BR 25 Search Results

BR-B5131K-05V

Abstract: BR-B2131K-12V BR-B3131K-15V BR-B4131K-15V BR-B4531K-05V BR-B4534-05V BR-B5134-05V BR-B6131K-05V BR-B6134-05V BR-BX1131K-12V
Contextual Info: SINCE 1981 Chip Package Part No. BR-B5131K-05V BR-B4531K-05V T-1 BR-B6131K-05V Profile 1.0" Lead BR-B2131K-12V BR-BX1131K-12V 3 BR-B3131K-15V BR-B4131K-15V BR-B5134-05V BR-B4534-05V T-13/4 BR-B6134-05V Standard 1.0" Lead BR-B2134-12V BR-BX1134-12V 5 BR-B4534-15V

CT-3505

Abstract: MB 610 BR v 610 br 81d BR-256 BR-305 BR-31 BR-605 BR-61 BR-805D
Contextual Info: BRIDGE RECTIFIERS ^''''•^CURRENT 1.5 VRRM 3.0 4.0 6.0 8.0 50 RB-151 BR-805D BR-305 RS-401 BR-605 MB-805 100 RB-152 BR-81D BR-31 RS-402 BR-61 MB-81 200 RB-153 BR-82D BR-32 RS-403 BR-62 MB-82 400 RB-154 BR-84D BR-34 RS-404 BR-64 MB-84 600 RB-155 BR-86D BR-36

RB153

Abstract: mb104
Contextual Info: BRIDGE RECTIFIERS '^-~-_CURRENT 1.5 VRRM '0''"'"— 2.0 3.0 4.0 6.0 8.0 50 RB-151 BR-805D BR-305 RS-401 BR-605 MB-805 100 RB-152 BR-81D BR-31 RS-402 BR-61 MB-81 200 RB-153 BR-82D BR-32 RS-403 BR-62 MB-82 400 RB-154 BR-84D BR-34 RS-404 BR-64 MB-84 600 RB-155

D-30A

Abstract: D40A
Contextual Info: ELECTRICAL CHARACTERISTICS Tc = 25°C Peak Pulse Current for 10µS 120 PPS I(BR)1, and I(BR)2 TA<40°C ITRM µA Breakover Voltage Breakover Voltage Symmetry Dynamic Breakback Voltage V(BR)1, and V(BR)2 Volts [V(BR)1] - [V (BR)2] [ ∆V±] VOLT Max. VOLT Min.

PC21002

Contextual Info: Data Sheet, Rev. 1.4, Jun. 2005 HYS72D64301[G/H]BR–[5/6]–B H YS72D64301[G/H]BR–[5/6]–B HYS72D128xxx[G/H]BR– HYS72D128xxx[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256220[G/H]BR–[5/6/7]–B HYS72D256220[G/H]BR– HYS72D256320[G/H]BR–[5/6/7]–B [5/6/7]–B

HYS72D128300

Abstract: DDR400 PC3200R-30331-C0 pc2100r 25330 z
Contextual Info: Data Sheet, Rev. 1.2, Dec. 2004 HYS72D128300[G/H]BR–[5/6/7]–B H YS72D128300[G/H]BR– [5/6/7]–B HYS72D128321[G/H]BR–[5/6/7]–B HYS72D128321[G/H]BR– HYS72D256220[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256320GBR–[6/7]–B HYS72D256220[G/H]BR–

PC3200R-30331-C0

Contextual Info: Data Sheet, Rev. 1.1, Sep. 2004 HYS72D128300[G/H]BR–[5/6/7]–B H YS72D128300[G/H]BR– [5/6/7]–B HYS72D128321[G/H]BR–[5/6/7]–B HYS72D128321[G/H]BR– HYS72D256220[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256320GBR–[6/7]–B HYS72D256220[G/H]BR–

2N6724

Abstract: 2N6725 MPS8724
Contextual Info: 2N6724/MPS6724/2N6725/MPS6725 National Semiconductor 2N6724 2N6725 MPS6724 MPS6725 NPN Darlington Transistor Electrical Characteristics t a = 25°C unless otherwise noted Parameter Symbol Min Max Units OFF CHARACTERISTICS V BR CES v (BR)CBO V(BR)EBO 'CBO 'e bo

DIAC 502

Abstract: 502 diac
Contextual Info: DIAC CHIPS BREAKOVER VOLTAGE TYPE BREAKOVER VOLTAGE BREAKOVER CURRENTS SYMMETRY V BR i and V(BR)¡ l(BR), and l(BR)2 [V(BR),] - V(BR)2] VO LTS ß AM P VO LTS CHIP SIZE MIN TYP MAX MAX M AX 30 50= 28 32 36 100 3 40 50* 35 40 45 100 4 60 50! 56 60 70 100 5 SIDAC CHIPS

b1000c

Abstract: 1000C FZT956
Contextual Info: ELECTRICAL CHARACTERISTICS at Tamb 25°C unless otherwise ❑ SYMBOL MIN. TYP. ‘( BR Ci30 -220 Collector-Emitter Breakdown Voltage V(eR)~,-R Collector-Emitter Breakdown Voltage —— . .-— v(BR)~, o Emitter-Base Voltage V(BR}EEIO PARAMETER Collector-Base

ZTX1151

Contextual Info: ZTX1151A ELECTRICAL CHARACTERISTICS at Tamb= 25°C unless otherwise stated . VALUE SYMBOL CONDITIONS. TYP. MAX. v (BR)CBO -45 -95 V Ic-IOOpA Collector-Emitter Breakdown Voltage V(BR)CES -40 -90 V lc-100|iA Collector-Emitter Breakdown Voltage V(BR)CEO -40

040-H

Abstract: npn, transistor, sc 107 b
Contextual Info: MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30 Vdc Collector–Emitter Voltage V(BR)CEO 20 Vdc Emitter–Base Voltage V(BR)EBO 5.0 Vdc IC

sc 107 transistor

Abstract: NPN TRANSISTOR SC-70 23marking
Contextual Info: MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30 Vdc Collector–Emitter Voltage V(BR)CEO 20 Vdc Emitter–Base Voltage V(BR)EBO 5.0 Vdc IC

BCW67CR

Abstract: BCW67AR BCW68GR BCW67 BCW68HR BCW65 BCW66 BCW67A BCW67B BCW67C
Contextual Info: BCW67 BCW68 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW67 BCW68 V(BR)CEO -32 -45 BCW67 BCW68 V(BR)CES -45 -60 Emitter-Base Breakdown Voltage V(BR)EBO -5 Collector-Emitter Cut-off Current

Contextual Info: SPLICING GUIDE FOR MIRROR-IMAGE CABLE MIRROR-IMAGE LAY-UP 25 V/S 24 V/BR 23 V/G 22 V/O 12 BK/O 13 BK/G 4 W/BR 3 W/G 10 R/S 9 R/BR 20 Y/S 15 BK/S 5 W/S 1 W/BL 11 BK/BL 21 V/BL 14 BK/BR 2 W/O 6 R/BL 16 Y/BL 7 R/O 17 Y/O 8 R/G 18 Y/G 19 Y/BR 25 PAIR UNIT U-25

btp 128 550

Abstract: AXP 209 TPSMP6.8A
Contextual Info: TPSMP6.8 thru TPSMP43A Vishay General Semiconductor New Product High Power Density Surface Mount Automotive Transient Voltage Suppressors DO-220AA SMP MAJOR RATINGS AND CHARACTERISTICS V(BR) 6.8 V to 43 V PPPM (for V(BR) 6.8 V) 250 W PPPM (for V(BR) 7.5 V - 12 V)

Contextual Info: Series ITS ITS 3100 A BR and ITS 4100 A (BR) ITS 3100 R (BR) and ITS 4100 R (BR) ITS ITS ITS Reverse Reverse Bayonet Bayonet Reverse Bayonet Assemblies Assemblies Assemblies Front Panel Mount Square Flange Receptacle Assembly with Backshell for Termination of UNI4883 Rubber Conduits

npn, transistor, sc 107 b

Abstract: MOTOROLA DATE CODE transistor
Contextual Info: MSC2295-BT1* MSC2295-CT1* CASE 318D-03, STYLE 1 COLLECTOR MAXIMUM RATINGS 3 Ï A = 25 C Rating Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current-Continuous Symbol Value Unit v (BR)CBO 30 Vdc V(BR)CEO 20 Vdc v (BR)EBO

MSC2404-CT1

Abstract: MSC2404CT1 npn, transistor, sc 107 b
Contextual Info: MSC2404-CT1* CASE 318D-03, STYLE 1 m C OLLECTOR MAXIMUM RATINGS TA = 25"C Symbol Value Unit Collector-Base Voltage Rating V(BR)CBO 30 Vdc Collector-Emitter Voltage V(BR)CEO 20 Vdc Emitter-Base Voltage V(BR)EBO 3 Vdc 'c 15 mAdc Collector Current-Continuous

ITS4100

Abstract: Commital CONTACT UNI4883 31045 20-27P TS3100
Contextual Info: Series ITS ITS 3100 A BR and ITS 4100 A (BR) ITS 3100 R (BR) and ITS 4100 R (BR) ITS ITS ITS Reverse Reverse Bayonet Bayonet Reverse Bayonet Assemblies Assemblies Assemblies Front Panel Mount Square Flange Receptacle Assembly with Backshell for Termination of UNI4883 Rubber Conduits

BYV42-200

Abstract: BYV72E-200 BY359-1500 PBYR1540CT PBYR1535CT PBYR10-25 BY359X-1500 BYV42-150 BYV29F500 BYV72F-200
Contextual Info: Philips Semiconductors Index Power Diodes Type Number BR211-140 BR211-160 BR 211-180 BR 211-200 BR211-220 BR211-240 BR 211-260 BR 211-280 Page 30 BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280 35 BY229-200 BY229-400

TS3100

Abstract: Commital CONTACT ITS4100 UNI4883
Contextual Info: Series ITS ITS 3101 A BR and ITS 4101 A (BR) ITS 3101 R (BR) and ITS 4101 R (BR) S 3100 (ZLF) (ZLF) TS 3100AA(NO) (PG)and andITS ITS4100 4100AA(NO) (PG) nel3100 Mount Square Flange Receptacle Assembly Panel Mount Square Flange Receptacle S A (NO) and ITS

IEC 60603-7-51

Contextual Info: 24 Tol. <500 ≥500 10 20 >1500 25 >5000 40 >8000 60 >15000 100 200 Paar 2 pair 2 W-O 1 O 2 3 3 Paar 1 pair 1 4 W-BL 5 G 6 W-BR 7 4 Paar 4 pair 4 BL BR 5 6 7 S >50000 >100000 300 500 Paar 3 pair 3 G W-O W-BR Paar 4 pair 4 BR Paar 2 pair 2 O BL Paar 1 pair 1

IC data book free download

Contextual Info: TRANSISTOR NPN Power dissipation PCM: 0.2 Collector current W (Tamb=25 ) 1. BASE ICM: 0.1 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ,Tstg: -55 2. EMITTER 3. COLLECTOR to +150 V(BR)CBO Ic=50µA,IE=0 50 V V(BR)CEO