BR 8 TRANSISTOR Search Results

Contextual Info: SD1534-8 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)65 I(C) Max. (A)5.5 Absolute Max. Power Diss. (W)218 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: LTE42012R Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)800 Absolute Max. Power Diss. (W)8¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: SD1540-8 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)65 I(C) Max. (A)22 Absolute Max. Power Diss. (W)875 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: SD1526-8 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)21 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: BFG540/XR Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)120m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)8

Contextual Info: SD1407-8 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)65 V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)270 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BFG540/X Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)120m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)8

Contextual Info: NTE54 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)8 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: B5-8 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30â V(BR)CBO (V) I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: PMBFJ177 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30.0 V(BR)GSS (V)30.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)20.0 V(GS)off Min. (V).8

Contextual Info: 2SC4306R Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)8 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.100 h(FE) Max. Current gain.200

ESM30450V

Abstract: MJ10100 esm40450 svt6062 2S01314 solitron transistors ia5062 PTC6002 sgs-ates transistors j200
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) Po Max (W) hFE Min fT Max (Hz) ICBO Max (A) t, Max (8) tf Max Toper (8) (Oe) Max Package Style NPN Darlington Transistors, (Co nt' d) 5 10 BU922 BU922P BU922P BU922P GE6252

BEC npn

Abstract: SOT-23 EBC PT2221 N54 SOT-23
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • D5G433Ô 000^365 T17 M A L 6 R NPN TRANSISTORS S O T -2 3 /T O -2 3 6 A B 3 2 S /M / ELECTRICAL CHARACTERISTICS at TA = 25°C M a rkin g Type 8 D e v ic e 3 i < ^CBO V BR CFO V (V) (BR)EBO M ax . @ VCB (V) <nA) (V) vCE(sat|

BOX70

Abstract: 71T2 PT7933 B0221 ESM3000 SS2022 b0220 74T2 Solitron
Contextual Info: POWER SILICON NPN Item Number Part Number Manufacturer Ic Max A (V) fT hFE V(BR)CEO Min Max (Hz) ICBO Max (A) t, Max tf Max (8) (8) PD Max (W) Toper Max (Oe) Package Style Additional Transistors, (Co nt' d) 5 10 B0221 B0221 B0221 2N1644 HSE912 ST403 B0795

2SC982

Abstract: TO226AA 92PU45 MPSU45 MPS-U45 2S0114 2S01140 2SC3132 b0477
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ie Max PD Max (V) (A) (W) hFE Min Max fT leBO Max tr Max tf Max TOper Max (Hz) (A) (8) (8) ee) 125M 75M 75M 75M 75M 75M 200M 200M 100M 125M 100n 500n 20u 500n 500n 500n 100n 100n 100n 100n

Contextual Info: TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR NPN TO-220 FEATURES Power dissipation 2 PCM: W (Tamb=25℃) 1. BASE Collector current 8 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR

B0815

Abstract: vp2410
Contextual Info: Temic P-Channel Enhancement-Mode MOS Transistor Product Summary Part Number V BR DSS VP2410L Mín (V) -240 rn s^ n ) Max (Q) (V) Id (A) -0 .8 to -2 .5 -0.18 VGS(th) 10 @ VGS = -4 .5 V Features Benefits

AV13007

Contextual Info: @vic AV13007 TO-220 Plastic-Encapsulate Transistors AV13007 TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 2 W（Tamb=25℃） Collector current ICM: 8 A Collector-base voltage V BR CBO : 700 V Operating and storage junction temperature range

niko-sem

Contextual Info: P-Channel Logic Level Enhancement NIKO-SEM P07P03LV Mode Field Effect Transistor Preliminary SOP-8 D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30 37mΩ -7A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

2SB1100K

Abstract: 2SB638H 2SB1147 2SB1100M 2SB1099 2SB711 PMD13K100 2SB1099L
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (A) (V) PD hFE Max ON) Min Max tT 'CBO tr Max Max (HZ) (A) (8) r (CE)sat 'Oper Max (Ohms) Max (°C) Package Style Darlington Transistors, PNP (Cont'd) . . . .5 -10 . . .15 . . . .

P07D03LV

Abstract: NIKO-SEM
Contextual Info: P07D03LV Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 20mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS

P07D03LVG

Abstract: Niko Semiconductor nikos niko-sem
Contextual Info: P07D03LVG Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 20mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

2N6659

Contextual Info: 2N6659 N-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d V BR DSS "S "1 (V) 35 1 .8 BO TTO M VIEW TO -39 (TO-2Q5AD) PRODUCT SUMMARY •d (A) 0 .1 8 2 GATE 3 & CASE-DRAIN Performance Curves: VNDQ06 I»— u ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

transistor d 1710

Abstract: 3DD13007
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 2 W（Tamb=25℃） Collector current ICM: 8 A Collector-base voltage V BR CBO : 700 V Operating and storage junction temperature range