively.