BR 40100 Search Results

P1017

Abstract: TLP1017 P1016 TLP1016
Contextual Info: TOSHIBA TLP1016JLP1017 TOSHIBA PHOTOINTERRUPTER INFRARED LED + PHOTO IC TLP1016 , TLP1017 HOME ELECTRIC EQUIPMENT SUCH AS VCR, CD PLAYER Unit in mm OA EQUIPMENT SUCH AS COPYING MACHINE, PRINTER, FACSIMILE, ETC. Br IsJ AUTOMATIC SERVICE EQUIPMENT SUCH AS VENDING MACHINE, TICKETING MACHINE, ETC.

LA 78141

Abstract: la 78141 equivalent glass frit electronics TTL LA 78141 data sheet la 78141 TIBPAL22V10 TIBPAL22VP10 TIBPAL22VP10-20C TIBPAL22VP10-25M D2943
Contextual Info: TIBPAL22VP10-20C, TIBPAL22VP10-25M HIGH-PERFORMANCE IMPACT-X  PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPS013 – D2943, FEBRUARY 1987 – REVISED JUNE 1991 • • • • • • • • CLK/I I I I I I I I I I I GND Choice of Operating Speeds: TIBPAL22VP10-20C . . . 20 ns Max

BD139 transistor

Abstract: BD139 power transistor bd139 TRANSISTOR NPN BD139 of bd139 BD135 power transistor bd137 bd137 Transistor transistor bd137 BD135 NPN transistor
Contextual Info: Transys Electronics L I M I T E D TO-126 Plastic-Encapsulated Transistors BD135/BD137/BD139 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current 1.5 A ICM: Operating and storage junction temperature range

power transistor bd139

Abstract: BD139 transistor power transistor bd135 TRANSISTOR BD139 BD135 TRANSISTOR NPN BD139 power transistor bd137 transistor bd137 BD139 BD137
Contextual Info: BD135/137/139 BD135/BD137/BD139 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current ICM: 1.5 A Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃

Contextual Info: Transys Electronics L I M I T E D TO-126 Plastic-Encapsulated Transistors BD136/BD138/BD140 TRANSISTOR PNP TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current -1.5 A ICM: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136/BD138/BD140 TRANSISTOR PNP TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A Operating and storage junction temperature range

BD139 transistor

Abstract: BD139 power transistor bd139 BD135 BD135 NPN transistor power transistor bd135 bd137 Transistor power transistor bd137 of bd139 TRANSISTOR BD139
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/BD137/BD139 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current 1.5 A ICM: Operating and storage junction temperature range

BD136

Abstract: BD140 transistor BD140 BD140 Transistor BD138 transistors bd136 BD140 01 BD140 pnp transistor bd140 equivalent datasheet of transistor BD140
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136/BD138/BD140 TRANSISTOR PNP TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current -1.5 A ICM: Operating and storage junction temperature range

BD136

Abstract: BD140 Transistor BD140 transistor BD140 BD138 bd140 equivalent transistor bd136 hfe transistor BD138 bd138 hfe bd140 equivalent
Contextual Info: BD136/138/140 BD136/BD138/BD140 TRANSISTOR PNP TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/BD137/BD139 TRANSISTOR（NPN） TO-126 FEATURES •High Current 1.5A 1. EMITTER ·Low Voltage(80V) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136/BD138/BD140 TO-126 TRANSISTOR PNP FEATURES •High Current(-1.5A) 1. EMITTER 2. COLLECTOR ·Low Voltage(-80V) 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136/BD138/BD140 TO-126 TRANSISTOR PNP FEATURES •High Current(-1.5A) 1. EMITTER 2. COLLECTOR ·Low Voltage(-80V) 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/BD137/BD139 TRANSISTOR NPN TO-126 FEATURES •High Current(1.5A) 1. EMITTER ·Low Voltage(80V) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted )

BD140 pnp transistor

Abstract: bd140 BD136 BD139 BD140 01 of ic BD140 bd136 hfe bd138 hfe of transistor BD140 power transistor bd136
Contextual Info: BD136/BD138/BD140 PNP TO-126 Transistor TO-126 2.500 1.100 2.900 1.500 7.400 7.800 1. EMITTER 3.900 4.100 3.000 3.200 10.60 0 11.00 0 2. COLLECTOR 0.000 0.300 2.100 2.300 3. BASE 3 2 1.170 1.370 1 Features — High Current(-1.5A) — Low Voltage(-80V) 15.30 0

TFK um 175

Abstract: TFK Taiwan Semiconductor TFK 175 hal 506
Contextual Info: E TAIWAN SEMICONDUCTOR MBR4035PT - MBR40100PT 40.0 AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS CO M PLIANCE 'VUT.^! «&<•*'■I Features -> M a la l silico n io d ifio r. m a jo rity c a rrie r conduction T 3 . . w:'i !"• ❖ ■ > -v- Low power loss, high efficiency

BD135

Abstract: BD139 ic 139 BD-135 BD137 TO126
Contextual Info: BD135/137/139 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead Pb -Free 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol BD135 BD137 BD139 Unit Collector-Emitter Voltage VCBO 45 60 80 V Collector-Base Voltage VCEO 45 60

D45 TRANSISTOR

Abstract: power bjt advantages and disadvantages transistor 412 BUV98 compatible buv48 equivalent an363 ST Power bipolar transistors Selection guide MTBF IGBT module power transistor IGBT Designers Manual
Contextual Info: APPLICATION NOTE POWER TRANSISTORS - DEVICES AND DATASHEETS by V. Sukumar ABSTRACT The purpose of this paper is to give a general overview of how to read a transistor specification. We will discuss bipolar transistors, power MOSFETs and IGBTs, and introduce some intelligent power

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

BD135

Abstract: BD139 BD-135 power transistor bd135 BD136 BD137 BD138 BD140 bd139 Complement
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/137/139 TRANSISTOR NPN TO – 126 FEATURES z High Current z Complement To BD136, BD138 And BD140 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

BD136

Abstract: power transistor bd136 BD138 BD139 BD140 of transistor BD140 bd139 140 transistor BD138 of ic BD140 bd138 hfe
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136/138/140 TRANSISTOR PNP TO – 126 FEATURES z High Current z Complement To BD135, BD137 And BD139 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

TRACTION MOTOR GE 763

Contextual Info: Series ITS MIL-DTL-5015 Type Reverse Bayonet Connectors Over 200 Power and Signal Insert Arrangements PLUS: Connector Accessories and Assembly Tools United States  United Kingdom  Germany  France  Nordic  Italy  Spain  Japan SERIES ITS

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

Contextual Info: CARDINAL COMPONENTS Field Programmable Blank Oscillator • Programmed with the PG-2000P, PG-3000 field oscillator programming instrument Series CPPFX within seconds • Can be programmed twice • Provides a sealed finished custom oscillator • Standard Package Options

BTA08-600C equivalent

Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Contextual Info: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B