BR 8 TRANSISTOR Search Results

Contextual Info: LTE42012R Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)800 Absolute Max. Power Diss. (W)8¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: BFG540/X Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)120m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)8

Contextual Info: PMBFJ177 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30.0 V(BR)GSS (V)30.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)20.0 V(GS)off Min. (V).8

Contextual Info: 2SC4306R Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)8 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.100 h(FE) Max. Current gain.200

ESM30450V

Abstract: MJ10100 esm40450 svt6062 2S01314 solitron transistors ia5062 PTC6002 sgs-ates transistors j200
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) Po Max (W) hFE Min fT Max (Hz) ICBO Max (A) t, Max (8) tf Max Toper (8) (Oe) Max Package Style NPN Darlington Transistors, (Co nt' d) 5 10 BU922 BU922P BU922P BU922P GE6252

BEC npn

Abstract: SOT-23 EBC PT2221 N54 SOT-23
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • D5G433Ô 000^365 T17 M A L 6 R NPN TRANSISTORS S O T -2 3 /T O -2 3 6 A B 3 2 S /M / ELECTRICAL CHARACTERISTICS at TA = 25°C M a rkin g Type 8 D e v ic e 3 i < ^CBO V BR CFO V (V) (BR)EBO M ax . @ VCB (V) <nA) (V) vCE(sat|

B0815

Abstract: vp2410
Contextual Info: Temic P-Channel Enhancement-Mode MOS Transistor Product Summary Part Number V BR DSS VP2410L Mín (V) -240 rn s^ n ) Max (Q) (V) Id (A) -0 .8 to -2 .5 -0.18 VGS(th) 10 @ VGS = -4 .5 V Features Benefits

AV13007

Contextual Info: @vic AV13007 TO-220 Plastic-Encapsulate Transistors AV13007 TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 2 W（Tamb=25℃） Collector current ICM: 8 A Collector-base voltage V BR CBO : 700 V Operating and storage junction temperature range

2SB1100K

Abstract: 2SB638H 2SB1147 2SB1100M 2SB1099 2SB711 PMD13K100 2SB1099L
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (A) (V) PD hFE Max ON) Min Max tT 'CBO tr Max Max (HZ) (A) (8) r (CE)sat 'Oper Max (Ohms) Max (°C) Package Style Darlington Transistors, PNP (Cont'd) . . . .5 -10 . . .15 . . . .

P07D03LVG

Abstract: Niko Semiconductor nikos niko-sem
Contextual Info: P07D03LVG Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 20mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

2N6659

Contextual Info: 2N6659 N-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d V BR DSS "S "1 (V) 35 1 .8 BO TTO M VIEW TO -39 (TO-2Q5AD) PRODUCT SUMMARY •d (A) 0 .1 8 2 GATE 3 & CASE-DRAIN Performance Curves: VNDQ06 I»— u ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

transistor d 1710

Abstract: 3DD13007
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 2 W（Tamb=25℃） Collector current ICM: 8 A Collector-base voltage V BR CBO : 700 V Operating and storage junction temperature range

P1303BVG

Abstract: SEM 2004
Contextual Info: P1303BVG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 12.5mΩ 10A SOP-8 Lead Free D G : GATE D : DRAIN S : SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

BD160

Abstract: 2SC3303 2SD1147 to-53 2sb550
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO Max Max toN Max ON) Mln (Hz) (A) (8) PD r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .

sem 2005

Abstract: P06B03LVG niko-sem nikos p06b03 5A65
Contextual Info: Logic Level Enhancement P06B03LVG NIKO-SEM Dual P-Channel Mode Field Effect Transistor SOP-8 Lead Free PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 50mΩ -6A G :GATE D :DRAIN S :SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

2N5483

Abstract: BD173 diode 2U 66 BD171 MJE30 MJE2360T
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE »T ON) Min (Hz) Max k)N Max (A) (8) •cBO r (CE)Mt Max (Ohmt) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . .

KT827B

Abstract: KT935A BDX61 kt827 rcs258 TO3VAR package
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT •CBO Max PD Max toN Max ON) Min (Hz) (A) (8) r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 10 MRF422 MRF422 PT9780

P06P03LVG

Abstract: P06P03 niko-sem
Contextual Info: P-Channel Logic Level Enhancement NIKO-SEM P06P03LVG Mode Field Effect Transistor SOP-8 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -6A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

br d882 p

Abstract: D882 TRANSISTOR TRANSISTOR D882 input D882 P transistor "D882 p" N E C D882 transistor D882 K D882 Y BR D882 S D882 q
Contextual Info: TO-126 Plastic-Encapsulate Transistors^ D 8 8 2 T R A N S IS T O R N P N FEATURES Power dissipation TO-126 1.25W (Tamb=25°C) Pcm : C o llecto r current 1.EMITTER Icm: ¿.COLLECTOR 3 A C ollector-base voltage 3 .BASE V(BR)CBO; 40 V O perating and storage ju n ctio n tem perature range

P2003evg

Abstract: P2003EV P2003 p-Channel Logic Level Enhancement Mode Field Effect Transistor SOP 3.9 niko-sem Transistor 9A
Contextual Info: P-Channel Logic Level Enhancement NIKO-SEM P2003EVG Mode Field Effect Transistor SOP-8 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 20mΩ -9A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

BD561

Abstract: BD585 PT9788A 8D434 BDX24 2SD810 BD186 motorola MJE2480 BD163 BD272
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO t0N T(CE)Mt Max PD Max Max ON) Min (Hz) (A) (8) Max (Ohms) Toper Max CO Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 MRF222 MRF223

2u 62 diode

Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20

P5506

Abstract: P5506BVG
Contextual Info: P5506BVG N-Channel Logic Level Enhancement NIKO-SEM SOP-8 Lead-Free Mode Field Effect Transistor D PRODUCT SUMMARY V BR DSS RDS(ON) ID 60 55mΩ 5.5A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

11105 IC

Contextual Info: Tem ic VP2410L S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) IDS«,) Max (Q) V GS<lh) (V) I d (A) -2 4 0 10 @ V o s = - 4 .5 V -0 .8 t o -2 .5 -0 .1 8 Features Benefits Applications • • •