BR BF422 Search Results

Contextual Info: BF422W Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC1861

Abstract: mpsa42q LOW-POWER SILICON NPN BF417 sm 6aa PE155A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 go. 95 PN3440 BFN22 BF622 BF422S PE422 S922TS BF822S S2057 2SC3333 2SC3334 Manufacturer V(BR)CEO hFE Ic Max (A) fT (Hz) PhilipsElec Siemens Akt See Index

Contextual Info: BF422P Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)100m Absolute Max. Power Diss. (W)900m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BF422L Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BF422A Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BF422S Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V) I(C) Max. (A)25m Absolute Max. Power Diss. (W)830m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: BF422 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)500m Absolute Max. Power Diss. (W)800m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)20m

2n6517 sot

Contextual Info: Bipolar Transistors High Voltage Transistors > 100 V NPN − MPSW42 − BF393 2N5551 − 2N6517 MPSA42 − BF422 2N5550 2N6515 MMBT6517LT1 − MMBTA42LT1 − MMBTA43LT1 MMBT5551LT1 − MMBT5550LT1 PZTA96ST1 BSP19AT1 PZTA42T1 − BF720T1 MSD42WT1 V(BR)CEO

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BF420 BF422 TRANSISTOR NPN TO-92 1. EMITTER FEATURES Power dissipation 0.83 W (Tamb=25℃) PCM: Collector current 0.1 A ICM: Collector-base voltage BF420 300 V V(BR)CBO:

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BF420 BF422 TRANSISTOR（NPN ） TO—92 1. EMITTER FEATURES Power dissipation PCM : 0.83 W （Tamb=25℃） Collector current ICM : 0.1 A Collector-base voltage V BR CBO : BF420 300 V

BF422

Abstract: BF420 bf422 transistor BF422 EQUIVALENT transistor BF422 mx dean 47*275vol
Contextual Info: BF420/BF422 BF420 BF422 TRANSISTOR NPN TO-92 1. EMITTER FEATURES Power dissipation 0.83 W (Tamb=25℃) PCM: Collector current 0.1 A ICM: Collector-base voltage BF420 300 V V(BR)CBO: BF422 250 V 2. COLLECTOR 3. BASE 1 2 3 Operating and storage junction temperature range

marking code J111

Abstract: BC237 2N2904 bc547 marking transistor BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistor Surface Mount MSD602-RT1 Motorola Preferred Device COLLECTOR 3 3 2 2 BASE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage

BC237

Abstract: 2N3019 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistors Surface Mount MSD601-RT1* MSD601-ST1 COLLECTOR 3 2 BASE MAXIMUM RATINGS TA = 25°C 3 1 EMITTER 2 1 Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose Amplifier Transistor Surface Mount MSB709-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO – 60

bf420

Abstract: BF422 083w
Contextual Info: ICC TO-92 Plastic-Encapsulate Transistors B F 420 B F 4 2 2 T R A N S IS T O R N P N F E A T UR E S Power dissipation Pcm: 0.83W (Tamb=25”C ) Collector current Icm : 0.1 A C&Mector-base voltage V(BR )C BO : BF420 : 300V BF422 : 250V Operating and storage junction temperature range

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Low Voltage Output Amplifier Surface Mount MSD1328-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 25 Vdc Collector–Emitter Voltage

BF907

Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5

KT604

Abstract: 2SC627 KT604A BF3920 MPSA430 BF292 LOW-POWER SILICON NPN KT604B 2SC1048 bf355
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 Manufacturer 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 30 30 30 30 30 30 30 30 30 35 4 40 40 40 40 40 40 40 40 40 MMBTA43 MPSA43 5MBTA43 ESM643 2N6430 MPS•A43 BF643

D40V2

Abstract: BF469S kt940a 2SC4030 D40N5 BF881 bf109 BF883S KT940B 140 telefunken
Contextual Info: POWER SILICON NPN Item Number Part Number I C -5 -10 15 25 30 35 40 45 - 50 55 60 65 70 -75 • 80 85 · 90 95 - 868 Ic Max Y(BR)CEO (A) (V) hFE Min Max fT ICBO Max t, Max PD Toper Max Max Max (Hz) (A) (8) (a) (W) (OC) 400 400 1.0 1.0 1.0 1.2 2.0 1.0 2.0 1.0

BF420

Abstract: BF422 BF422 EQUIVALENT TA-2-81213 BF421 BF423 10NA50
Contextual Info: BF420, BF422 Small Signal Transistors NPN TO-92 FEATURES .142 (3.6) .181 (4.6) ♦ NPN Silicon Epitaxial Planar Transistors min. .492 (12.5) .181 (4.6) especially suited for application in class-B video output stages of TV receivers and monitors. ♦ As complementary types, the PNP

Contextual Info: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF420, BF422 Small Signal Transistors (NPN) LQ 2 ^ 181 (4.6 i t_ ID FEATURES - 14 «j' f * NPN Silicon Epitaxial Planar Transistors especially suited for application in class-B

BF422

Abstract: BF420
Contextual Info: BF420, BF422 NPN Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. , <s n— 1 — " | — iI : I As complementary types, the PNP transistors BF421 and BF423 are recommended

BF422

Abstract: bf422 transistor BF422 EQUIVALENT BF420 transistor bf422
Contextual Info: BF420 BF422 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • Capable of 0.83Watts of Power Dissipation. Collector-current 0.1A Collector-base Voltage: BF420 300V BF422 250V Operating and storage junction temperature range: -55OC to +150 OC

BF422

Abstract: bf420 IC 368 BF420 transistor
Contextual Info: MCC Features • • • Capable of 0.83Watts of Power Dissipation. Collector-current 0.1A Collector-base Voltage: BF420 300V BF422 250V Operating and storage junction temperature range: -55OC to +150 OC • BF420 BF422
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